MMBF170Q
Document number: DS37720 Rev. 1 - 2
1 of 5
www.diodes.com January 2015
© Diodes Incorporated
MMBF170Q
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• PPAP Capable (Note 4)
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish Annealed over Alloy 42 Leadframe
(Lead Free Plating).
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.008 grams (Approximate)
Ordering Information
(Note 5)
Part Number Case Packaging
MMBF170Q-7-F SOT23 3,000/Tape & Reel
MMBF170Q-13-F SOT23 10,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT23
Date Code Key
Year 1998 1999 2000 2001 2002 … 2014 2015 2016 2015 2016 2017 2018 2019 2020
Code J K L M N … B C D C D E F G H
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
SOT23
Top View Equivalent Circuit To
p
View
D
GS
K6Z = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2014)
M = Month (ex: 9 = September)
D
S
G
MMBF170Q
Document number: DS37720 Rev. 1 - 2
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MMBF170Q
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Drain-Source Voltage VDSS 60 V
Drain-Gate Voltage RGS ≤ 1.0MΩ V
DGR 60 V
Gate-Source Voltage Continuous
Pulsed VGSS ±20
±40 V
Drain Current (Note 6) Continuous
Pulsed ID 500
800 mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Units
Total Power Dissipation (Note 6) PD 300
1.80
mW
mW/°C
Thermal Resistance, Junction to Ambient RθJA 417 K/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BVDSS 60 70 ⎯ V VGS = 0V, ID = 100μA
Zero Gate Voltage Drain Current IDSS ⎯ ⎯ 1.0 µA
VDS = 60V, VGS = 0V
Gate-Body Leakage IGSS ⎯ ⎯ ±10 nA VGS = ±15V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage VGS(th) 0.8 2.1 3.0 V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance RDS (ON) ⎯
⎯
⎯
⎯
5.0
5.3 Ω VGS = 10V, ID = 200mA
VGS = 4.5V, ID = 50mA
Forward Transconductance gFS 80 ⎯ ⎯ mS VDS =10V, ID = 0.2A
DYNAMIC CHARACTERISTICS
Input Capacitance Ciss ⎯ 22 40 pF
VDS = 10V, VGS = 0V, f = 1.0MHz
Output Capacitance Coss ⎯ 11 30 pF
Reverse Transfer Capacitance Crss ⎯ 2.0 5.0 pF
SWITCHING CHARACTERISTICS
Turn-On Time ton ⎯ ⎯ 10 ns
VDD = 25V, ID = 0.5A,
VGS = 10V, RGEN = 50Ω
Turn-Off Time toff ⎯ ⎯ 10 ns
Notes: 6. Device mounted on FR-4 PCB 1.0 x 0.75 x 0.062 inch pad layout as shown on Diodes, Inc. suggested pad layout AP02001, which can be found on our
website at http://www.diodes.com.
7. Short duration pulse test used to minimize self-heating effect.
MMBF170Q
Document number: DS37720 Rev. 1 - 2
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© Diodes Incorporated
MMBF170Q
0
0.2
0.4
0.6
0.8
1.0
012345
V , DRAIN-SOURCE VOLTAGE (V)
Fig. 1 On-Region Characteristics
DS
I , DRAIN-SOURCE CURRENT (A)
D
0
1
2
3
4
5
00.2
R
,
N
O
R
MALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
I , DRAIN CURRENT (A)
Fig. 2 On-Resistance vs. Drain Current
D
6
7
0.4 0.6 0.8 1.0
0
0.5
1.0
1.5
2.0
-55 -30 -5 20 45 70 95 120 145
R
,
N
O
R
MALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
T , JUNCTION TEMPERATURE ( C)
Fig. 3 On-Resistance vs. Junction Temperature
j
°
0
V , GATE TO SOURCE VOLTAGE (V)
Fig. 4 On-Resistance vs. Gate-Source Voltage
GS
1
2
3
4
5
6
0 2 4 6 8 1012141618
R , NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
DS(ON)
0
50
100
25 50 75 100 125 150 175 200
P
,
P
O
WE
R
DISSI
P
A
T
I
O
N (mW)
D
T , AMBIENT TEMPERATURE (°C)
Fig. 5 Max Power Dissipation vs. Ambient Temperature
A
150
200
250
300
350
0
400
MMBF170Q
Document number: DS37720 Rev. 1 - 2
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MMBF170Q
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT23
J
K1K
L1
GAUGE PLANE
0.25
H
L
M
All 7°
A
CB
D
G
F
a
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.890 1.00 0.975
K1 0.903 1.10 1.025
L 0.45 0.61 0.55
L1 0.25 0.55 0.40
M 0.085 0.150 0.110
a
8°
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
XE
Y
C
Z
MMBF170Q
Document number: DS37720 Rev. 1 - 2
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© Diodes Incorporated
MMBF170Q
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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1. are intended to implant into the body, or
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labeling can be reasonably expected to result in significant injury to the user.
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failure of the life support device or to affect its safety or effectiveness.
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