1
SEPTEMBER 2001 - REVISED FEBRUARY 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
TISP3070T3BJ THRU TISP3395T3BJ
DUAL BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS
Description
Dual High Current Protectors in a Space Efficient Package
- 2 x 100 A 10/560 Current Rating
- Modified 3-pin SMB (DO-214AA) Package
50 % Space Saving over Two SMBs
- Y Configurations with Two SMB Packages
2 x 80 A, 10/1000 .................... TISP3xxxT3BJ + TISP4xxxJ1BJ
2 x 100 A, 10/700 ................... TISP3xxxT3BJ + TISP4xxxH3BJ
Ion-Implanted Breakdown Region
- Precise and Stable Voltage
- Low Voltage Overshoot under Surge
These dual bidirectional thyristor devices protect central office, access and customer premise equipment against overvoltages on the telecom
line. The TISP3xxxT3BJ is available in a wide range of voltages and has an 80 A 10/1000 current rating. These protectors have been specified
mindful of the following standards and recommendations: GR-1089-CORE, TIA/EIA-IS-968, UL 60950, EN 60950, IEC 60950, ITU-T K.20, K.21
and K.45. The TISP3350T3BJ meets the FCC Part 68 “B” ringer voltage requirement (VDRM = ±275 V). Housed in a 3-pin modified SMB
(DO-214AA) package, the TISP3xxxT3BJ range is space efficient solution for protection designs of 80 A or less which use multiple SMBs.
These devices allow signal voltages, without clipping, up to the maximum off-state voltage value, VDRM, see Figure 1. Voltages above VDRM are
limited and will not exceed the breakover voltage, V(BO), level. If sufficient current flows due to the overvoltage, the device switches into a low-
voltage on-state condition, which diverts the current from the overvoltage through the device. When the diverted current falls below the
holding current, IH, level the device switches off and restores normal system operation.
How to Order
Device Symbol
SMB Package (Top View)
Rated for International Surge Wave Shapes
Device VDRM
V
V(BO)
V
TISP3070T3 58 70
TISP3080T3 65 80
TISP3095T3 75 95
TISP3115T3 90 115
TISP3125T3 100 125
TISP3145T3 120 145
TISP3165T3 135 165
TISP3180T3 145 180
TISP3200T3 155 200
TISP3219T3 180 219
TISP3250T3 190 250
TISP3290T3 220 290
TISP3350T3 275 350
TISP3395T3 320 395
MDXXCJA
1
32
3
(T or R)
SD3TAA
1
(T or R)
2
(G)
Wave Shape Standard IPPSM
A
2/10 GR-1089-CORE 250
8/20 IEC 61000-4-5 250
10/160 TIA/EIA-IS-968 (FCC Part 68) 150
10/700 ITU-T K.20/.21/.45 120
10/560 TIA/EIA-IS-968 (FCC Part 68) 100
10/1000 GR-1089-CORE 80
Devic e Packag e Carrier Orde r As
TISP3xxxT3BJ BJ (3-pin modified SMB/DO-214AA J-Bend) R (Embossed Tape Reeled) TISP3xxxT3BJR
Insert xxx value corresponding to protectio n voltages of 070, 080, 095, 115, etc.
............................................ UL Recognized Components
2
SEPTEMBER 2001 - REVISED FEBRUARY 2003
Specifications are subject to change without notice.
Customers should verify actual device per for mance in their specific applications.
Rating Symbol Value Unit
Repetitive peak off-state voltage, (terminals 1-2 and 3-2)
’3070
’3080
’3095
’3115
’3125
’3145
’3165
’3180
’3200
’3219
’3250
’3290
’3350
’3395
VDRM
±58
±65
±75
±90
±100
±120
±135
±145
±155
±180
±190
±220
±275
±320
V
Non-repetitive peak on-state pulse current (see Notes 1 and 2)
IPPSM A
2/10 (Telcordia GR-1089-CORE, 2/10 voltage wave shape) 2x250
8/20 (IEC 61000-4-5, combination wave generator, 1.2/50 voltage wave shape) 2x250
10/160 (TIA/EIA-IS-968 (replaces FCC Part 68), 10/160 µs voltage wave shape) 2x150
5/310 (ITU-T K.44, 10/700 µs voltage wave shape used in K.20/.45/.21) 2x120
5/320 (TIA/EIA-IS-968 (replaces FCC P art 68), 9/720 µs voltage wave shape) 2x120
10/560 (TIA/EIA-IS-968 (replaces FCC Part 68), 10/560 µs voltage wave shape) 2x100
10/1000 (Telcordia GR-1089-CORE, 10/1000 voltage wave shape) 2x80
Non-repetitive peak on-state current (see Notes 1 and 2)
ITSM 2x25
2x30
2x1.2
A
50 Hz, 1 cycle
60 Hz, 1 cycle
1000 s 50 Hz/60 Hz a.c.
Initial rate of rise of on-state current, Linear current ramp, Maximum ramp value < 50 A diT/dt 500 A/µs
Junction temperature TJ-40 to +150 °C
Storage temperature range Tstg -65 to +150 °C
NOTES: 1. Initially, the device must be in thermal equilibrium with TJ=25°C.
2. These non-repetitive rated currents are peak values of either polarity. The rated current values are applied to the terminals 1 and
3 simultaneously (in this case the ter minal 2 retur n current will be the su m of the currents applied to the ter minals 1 and 3). The
surge may be repeated after the device returns to its initial conditions.
TISP3xxxT3BJ Overvoltage Protector Series
Recommended Operating Conditions
Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)
Component Min Typ Max Unit
R1, R2
Series resistor for GR-1089-CORE first-level surge survival
Series resistor for ITU-T recommendation K.20/.45/.21 (coordination with 400 V GDT at 4 kV)
Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68) 9/720 survival
Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68) 10/560 survival
Series resistor for TIA/EIA-IS-968 (replaces FCC Part 68) 10/160 survival
5
6.4
0
0
2.5
Ω
3
SEPTEMBER 2001 - REVISED FEBRUARY 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
Electrical Characteristics for the 1 and 2 or the 3 and 2 Terminals, T A = 25 °C
Parameter Test Conditions Min T yp Max Unit
IDRM Repetitive peak off-
state current VD = VDRM TA = 25 °C
TA = 85 °C
±5
±10 µA
V(BO) AC breakover voltage dv/dt = ±250 V/ms, R SOURCE =300Ω
’3070
’3080
’3095
’3115
’3125
’3145
’3165
’3180
’3200
’3219
’3250
’3290
’3350
’3395
±70
±80
±95
±115
±125
±145
±165
±180
±200
±219
±250
±290
±350
±395
V
V(BO) Ramp breakover
voltage
dv/dt ≤±1000 V/µs, Linear voltage ramp,
Maximum ramp value = ±500 V
di/dt = ±20 A/µs, Linear current ramp,
Maximum ramp value = ±10 A
’3070
’3080
’3095
’3115
’3125
’3145
’3165
’3180
’3200
’3219
’3250
’3290
’3350
’3395
±81
±91
±107
±128
±138
±159
±179
±195
±215
±234
±265
±304
±361
±403
V
I(BO) Breakover current dv/dt = ±250 V/ms, R SOURCE =300Ω±800 mA
IHHolding current IT=±5A, di/dt=+/-30mA/ms ±150 mA
dv/dt Critical rate of rise of
off-state voltage Linear voltage ramp, Maximum ramp value < 0.85VDRM ±5kV/µs
IDOff-state current VD=±50 V TA = 85 °C±10 µA
4
SEPTEMBER 2001 - REVISED FEBRUARY 2003
Specifications are subject to change without notice.
Customers should verify actual device per for mance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
Electrical Characteristics for the 1 and 2 or the 3 and 2 Terminals, TA = 25 °C (Continued)
Coff Off-state capacitance
f=1MHz, Vd=1V rms, V
D=0, ‘3070 thru ‘3095
‘3115 thru ‘3219
‘3250 thru ‘3395
95
69
51
90
63
46
83
59
42
43
29
20
16
114
83
62
108
76
55
100
70
51
51
35
24
19
pF
f=1MHz, Vd=1V rms, V
D=-1V ‘3070 thru ‘3095
‘3115 thru ‘3219
‘3250 thru ‘3395
f=1MHz, Vd=1V rms, V
D=-2V ‘3070 thru ‘3095
‘3115 thru ‘3219
‘3250 thru ‘3395
f=1MHz, Vd=1V rms, V
D=-50V ‘3070 thru ‘3095
‘3115 thru ‘3219
‘3250 thru ‘3395
f=1MHz, Vd=1V rms, V
D= -100 V
(see Note 3) ‘3250 thru ‘3395
NOTE 3: These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured
third terminal is connected to the guard terminal of the bridge.
Parameter Test Conditions Min Typ Max Unit
Thermal Characteristics
Parameter T est Conditions Min T yp Max Unit
RθJA Junction to free air thermal resistance EIA/JESD51-3 PCB, IT = ITSM(1000),
TA = 25 °C, (see Note 4) 90 °C/W
NOTE 4: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.
5
SEPTEMBER 2001 - REVISED FEBRUARY 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
Parameter Measurement Information
Figure 1. Voltage-Current Characteristic for Terminal Pairs 1-2 and 3-2
All Measurements are Referenced to Terminal 2
-v VDRM
IDRM
VD
IH
IT
VT
ITSM
IPPSM
V(BO)
ID
Quadrant I
I
Switching
Characteristic
Quadrant III
Switching
Characteristic
+v
+i
V(BO)
VD
ID
IH
IT
VT
ITSM
IPPSM
-i PM4XAE
VDRM
IDRM
6
SEPTEMBER 2001 - REVISED FEBRUARY 2003
Specifications are subject to change without notice.
Customers should verify actual device per for mance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
Typical Characteristics
Figure 2. Figure 3.
Figure 4. Figure 5.
OFF-STATE CURRE NT
vs
JUNCTION TEMPERA TURE
TJ - Junction Temperature - °C
Junction T emperature - °C
Junction T emperature - °C
-25 0 25 50 75 100 125 150
|ID| - Off-State Current - µA
0·001
0·01
0·1
1
10 TC4AH3AA
VD = ±50 V
NORMALIZED BREAKOVER VOLTAGE
vs
JUNCTION TEMPE RATURE
TJ -
-25 0 25 50 75 100 125 150
Normalized Breakover Voltage
0.90
0.95
1.00
1.05
1.10
1.15 TC4AH3AB
'3250 thru '3395
'3070 thru '3095
'3115 thru '3219
ON-STATE CURRENT
vs
ON-STATE VOLTAGE
VT - On-State Voltage - V
0.7 1.5 2 3 4 5 7 15 20110
IT - On-State Current - A
1.5
2
3
4
5
7
15
20
30
40
50
70
150
200
1
10
100
TA = 25 °C
tW = 100 µs
TC3T3AA
NORMALIZED HOLDING CURRENT
vs
JUNCTION TEMPE RATURE
TJ -
-25 0 25 50 75 100 125 150
Normalized Holding Current
0.4
0.5
0.6
0.7
0.8
0.9
1.5
2.0
1.0
TC4AH3AC
7
SEPTEMBER 2001 - REVISED FEBRUARY 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
Typical Characteristics
Figure 6. Figure 7.
CAPACITANCE
vs
OFF-STATE VOLTAGE
VD - Off-state V oltage - V
0.5 1 2 3 5 10 20 30 50 100150
Coff – Off-State Capacitance – pF
15
20
30
40
50
60
70
80
90
10
TC4AH3AD
TJ = 25 °C
Vd = 1 V rms
'3250 thru
'3395
'3115 thru
'3219
'3070 thru
'3095
OFF-STATE CAP ACITANCE
vs
RATED REPETITIVE PEAK OFF-STATE VOLTAGE
VDRM - Repetivive Peak Off-State Voltage - V
50 60 70 80 90 150 200 250 300 350100
Coff - Off-State Capacitance - pF
30
40
50
60
70
80
TC4AH3AF
VD
= 2 V
8
SEPTEMBER 2001 - REVISED FEBRUARY 2003
Specifications are subject to change without notice.
Customers should verify actual device per for mance in their specific applications.
TISP3xxxT3BJ Overvoltage Protector Series
Rating and Thermal Information
Figure 8. Figure 9.
NON-REPETITIVE PEAK ON-STATE CURRENT
vs
CURRENT DURATION
t - Current Duration - s
0·1 1 10 100 1000
ITSM(t) - Non-Repetivive Peak On-State Current - A
1.5
2
3
4
5
6
7
8
9
15
20
1
10
TI3TAA
VGEN = 600 V rms, 50/60 Hz
RGEN = 1.4*VGEN/ITSM(t)
EIA/JES D51-2 ENV IR ONMEN T
EIA/JES D51-3 PCB, TA = 25 °C
SIMULTANEOUS OP ER ATION
OF R AND T TERMINALS. G
TERMINAL CURRENT = 2xITSM(t)
VDRM DERATING FACTOR
vs
MINIMUM AMBIENT TEMPERATURE
TAMIN - Minimum Ambient Temperature - °C
-35 -25 -15 -5 5 15 25-40 -30 -20 -10 0 10 20
Derating Factor
0.92
0.93
0.94
0.95
0.96
0.97
0.98
0.99
1.00 TI4AH3AB
'3250
thru
'3395
'3070
thru
'3095
'3115
thru
'3219
9
SEPTEMBER 2001 - REVISED FEBRUARY 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
SMB03 Pad Size
MD3BJAAA
2.80
(.110)
1.75
(.069)
DIMENSIONS ARE: MILLIMETERS
(INCHES)
1.75
(.069)
1.00
(.039)
0.80
(.032)
2.50
(.099)
TISP3xxxT3BJ Overvoltage Protector Series
Carrier Information
MECHANICAL DATA
Recommended Printed Wiring Land Patter n Dimensions
Device Symbolization Code
Devices will be coded as below.
For production quantities, the carrier will be embossed tape reel pack. Evaluation quantities may be shipped in bulk pack or embossed tape.
Device Symbol ization Co de
TISP3070T3 3070T3
TISP3080T3 3080T3
TISP3095T3 3095T3
TISP3115T3 3115T3
TISP3125T3 3125T3
TISP3145T3 3145T3
TISP3165T3 3165T3
TISP3180T3 3180T3
TISP3200T3 3200T3
TISP3219T3 3219T3
TISP3250T3 3250T3
TISP3290T3 3290T3
TISP3350T3 3350T3
TISP3395T3 3395T3
PackageCarrier Standard Quantity
SMB Embossed Tape Reel Pack 3000
10
SEPTEMBER 2001 - REVISED FEBRUARY 2003
Specifications are subject to change without notice.
Customers should verify actual device per for mance in their specific applications.
MECHANICAL DATA
TISP3xxxT3BJ Overvoltage Protector Series
Modified SMB (DO-214AA) Plastic Surface Mount Triode Package
This surface mount package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will
withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high
humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
SMB03
MDXXCIA
1
3
2
4.06 - 4.57
(.160 - .180)
3.30 - 3.94
(.130 - .155)
0.76 - 1.52
(.030 - .060) 5.21 - 5.59
(.205 - .220)
1.90 - 2.10
(.075 - .083)
0.10 - 0.20
(.004 - .008)
1.42 - 1.57
(.056 - .062)
0.56 - 0.71
(.022 - .028)
0.79 - 0.94
(.031 - .037)
2.00 - 2.40
(.079 - .094)
DIMENSIONS ARE: MILLIMETERS
(INCHES)
11
SEPTEMBER 2001 - REVISED FEBRUARY 2003
Specifications are subject to change without notice.
Customers should verify actual device performance in their specific applications.
MECHANICAL DATA
TISP3xxxT3BJ Overvoltage Protector Series
Tape Dimensions
Direction of Feed Carrier T ape
Embossment
Cover
Tape
Maximum component
rotation
Typical component
cavity center line
Typical component
center line
NOTES: A. The clearance betw een the component and the cavity must be within 0.05 mm (.002 in) MIN. to 0.65 mm (.026 in)
MAX. so that the component cannot rotate more than 20° within the determined cavity.
B. Taped devices are supplied on a reel of the following dimensions:-
Reel diameter: 330 mm ±3.0 mm (1 2.99 in ± .118 in)
Reel hub diameter 75 mm (2.95 in) MIN.
Reel axial hole: 13.0 mm ± 0.5 mm (.512 in ±.02 0 in )
C. 3000 devices are on a reel.
MD3BJAB
SMB03 Package Single-Sprocket Tape
e
3.90 - 4.10
(.154 - .161) 1.50
(.059) MIN.∅
0.40
(.016) MAX.
8.20
(.323) MAX.
4.50
(.177) MAX.
1.55 - 1.65
(.061 - .065)
∅
1.65 - 1.85
(.065 - .073)
7.90 - 8.10
(.311 - .319)
0 MIN.
20°
11.70 - 12.30
(.461 - .484)
5.45 - 5.55
(.215 - .219)
1.95 - 2.05
(.077 - .081)
DIMENSIONS ARE: MILLIMETERS
(INCHES)
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Region Phone Fax
The Americas: +1-909-781-5500 +1-909-781-5700
Europe: +41-41-7685555 +41-41-7685510
Asia-Pacific: +886-2-25624117 +886-2-25624116
Technical Assistance
Region Phone Fax
The Americas: +1-909-781-5500 +1-909-781-5700
Europe: +41-41-7685555 +41-41-7685510
Asia-Pacific: +886-2-25624117 +886-2-25624116
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Reliable Electronic Solutions
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