SM6T Series Vishay General Semiconductor Surface Mount TRANSZORB(R) Transient Voltage Suppressors FEATURES * Low profile package * Ideal for automated placement * Glass passivated chip junction * 600 W peak pulse power capability with a 10/1000 s waveform * Available in uni-directional and bi-directional * Excellent clamping capability * Low inductance * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * Solder dip 260 C, 40 s * Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC DO-214AA (SMB) TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. PRIMARY CHARACTERISTICS VBR 6.8 V to 220 V PPPM 600 W PD 5.0 W IFSM (uni-directional only) 100 A TJ max. 150 C DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional devices use CA suffix (e.g. SM6T12CA). Electrical characteristics apply in both directions. MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, high reliability/ automotive grade (AEC Q101 qualified) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: For uni-directional types the band denotes cathode end, no marking on bi-directional types MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Peak pulse power dissipation on 10/1000 s waveform (1)(2) (Fig. 1) Peak power pulse current with a 10/1000 s waveform (1) (Fig. 3) Power dissipation on infinite heatsink TA = 50 C Peak forward surge current 10 ms single half sine-wave uni-directional only (2) Operating junction and storage temperature range VALUE UNIT PPPM 600 W IPPM See next table A PD 5.0 W IFSM 100 A TJ, TSTG - 65 to +150 C Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 C per Fig. 2 (2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal Document Number: 88385 Revision: 21-Oct-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 SM6T Series Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) DEVICE MARKING CODE TYPE (1) BREAKDOWN VOLTAGE VBR AT IT (2) (V) LEAKAGE CLAMPING VOLTAGE VC AT IPP 10/1000 s CLAMPING VOLTAGE VC AT IPP 8/20 s TEST CURRENT (mA) STAND-OFF VOLTAGE VRM (V) CURRENT (3) IRM AT VRM (A) (V) (A) (V) (A) 10 5.80 1000 10.5 57.0 13.4 298 5.7 T Max. 0-4/C UNI BI MIN. MAX. SM6T6V8A KE7 KE7 6.45 7.14 SM6T7V5A KK7 AK7 7.13 7.88 10 6.40 500 11.3 53.0 14.5 276 6.1 SM6T10A KT7 AT7 9.50 10.5 1.0 8.55 10.0 14.5 41.0 18.6 215 7.3 SM6T12A KX7 AX7 11.4 12.6 1.0 10.2 5.0 16.7 36.0 21.7 184 7.8 SM6T15A LG7 LG7 14.3 15.8 1.0 12.8 1.0 21.2 28.0 27.2 147 8.4 SM6T18A LM7 BM7 17.1 18.9 1.0 15.3 1.0 25.2 24.0 32.5 123 8.8 SM6T22A LT7 BT7 20.9 23.1 1.0 18.8 1.0 30.6 20.0 39.3 102 9.2 SM6T24A LV7 LV7 22.8 25.2 1.0 20.5 1.0 33.2 18.0 42.8 93 9.4 SM6T27A LX7 BX7 25.7 28.4 1.0 23.1 1.0 37.5 16.0 48.3 83 9.6 SM6T30A ME7 CE7 28.5 31.5 1.0 25.6 1.0 41.5 14.5 53.5 75 9.7 SM6T33A MG7 MG7 31.4 34.7 1.0 28.2 1.0 45.7 13.1 59.0 68 9.8 SM6T36A MK7 CK7 34.2 37.8 1.0 30.8 1.0 49.9 12.0 64.3 62 9.9 SM6T39A MM7 CM7 37.1 41.0 1.0 33.3 1.0 53.9 11.1 69.7 57 10.0 SM6T68A NG7 NG7 64.6 71.4 1.0 58.1 1.0 92.0 6.50 121 33 10.4 SM6T100A NV7 NV7 95.0 105 1.0 85.5 1.0 137 4.40 178 22.5 10.6 SM6T150A PK7 PK7 143 158 1.0 128 1.0 207 2.90 265 15 10.8 SM6T200A PR7 PR7 190 210 1.0 171 1.0 274 2.20 353 11.3 10.8 SM6T220A PR8 PR8 209 231 1.0 188 1.0 328 2.00 388 10.3 10.8 Notes: (1) For bi-directional devices add suffix "CA" (2) VBR measured after IT applied for 300 s square wave pulse (3) For bipolar devices with VR = 10 V or under, the IT limit is doubled THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Thermal resistance, junction to ambient air SYMBOL VALUE RJA 100 C/W RJL 20 C/W (1) Thermal resistance, junction to leads UNIT Note: (1) Mounted on minimum recommended pad layout ORDERING INFORMATION (Example) PREFERRED P/N SM6T10A-E3/52 SM6T10A-E3/5B UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE 0.096 52 750 7" diameter plastic tape and reel 0.096 5B 3200 13" diameter plastic tape and reel (1) 0.096 52 750 7" diameter plastic tape and reel SM6T10AHE3/5B (1) 0.096 5B 3200 13" diameter plastic tape and reel SM6T10AHE3/52 Note: (1) Automotive grade AEC Q101 qualified www.vishay.com 2 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88385 Revision: 21-Oct-08 SM6T Series Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 6000 10 1 0.2 x 0.2" (5.0 x 5.0 mm) Copper Pad Areas 0.1 0.1 s Measured at Zero Bias 1000 VR, Measured at Stand-Off Voltage VWM 100 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p Uni-Directional Bi-Directional 10 1.0 s 10 s 100 s 1.0 ms 1 10 ms 10 100 td - Pulse Width (s) VWM - Reverse Stand-Off Voltage (V) Figure 1. Peak Pulse Power Rating Curve Figure 4. Typical Junction Capacitance 200 100 100 Transient Thermal Impedance (C/W) Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % CJ - Junction Capacitance (pF) PPPM - Peak Pulse Power (kW) 100 75 50 25 25 50 75 100 125 150 175 1.0 0.1 0.001 0 0 10 200 0.01 0.1 1 10 100 1000 TJ - Initial Temperature (C) t - Pulse Duration (s) Figure 2. Pulse Power or Current vs. Initial Junction Temperature Figure 5. Typical Transient Thermal Impedance Peak Value IPPM 100 200 TJ = 25 C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 s Peak Forward Surge Current (A) IPPM - Peak Pulse Current, % IRSM 150 Half Value - IPP IPPM 2 50 10/1000 s Waveform as defined by R.E.A. 8.3 ms Single Half Sine-Wave Uni-Directional Only 100 td 10 0 0 1.0 2.0 3.0 4.0 1 10 100 t - Time (ms) Number of Cycles at 60 Hz Figure 3. Pulse Waveform Figure 6. Maximum Non-Repetitive Peak Forward Surge Current Document Number: 88385 Revision: 21-Oct-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 3 SM6T Series Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AA (SMB) Mounting Pad Layout Cathode Band 0.085 (2.159) MAX. 0.155 (3.94) 0.130 (3.30) 0.086 (2.20) 0.077 (1.95) 0.086 (2.18) MIN. 0.180 (4.57) 0.160 (4.06) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.220 REF. 0.096 (2.44) 0.084 (2.13) 0.060 (1.52) 0.030 (0.76) 0.008 (0.2) 0 (0) 0.220 (5.59) 0.205 (5.21) www.vishay.com 4 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com Document Number: 88385 Revision: 21-Oct-08 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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