1. Product profile
1.1 General description
Ultra low capacitance unidirectional ElectroStatic Discharge (ESD) protection diode
designed to protect one signal line fro m the damage cause d by ESD and othe r transient s.
The device is housed in a SOD8 82D leadless ultra small Surface-Mo unted Device (SMD)
plastic package with visible and solderable side pads.
The combination of extremely low capacitance and ultra low clamping volt age makes the
device ideal for high-speed data line protection applications.
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
PESD5V0X1ULD
Ultra low capacitance unidirectional ESD protection diode
Rev. 1 — 15 February 2011 Product data sheet
ESD protection of on e line IEC 61000-4-2; level 4 (ESD)
Ultra low diode capacitance
Cd=0.95pF
Ultra small SMD plastic package
Ultra low clamping voltage: VCL =8V Solderable tin-plated side pads
Ultra low leakage current: IRM =1nA AEC-Q101 qualified
ESD protection up to 8 kV
Computers and peripherals Portable electronics
Audio and video equipment Subscriber Identity Module (SIM) card
protection
Cellular handsets and accessories USB, High-Definition Multimedia
Interface (HDMI), FireWire
10/100/1000 Mbit/s Ethernet High-speed data lines
Communication systems
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VRWM reverse standoff voltage - - 5.5 V
Cddiode capacitance f = 1 MHz; VR= 0 V - 0.95 1.1 pF
PESD5V0X1ULD All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 15 February 2011 2 of 12
NXP Semiconductors PESD5V0X1ULD
Ultra low capacitance unidirectional ESD protection diode
2. Pinning information
[1] The marking bar indicates the cathode.
3. Ordering information
4. Marking
[1] For SOD882D binary marking code description, see Figure 1.
4.1 Binary marking code description
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 cathode [1]
2 anode
Transparent
top view
21
006aaa152
2
1
Tabl e 3. Ordering i nfo rmation
Type number Package
Name Description Version
PESD5V0X1ULD - leadless ultra small plastic package; 2 terminals;
body 1 0.6 0.4 mm SOD882D
Table 4. Marking codes
Type number Marking code[1]
PESD5V0X1ULD 1111 0000
Fig 1. SOD882D binary marking code description
VENDOR CODE
MARKING CODE
(EXAMPLE)
CATHODE BAR READING DIRECTION
READING DIRECTION
READING EXAMPLE:
0111
1011
006aac477
PESD5V0X1ULD All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 15 February 2011 3 of 12
NXP Semiconductors PESD5V0X1ULD
Ultra low capacitance unidirectional ESD protection diode
5. Limiting values
[1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to 2.
[1] Device stressed with ten non-repetitive ESD pulses.
[2] Measured from pin 1 to 2.
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
IPP peak pulse current tp=8/20s[1][2] -1.5A
Tjjunction temperature - 150 C
Tamb ambient temperature 55 +150 C
Tstg storage temperature 65 +150 C
Table 6. ESD maximum ratings
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Max Unit
VESD electrostatic
discharge voltage IEC 61000-4-2
(contact discharge) [1][2] -8kV
machine mo de l - 400 V
MIL-STD-883
(human body model) [2] -10kV
Table 7. ESD standards compliance
Standard Conditions
IEC 61000-4-2; level 4 (ESD) > 15 kV (air); > 8 kV (contact)
MIL-STD-883; class 3 (human body model) > 4 kV
PESD5V0X1ULD All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 15 February 2011 4 of 12
NXP Semiconductors PESD5V0X1ULD
Ultra low capacitance unidirectional ESD protection diode
Fig 2. 8 /20 s pulse waveform according to
IEC 61000-4-5 Fig 3. ESD pulse waveform according to
IEC 61000-4-2
t (μs)
0403010 20
001aaa630
40
80
120
IPP
(%)
0
et
100 % IPP; 8 μs
50 % IPP; 20 μs
001aaa631
I
PP
100 %
90 %
t
30 ns 60 ns
10 %
t
r
= 0.7 ns to 1 ns
PESD5V0X1ULD All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 15 February 2011 5 of 12
NXP Semiconductors PESD5V0X1ULD
Ultra low capacitance unidirectional ESD protection diode
6. Characteristics
[1] Non-repetitive current pulse 8/20 s exponential decay waveform according to IEC 61000-4-5.
[2] Measured from pin 1 to 2.
[3] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp= 100 ns; square pulse;
ANS/IESD STM5-1-2008.
Table 8. Characteristics
Tamb =25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
VRWM reverse standoff
voltage --5.5V
IRM reverse leakage current VRWM = 5 V - 1 100 nA
VBR breakdown voltage IR=10mA 5.8 7.5 10 V
Cddiode capacitance f = 1 MHz; VR= 0 V - 0.95 1.1 pF
VCL clamping voltage IPP =1.5A [1][2] -8-V
rdyn dynamic resistance IR=10A [3] -0.25-
f=1MHz; T
amb =25C
Fig 4. Diode capacitance as a function of reverse
voltage; typical values Fig 5. V-I characteristics for a unidirectional
ESD protection diode
VR (V)
0.0 5.04.02.0 3.01.0
006aac511
1.2
Cd
(pF)
1.0
0.8
0.6
0.5
0.7
0.9
1.1
006aaa407
V
CL
V
BR
V
RWM
I
RM
I
R
I
PP
V
I
P-N
+
PESD5V0X1ULD All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 15 February 2011 6 of 12
NXP Semiconductors PESD5V0X1ULD
Ultra low capacitance unidirectional ESD protection diode
Fig 6. ESD clamping test setup and waveforms
50 Ω
RZ
CZ
DUT
(DEVICE
UNDER
TEST)
GND
GND
450 Ω
RG 223/U
50 Ω coax
ESD TESTER
IEC 61000-4-2 network
CZ = 150 pF; RZ = 330 Ω
4 GHz DIGITAL
OSCILLOSCOPE
10×
ATTENUATOR
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
unclamped 8 kV ESD pulse waveform
(IEC 61000-4-2 network)
vertical scale = 2 kV/div
horizontal scale = 15 ns/div
vertical scale = 2 kV/div
horizontal scale = 15 ns/div
GND
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
006aac512
GND
clamped 8 kV ESD pulse waveform
(IEC 61000-4-2 network)
vertical scale = 10 V/div
horizontal scale = 10 ns/div
vertical scale = 10 V/div
horizontal scale = 10 ns/div
PESD5V0X1ULD All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 15 February 2011 7 of 12
NXP Semiconductors PESD5V0X1ULD
Ultra low capacitance unidirectional ESD protection diode
7. Application information
The PESD5V0X1ULD is designed for the protection of one unidirectional data or signal
line from the damage cause d by ESD and surg e pulses. The device ma y be used on lines
where the signal polarities are either positive or negative with respect to ground.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)
and surge transients. The following guidelines are recommended:
1. Place the PESD5V0X1ULD as close to the input terminal or connector as possible.
2. The path length between the PESD5V0X1ULD and the protected line should be
minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
Fig 7. Application diagram
006aac517
GND
line to be protected
(positive signal polarity)
PESD5V0X1ULD
unidirectional protection of one line
GND
line to be protected
(negative signal polarity)
PESD5V0X1ULD
PESD5V0X1ULD All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 15 February 2011 8 of 12
NXP Semiconductors PESD5V0X1ULD
Ultra low capacitance unidirectional ESD protection diode
9. Package outline
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
11. Soldering
Fig 8. Package outline SOD882D
Table 9. Packing methods
The indicated -xxx are the last thre e digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
10000
PESD5V0X1ULD SOD882D 2 mm pitch, 8 mm tape and reel -315
Reflow soldering is the only recommended soldering method.
Fig 9. Reflow soldering footprint SOD882D
solder lands
solder resist
solder paste
sod882d_fr
Dimensions in mm
1.4
0.2
0.3
0.4
1
1.3
0.8
(2×) 0.6
(2×) 0.7
(2×)
PESD5V0X1ULD All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 15 February 2011 9 of 12
NXP Semiconductors PESD5V0X1ULD
Ultra low capacitance unidirectional ESD protection diode
12. Revision history
Table 10. Revision history
Document ID Release date Data sheet status Change notice Supersedes
PESD5V0X1ULD v.1 20110215 Product data sheet - -
PESD5V0X1ULD All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 15 February 2011 10 of 12
NXP Semiconductors PESD5V0X1ULD
Ultra low capacitance unidirectional ESD protection diode
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
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Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] dat a sheet Production This document contains the product specification.
PESD5V0X1ULD All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 15 February 2011 11 of 12
NXP Semiconductors PESD5V0X1ULD
Ultra low capacitance unidirectional ESD protection diode
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
13.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors PESD5V0X1ULD
Ultra low capacitance unidirectional ESD protection diode
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 15 February 2011
Document identifier: PESD5V0X1ULD
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
4.1 Binary marking code description. . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
7 Application information. . . . . . . . . . . . . . . . . . . 7
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
10 Packing information . . . . . . . . . . . . . . . . . . . . . 8
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
14 Contact information. . . . . . . . . . . . . . . . . . . . . 11
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12