2007-06-11
1
BAT64...
Silicon Schottky Diodes
For low-loss, fast-recovery, meter protection,
bias isolation and clamping application
Integrated diffused guard ring
Low forward voltage
Pb-free (RoHS compliant) package1)
Qualified according AEC Q101
BAT64 BAT64-04
BAT64-04W
BAT64-05
BAT64-05W
BAT64-06
BAT64-06W
BAT64-02W
!
!
,
,
!
,
,
!
,
,
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Package Configuration LS(nH) Marking
BAT64
BAT64-02W
BAT64-04
BAT64-04W
BAT64-05
BAT64-05W
BAT64-06
BAT64-06W
SOT23
SCD80
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
single
single
series
series
common cathode
common cathode
common anode
common anode
1.8
0.6
1.8
1.4
1.8
1.4
1.8
1.4
63s
64
64s
64s
65s
65s
66s
66s
1Pb-containing package may be available upon special request
2007-06-11
2
BAT64...
Maximum Ratings at T
A
= 25°C, unless otherwise specified
Parameter Symbol Value Unit
Diode reverse voltage VR40 V
Forward current IF250 mA
Non-repetitive peak surge forward current
(t 10ms)
IFSM 800
Average rectified forward current (50/60Hz, sinus) IFAV 120
Total power dissipation
BAT64, TS 86°C
BAT64-02W, TS 121°C
BAT64-04, BAT64-06, TS 61°C
BAT64-04W, BAT64-06W, TS 111°C
BAT64-05, TS 36°C
BAT64-05W, TS 104°C
Ptot
250
250
250
250
250
250
mW
Junction temperature T
j
150 °C
Storage temperature Tst
g
-55 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point1)
BAT64
BAT64-02W
BAT64-04, BAT64-06,
BAT64-04W, BAT64-06W
BAT64-05
BAT64-05W
RthJS
255
115
355
155
455
185
K/W
1For calculation of RthJA please refer to Application Note Thermal Resistance
2007-06-11
3
BAT64...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Breakdown voltage
I(BR) = 10 µA
V(BR) 40 - - V
Reverse current
VR = 30 V
VR = 30 V, TA = 85 °C
IR
-
-
-
-
2
200
µA
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 30 mA
IF = 100 mA
VF
270
310
370
500
320
385
440
570
350
430
520
750
mV
AC Characteristics
Diode capacitance
VR = 1 V, f = 1 MHz
CT- 4 6 pF
Reverse recovery time
IF = 10 mA, IR = 10 mA, measured IR = 1 mA ,
RL = 100
trr - - 5 ns
2007-06-11
4
BAT64...
Diode capacitance CT = ƒ (VR)
f = 1MHz
0
0
EHB00059BAT 64...
C
V
R
T
10 20 V 30
1
2
3
4
5
6
7
8
pF
10
Reverse current IR = ƒ(VR)
TA = Parameter
10
10
10
0102030
BAT 64... EHB00058
V
R
Ι
R
V
10
µA
10
10
A
T= 125
85
25
2
1
0
-1
-2
-3
C
C
C
Forward current IF = ƒ (VF)
TA = Parameter
10
10
10
0 0.5 1
BAT 64... EHB00057
V
F
Ι
F
V
10
10
2
1
0
-1
-2
mA
A
T= -40
25
85
125
C
C
C
C
Forward current IF = ƒ (TS)
BAT64W
0 15 30 45 60 75 90 105 120 °C 150
TS
0
50
100
150
200
mA
300
IF
2007-06-11
5
BAT64...
Forward current IF = ƒ (TS)
BAT64-02W
0 15 30 45 60 75 90 105 120 °C 150
TS
0
50
100
150
200
mA
300
IF
Forward current IF = ƒ (TS)
BAT64-04, BAT64-06
0 15 30 45 60 75 90 105 120 °C 150
TS
0
50
100
150
200
mA
300
IF
Forward current IF = ƒ (TS)
BAT64-04W, BAT64-06W
0 15 30 45 60 75 90 105 120 °C 150
TS
0
50
100
150
200
mA
300
IF
Forward current IF = ƒ (TS)
BAT64-05
0 15 30 45 60 75 90 105 120 °C 150
TS
0
50
100
150
200
mA
300
IF
2007-06-11
6
BAT64...
Forward current IF = ƒ (TS)
BAT64-05W
0 15 30 45 60 75 90 105 120 °C 150
TS
0
50
100
150
200
mA
300
IF
Permissible Pulse Load
IFmax/ IFDC = ƒ (tp)
BAT64-02W
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tP
0
10
1
10
2
10
IFmax/IFDC
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Puls Load RthJS = ƒ (tp)
BAT64-02W
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tP
-1
10
0
10
1
10
2
10
3
10
K/W
RthJS
D=0.5
0.2
0.1
0.05
0.02
0.01
0.005
0
Permissible Puls Load RthJS = ƒ (tp)
BAT64-04W, BAT64-06W
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tP
-1
10
0
10
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
2007-06-11
7
BAT64...
Permissible Pulse Load
IFmax/ IFDC = ƒ (tp)
BAT64-04W, BAT64-06W
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tP
0
10
1
10
2
10
-
IFmax/IFDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Permissible Puls Load RthJS = ƒ (tp)
BAT64-05W
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tP
-1
10
0
10
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
IFmax/ IFDC = ƒ (tp)
BAT64-05W
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
-
IFmax/IFDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
2007-06-11
8
BAT64...
Package SCD80
Package Outline
Foot Print
Marking Layout (Example)
±0.1
1.7
0.3
1
2
marking
Cathode
0.8
±0.1
10
˚
MAX.
±0.1
0.7
±0.1
1.3 7
˚
0.13
±0.05
+0.05
-0.03
±1.5
˚
0.2
M
A
A
±0.05
0.2
0.35
0.35
1.45
BAR63-02W
Type code
Cathode marking
Laser marking
0.7
20.2
0.9
0.4
8
4
1.45
2.5
Standard Reel with 2 mm Pitch
Cathode
marking
Cathode
marking
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø180 mm = 8.000 Pieces/Reel (2 mm Pitch)
Reel ø330 mm = 10.000 Pieces/Reel
2005, June
Date code
2007-06-11
9
BAT64...
Date Code marking for discrete packages with
one digit (SCD80, SC79, SC75
1)
) CES-Code
1) New Marking Layout for SC75, implemented at October 2005.
.
Month 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014
01apAPapAPapAP
02bqBQbqBQbqBQ
03crCRcrCRcrCR
04dsDSdsDSdsDS
05et ETet ETet ET
06fuFUfuFUfuFU
07gvGVgvGVgvGV
08hxHXhxHXhxHX
09jyJYjyJYjyJY
10kzKZkzKZkzKZ
11l 2L4l 2L4l 2L4
12n3N5n3N5n3N5
2007-06-11
10
BAT64...
Package SOT23
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
EH
s
BCW66
Type code
Pin 1
0.8
0.9 0.91.3
0.8 1.2
0.25 MBC
1.9
-0.05
+0.1
0.4
±0.1
2.9
0.95
C
B
0...8˚
0.2 A
0.1 MAX.
10˚ MAX.
0.08...0.15
1.3
±0.1
10˚ MAX.
M
2.4
±0.15
±0.1
1
A
0.15 MIN.
1)
1) Lead width can be 0.6 max. in dambar area
12
3
3.15
4
2.65
2.13
0.9
8
0.2
1.15
Pin 1
Manufacturer
2005, June
Date code (YM)
2007-06-11
11
BAT64...
Package SOT323
Package Outline
Foot Print
Marking Layout (Example)
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
1.25
±0.1
0.1 MAX.
2.1
±0.1
0.15
+0.1
-0.05
0.3
+0.1
±0.1
0.9
12
3A
±0.2
2
-0.05
0.650.65
M
3x 0.1
0.1 MIN.
0.1
M
0.2 A
0.2
4
2.15 1.1
8
2.3
Pin 1
Pin 1
2005, June
Date code (YM)
BCR108W
Type code
0.6
0.8
1.6
0.65 0.65
Manufacturer
2007-06-11
12
BAT64...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.