Semiconductor Components Industries, LLC, 2012
February, 2012 − Rev. 4
1Publication Order Number:
NUP1105L/D
NUP1105LT1G,
SZNUP1105LT1G
Single Line CAN/LIN
Bus Protector
The NUP1105L has been designed to protect LIN and single line
CAN transceivers from ESD and other harmful transient voltage
events. This device provides bidirectional protection for the data line
with a single SOT−23 package, giving the system designer a low cost
option for improving system reliability and meeting stringent EMI
requirements.
Features
SOT−23 Package Allows One Separate Bidirectional Configuration
350 W Peak Power Dissipation per Line (8 x 20 msec Waveform)
Low Reverse Leakage Current (< 100 nA)
IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4
− IEC 61000−4−4 (EFT): 40 A – 5/50 ns
− IEC 61000−4−5 (Lighting) 8.0 A (8/20 ms)
ISO 7637−1, Nonrepetitive EMI Surge Pulse TBD
ISO 7637−3, Repetitive Electrical Fast Transient (EFT) TBD
EMI Surge Pulses
Flammability Rating UL 94 V−0
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
Pb−Free Packages are Available*
Applications
Automotive Electronics
LIN Bus
Single Line CAN
Industrial Control Networks
Smart Distribution Systems (SDS)
DeviceNet
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
Device Package Shipping†
ORDERING INFORMATION
SOT−23
CASE 318
STYLE 27
MARKING DIAGRAM
27H = Device Code
M = Date Code
G= Pb−Free Package
SOT−23 BIDIRECTIONAL
VOLTAGE SUPPRESSOR
350 W PEAK POWER
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
27HMG
G
1
3
2
PIN 1. ANODE
2. ANODE
3. CATHODE
NUP1105LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
NUP1105LT3G SOT−23
(Pb−Free)
10,000 /
Tape & Reel
(Note: Microdot may be in either location)
SZNUP1105LT1G SOT−23
(Pb−Free)
3,000 /
Tape & Reel
NUP1105LT1G, SZNUP1105LT1G
http://onsemi.com
2
MAXIMUM RATINGS (TJ = 25C, unless otherwise specified)
Symbol Rating Value Unit
PPK Peak Power Dissipation
8 x 20 ms Double Exponential Waveform (Note 1) 350
W
TJOperating Junction Temperature Range −55 to 150 C
TJStorage Temperature Range −55 to 150 C
TLLead Solder Temperature (10 s) 260 C
ESD Human Body model (HBM)
Machine Model (MM)
IEC 61000−4−2 Specification (Contact)
16
400
30
kV
V
kV
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Non-repetitive current pulse per Figure 1.
ELECTRICAL CHARACTERISTICS (TJ = 25C, unless otherwise specified)
Symbol Parameter Test Conditions Min Typ Max Unit
VRWM Reverse Working Voltage (Note 2) 24 V
VBR Breakdown Voltage IT = 1 mA (Note 3) 25.7 28.4 V
IRReverse Leakage Current VRWM = 24 V 15 100 nA
VCClamping Voltage IPP = 5 A (8 x 20 ms Waveform) (Note 4) 40 V
VCClamping Voltage IPP = 8 A (8 x 20 ms Waveform) (Note 4) 44 V
IPP Maximum Peak Pulse Current 8 x 20 ms Waveform (Note 4) 8.0 A
CJ Capacitance VR = 0 V, f = 1 MHz (Anode to GND)
VR = 0 V, f = 1 MHz (Anode to Anode)
60
30
pF
2. TVS devices are normally selected according to the working peak reverse voltage (VRWM), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. VBR is measured at pulse test current IT
.
4. Pulse waveform per Figure 1.
5. Include SZ-prefix devices where applicable.
NUP1105LT1G, SZNUP1105LT1G
http://onsemi.com
3
TYPICAL PERFORMANCE CURVES
(TJ = 25C unless otherwise noted)
Figure 1. Pulse Waveform, 8 20 ms
110
90
80
70
60
50
40
30
20
10
00 5 15 25
t, TIME (ms)
% OF PEAK PULSE CURRENT
WAVEFORM
PARAMETERS
tr = 8 ms
td = 20 ms
td = IPP/2
30
Figure 2. Clamping Voltage vs Peak Pulse Current
12.0
10.0
8.0
6.0
4.0
2.0
0.025 40
VC, CLAMPING VOLTAGE (V)
IPP
, PEAK PULSE CURRENT (A)
30 35 45 50
100
10 20
c−t
PULSE WAVEFORM
8 x 20 ms per Figure 1
0
5
10
15
20
25
30
35
40
45
−60 −10 40 90 140 190
Figure 3. Typical Leakage vs. Temperature
TEMPERATURE (C)
IR, (A)
24
25
26
27
28
29
30
−60 −10 40 90 140 190
Figure 4. Typical VZ @ 1.0 mA vs. Temperature
VZ, (V)
TEMPERATURE (C)
VZ
0
10
20
30
40
50
60
0 5 10 15 20 25
Figure 5. Capacitance vs. VBIAS
VBIAS
CAPACITANCE (pF)
25C
NUP1105LT1G, SZNUP1105LT1G
http://onsemi.com
4
APPLICATIONS SECTION
The NUP1105L provides a transient voltage suppression
solution for the LIN data communication bus. The
NUP1105L is a dual bidirectional TVS device in a compact
SOT−23 package. This device is based on Zener technology
that optimizes the active area of a PN junction to provide
robust protection against transient EMI surge voltage and
ESD. The NUP1105L has been tested to EMI and ESD
levels that exceed the specifications of popular high speed
LIN networks.
Figure 6. LIN Transceiver
Voltage
Regulator
Transmitter
Receiver LIN Bus
NUP1105L
VOUT = 5 V
VBattery =
8 to 18 V
LIN Transceiver
The NUP1105L device can be used to provide transcient
voltage suppression for a single data line CAN system.
Figure 7 provides an example of a single data line CAN
protection circuit.
Figure 7. High−Speed and Fault Tolerant CAN TVS
Protection Circuit
CAN
Transceiver
CAN_Data_Line
NUP1105L
NUP1105LT1G, SZNUP1105LT1G
http://onsemi.com
5
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
D
A1
3
12
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
ǒmm
inchesǓ
SCALE 10:1
0.8
0.031
0.9
0.035
0.95
0.037
0.95
0.037
2.0
0.079
SOLDERING FOOTPRINT
VIEW C
L
0.25
L1
q
e
EE
b
A
SEE VIEW C
DIM
A
MIN NOM MAX MIN
MILLIMETERS
0.89 1.00 1.11 0.035
INCHES
A1 0.01 0.06 0.10 0.001
b0.37 0.44 0.50 0.015
c0.09 0.13 0.18 0.003
D2.80 2.90 3.04 0.110
E1.20 1.30 1.40 0.047
e1.78 1.90 2.04 0.070
L0.10 0.20 0.30 0.004
0.040 0.044
0.002 0.004
0.018 0.020
0.005 0.007
0.114 0.120
0.051 0.055
0.075 0.081
0.008 0.012
NOM MAX
L1
H
2.10 2.40 2.64 0.083 0.094 0.104
HE
0.35 0.54 0.69 0.014 0.021 0.029
c
0−−− 10 0 −−− 10
q
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
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PUBLICATION ORDERING INFORMATION
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5817−1050
NUP1105L/D
SDS is a registered trademark of Honeywell International Inc.
DeviceNet is a trademark of Rockwell Automation.
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