NUP1105LT1G, SZNUP1105LT1G Single Line CAN/LIN Bus Protector The NUP1105L has been designed to protect LIN and single line CAN transceivers from ESD and other harmful transient voltage events. This device provides bidirectional protection for the data line with a single SOT-23 package, giving the system designer a low cost option for improving system reliability and meeting stringent EMI requirements. http://onsemi.com SOT-23 BIDIRECTIONAL VOLTAGE SUPPRESSOR 350 W PEAK POWER Features SOT-23 Package Allows One Separate Bidirectional Configuration 350 W Peak Power Dissipation per Line (8 x 20 msec Waveform) Low Reverse Leakage Current (< 100 nA) IEC Compatibility: - IEC 61000-4-2 (ESD): Level 4 - IEC 61000-4-4 (EFT): 40 A - 5/50 ns - IEC 61000-4-5 (Lighting) 8.0 A (8/20 ms) ISO 7637-1, Nonrepetitive EMI Surge Pulse TBD ISO 7637-3, Repetitive Electrical Fast Transient (EFT) TBD EMI Surge Pulses Flammability Rating UL 94 V-0 SZ Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable Pb-Free Packages are Available* SOT-23 CASE 318 STYLE 27 1 3 2 MARKING DIAGRAM 27HMG G 1 Applications Automotive Electronics 27H M G LIN Bus Single Line CAN Industrial Control Networks Smart Distribution Systems (SDS) DeviceNet PIN 1. ANODE 2. ANODE 3. CATHODE = Device Code = Date Code = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping NUP1105LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel SZNUP1105LT1G SOT-23 (Pb-Free) 3,000 / Tape & Reel NUP1105LT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Semiconductor Components Industries, LLC, 2012 February, 2012 - Rev. 4 1 Publication Order Number: NUP1105L/D NUP1105LT1G, SZNUP1105LT1G MAXIMUM RATINGS (TJ = 25C, unless otherwise specified) Symbol PPK Rating Value Peak Power Dissipation 8 x 20 ms Double Exponential Waveform (Note 1) Unit W 350 TJ Operating Junction Temperature Range -55 to 150 C TJ Storage Temperature Range -55 to 150 C TL Lead Solder Temperature (10 s) 260 C Human Body model (HBM) Machine Model (MM) IEC 61000-4-2 Specification (Contact) 16 400 30 kV V kV ESD Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Non-repetitive current pulse per Figure 1. ELECTRICAL CHARACTERISTICS (TJ = 25C, unless otherwise specified) Symbol VRWM Parameter Test Conditions Reverse Working Voltage (Note 2) Breakdown Voltage IT = 1 mA (Note 3) IR Reverse Leakage Current VRWM = 24 V VC Clamping Voltage VC VBR Min Typ Max 24 Unit V 25.7 28.4 V 100 nA IPP = 5 A (8 x 20 ms Waveform) (Note 4) 40 V Clamping Voltage IPP = 8 A (8 x 20 ms Waveform) (Note 4) 44 V IPP Maximum Peak Pulse Current 8 x 20 ms Waveform (Note 4) 8.0 A CJ Capacitance VR = 0 V, f = 1 MHz (Anode to GND) VR = 0 V, f = 1 MHz (Anode to Anode) 60 30 pF 15 2. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC or continuous peak operating voltage level. 3. VBR is measured at pulse test current IT. 4. Pulse waveform per Figure 1. 5. Include SZ-prefix devices where applicable. http://onsemi.com 2 NUP1105LT1G, SZNUP1105LT1G TYPICAL PERFORMANCE CURVES (TJ = 25C unless otherwise noted) % OF PEAK PULSE CURRENT WAVEFORM PARAMETERS tr = 8 ms td = 20 ms 90 80 c-t 70 IPP, PEAK PULSE CURRENT (A) 12.0 110 100 60 td = IPP/2 50 40 30 20 10 0 0 10 5 20 15 8.0 6.0 4.0 2.0 0.0 30 25 PULSE WAVEFORM 8 x 20 ms per Figure 1 10.0 25 30 45 50 Figure 2. Clamping Voltage vs Peak Pulse Current Figure 1. Pulse Waveform, 8 20 ms 30 45 40 29 35 28 VZ, (V) 30 25 20 VZ 27 26 15 10 25 5 -10 40 90 140 24 -60 190 -10 40 90 140 190 TEMPERATURE (C) TEMPERATURE (C) Figure 3. Typical Leakage vs. Temperature Figure 4. Typical VZ @ 1.0 mA vs. Temperature 60 25C 50 CAPACITANCE (pF) IR, (A) 40 VC, CLAMPING VOLTAGE (V) t, TIME (ms) 0 -60 35 40 30 20 10 0 0 5 10 15 20 VBIAS Figure 5. Capacitance vs. VBIAS http://onsemi.com 3 25 NUP1105LT1G, SZNUP1105LT1G APPLICATIONS SECTION The NUP1105L provides a transient voltage suppression solution for the LIN data communication bus. The NUP1105L is a dual bidirectional TVS device in a compact SOT-23 package. This device is based on Zener technology that optimizes the active area of a PN junction to provide robust protection against transient EMI surge voltage and ESD. The NUP1105L has been tested to EMI and ESD levels that exceed the specifications of popular high speed LIN networks. VBattery = 8 to 18 V Voltage Regulator Receiver The NUP1105L device can be used to provide transcient voltage suppression for a single data line CAN system. Figure 7 provides an example of a single data line CAN protection circuit. CAN Transceiver NUP1105L Figure 7. High-Speed and Fault Tolerant CAN TVS Protection Circuit VOUT = 5 V LIN Bus Transmitter LIN Transceiver CAN_Data_Line NUP1105L Figure 6. LIN Transceiver http://onsemi.com 4 NUP1105LT1G, SZNUP1105LT1G PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 --- 10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 --- MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10 STYLE 27: PIN 1. CATHODE 2. CATHODE 3. CATHODE L1 VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches SDS is a registered trademark of Honeywell International Inc. DeviceNet is a trademark of Rockwell Automation. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. 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