IPB90R340C3 CoolMOSTM Power Transistor Product Summary Features * Lowest figure-of-merit RON x Qg * Extreme dv/dt rated VDS @ TJ=25C 900 V RDS(on),max @TJ=25C 0.34 W 94 nC Qg,typ * High peak current capability * Qualified according to JEDEC1) for industrial applications PG-TO263 * Pb-free lead plating; RoHS compliant * Ultra low gate charge CoolMOSTM 900V is designed for: * Quasi Resonant Flyback / Forward topologies * SMPS * PC Silverbox * Lighting * Solar Type Package Marking IPB90R340C3 PG-TO263 9R340C Maximum ratings, at T J=25 C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 C 15 T C=100 C 9.5 Pulsed drain current 2) I D,pulse T C=25 C 34 Avalanche energy, single pulse E AS I D=3.1 A, V DD=50 V 678 Avalanche energy, repetitive t AR 2),3) E AR I D=3.1 A, V DD=50 V 1 Avalanche current, repetitive t AR 2),3) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS Power dissipation P tot Operating and storage temperature T J, T stg Rev. 2.0 Unit A mJ 3.1 A V DS=0...400 V 50 V/ns static 20 V AC (f>1 Hz) 30 T C=25 C 208 W -55 ... 150 C page 1 2012-04-16 IPB90R340C3 Maximum ratings, at T J=25 C, unless otherwise specified Parameter Symbol Continuous diode forward current IS Diode pulse current 2) Reverse diode dv /dt 4) Parameter Value Conditions Unit 9.2 A T C=25 C I S,pulse 34 dv /dt 4 V/ns Values Unit Symbol Conditions min. typ. max. - - 0.6 - - 62 - 35 - - - 260 C V Thermal characteristics Thermal resistance, junction - case R thJC R thJA Thermal resistance, junction ambient R thJA SMD version, device on PCB: at minimum footprint SMD version, device on PCB: at 6 cm cooling area Soldering temperature, only reflow soldering allowed; part not qualified for direct wave soldering but bottom side PCB wave soldering is allowed T sold K/W 5) reflow MSL1 Electrical characteristics, at T J=25 C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 A 900 - - Gate threshold voltage V GS(th) V DS=V GS, I D=1 mA 2.5 3 3.5 Zero gate voltage drain current I DSS V DS=900 V, V GS=0 V, T j=25 C - - 2 V DS=900 V, V GS=0 V, T j=150 C - 20 - A Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=9.2 A, T j=25 C - 0.28 0.34 W V GS=10 V, I D=9.2 A, T j=150 C - 0.76 - f =1 MHz, open drain - 1.3 - Gate resistance Rev. 2.0 RG page 2 W 2012-04-16 IPB90R340C3 Parameter Values Symbol Conditions Unit min. typ. max. - 2400 - - 120 - - 71 - - 280 - - 70 - - 20 - - 400 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Effective output capacitance, energy C o(er) related 6) V GS=0 V, V DS=100 V, f =1 MHz V GS=0 V, V DS=0 V to 500 V pF Effective output capacitance, time related 7) C o(tr) Turn-on delay time t d(on) Rise time tr Turn-off delay time t d(off) Fall time tf - 25 - Gate to source charge Q gs - 11 - Gate to drain charge Q gd - 41 - Gate charge total Qg - 94 - Gate plateau voltage V plateau - 4.6 - V - 0.8 1.2 V - 510 - ns - 11 - C - 41 - A V DD=400 V, V GS=10 V, I D=9.2A, R G=23.1 W ns Gate Charge Characteristics V DD=400 V, I D=9.2 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm V GS=0 V, I F=9.2 A, T j=25 C V R=400 V, I F=I S, di F/dt =100 A/s 1) J-STD20 and JESD22 2) Pulse width t p limited by T J,max 3) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 4) ISDID, di/dt200A/s, VDClink=400V, Vpeak<V(BR)DSS, TJ<TJ,max, identical low side and high side switch 5) Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. 6) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 50% VDSS. 7) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 50% V DSS. Rev. 2.0 page 3 2012-04-16 IPB90R340C3 1 Power dissipation 2 Safe operating area P tot=f(T C) I D=f(V DS); T C=25 C; D =0 parameter: t p 102 250 limited by on-state resistance 1 s 200 10 s 101 100 s 150 ID [A] Ptot [W] 1 ms 10 ms 100 DC 100 50 0 0 25 50 75 100 125 10-1 150 1 10 TC [C] 100 1000 VDS [V] 3 Max. transient thermal impedance 4 Typ. output characteristics ZthJC=f(tP) I D=f(V DS); T J=25 C parameter: D=t p/T parameter: V GS 100 50 10 V 8V 40 6V 30 0.2 5.5 V ID [A] ZthJC [K/W] 0.5 10-1 0.1 20 5V 0.05 0.02 0.01 10 4.5 V single pulse 4V 0 10-2 10-5 10-4 10-3 10-2 10-1 5 10 15 20 25 VDS [V] tp [s] Rev. 2.0 0 page 4 2012-04-16 IPB90R340C3 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T J=150 C R DS(on)=f(I D); T J=150 C parameter: V GS parameter: V GS 25 5 20 V 10 V 20 4 8V 6V 5V RDS(on) [W] 15 ID [A] 4.5 V 10 3 10 V 2 5V 4V 4.8 V 5 1 0 4.5 V 4V 0 0 5 10 15 20 25 0 5 10 15 VDS [V] 20 25 30 ID [A] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D=9.2 A; V GS=10 V I D=f(V GS); V DS=20V parameter: T J 1 50 25 C 40 0.6 30 98 % typ ID [A] RDS(on) [W] 0.8 150 C 0.4 20 0.2 10 0 0 -60 -20 20 60 100 140 180 2 4 6 8 10 VGS [V] TJ [C] Rev. 2.0 0 page 5 2012-04-16 IPB90R340C3 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=9.2 A pulsed I F=f(V SD) parameter: V DD parameter: T J 102 10 25 C, 98% 8 150 C, 98% 101 6 150 C 720 V IF [A] VGS [V] 400 V 25 C 4 100 2 10-1 0 0 20 40 60 80 100 0 0.5 1 Qgate [nC] 1.5 2 VSD [V] 11 Avalanche energy 12 Drain-source breakdown voltage E AS=f(T J); I D=3.1A; V DD=50 V V BR(DSS)=f(T J); I D=0.25 mA 700 1050 600 1000 VBR(DSS) [V] EAS [mJ] 500 400 300 950 900 200 850 100 0 800 25 50 75 100 125 150 TJ [C] Rev. 2.0 -60 -20 20 60 100 140 180 TJ [C] page 6 2012-04-16 IPB90R340C3 13 Typ. capacitances 14 Typ. Coss stored energy C =f(V DS); V GS=0 V; f =1 MHz E oss= f(V DS) 12 104 Ciss 10 103 102 Eoss [J] C [pF] 8 Coss 6 4 101 2 Crss 100 0 0 100 200 300 400 500 600 VDS [V] Rev. 2.0 0 100 200 300 400 500 600 VDS [V] page 7 2012-04-16 IPB90R340C3 Definition of diode switching characteristics Rev. 2.0 page 8 2012-04-16 IPB90R340C3 PG-TO263 Outlines Rev. 2.0 page 9 2012-04-16 IPB90R340C3 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. 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