TIP102 — NPN Epitaxial Silicon Darlington Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP102 Rev. 1.1.0
December 2014
TIP102
NPN Epitaxial Silicon Darlington Transistor
Features
Monolithic Construction with Built-in Base-Emitter Shunt Resistors
High DC Current Gain: hFE = 1000 @ VCE = 4 V, IC = 3 A (Minimum)
Collector-Emitter Sustaining Voltage
Low Collector-Emitter Saturation Voltage
Industr ial Use
Complementary to TIP107
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions an d s tres si ng the parts to these lev el s i s n ot re co mme nde d. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
TIP102 TIP102 TO-220 3L (Single Gauge) Bulk
TIP102TU TIP102 TO-220 3L (Single Gauge) Rail
Symbol Parameter Value Unit
VCBO Collector-Base Voltage 100 V
VCEO Collector-Emitter Voltage 100 V
VEBO Emitter-Base Voltage 5 V
ICCollector Current (DC) 8 A
ICP Collector Current (Pulse) 15 A
IBBase Current (DC) 1 A
TJJunction Temperature 150 °C
TSTG Storage Temperature Range -65 to 150 °C
1.Base 2.Collector 3.Emitter
1TO-220
R1 10kΩ
R2 0.6kΩ
Equivalent Circuit
B
E
C
R1 R2
TIP102 — NPN Epitaxial Silicon Darlington Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP102 Rev. 1.1.0 2
Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Electrical Characteristics(1)
Values are at TC = 25°C unless otherwise noted.
Note:
1. Pulse test: pw300 μs, duty cycle 2%.
Symbol Parameter Value Unit
PC Collector Dissipation (TA = 25°C) 2 W
Collector Dissipation (TC = 25°C) 80
Symbol Parameter Conditions Min. Max. Unit
VCEO(sus) Collector-Emitter Sustaining Voltage IC = 30 mA, IB = 0 100 V
ICEO Collector Cut-Off Current VCE = 50 V, IB = 050μA
ICBO Collector Cut-Off Current VCB = 100 V, IE = 0 50 μA
IEBO Emitter Cut-Off Current VEB = 5 V, IC = 0 2 mA
hFE DC Current Gain VCE = 4 V, IC = 3 A 1000 20000
VCE = 4 V, IC = 8 A 200
VCE(sat) Collector-Emitter Saturation Voltage IC = 3 A, IB = 6 mA 2.0 V
IC = 8 A, IB = 80 mA 2.5
VBE(on) Base-Emitter On Voltage VCE = 4 V, IC = 8 A 2.8 V
Cob Output Capacitance VCB = 10 V, IE = 0,
f = 0.1 MHz 200 pF
TIP102 — NPN Epitaxial Silicon Darlington Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP102 Rev. 1.1.0 3
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC Current Gain
Figure 3. Collector-Emitter Saturation Voltage and
Base-Emitter Saturation Voltage Figure 4. Collector Output Capacitance
Figure 5. Safe Operating Area Figure 6. Power Derating
012345
0
1
2
3
4
5
0.8mA
0.9mA
IB = 1mA
700
μ
A
600
μ
A
500
μ
A
400
μ
A
IB = 300μA
IB = 2 00 μA
IB = 100 μA
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0.1 1 10
100
1k
10k
VCE = 4V
hFE, DC CURRENT GAIN
Ic[A], COLLECTOR CURRENT
0.1 1 10 100
100
1k
10k
IC = 500 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat) [mV], SATURATION VOLTAGE
IC[A], COL LECTOR CURRENT
0.1 1 10 100
1
10
100
1k
10k
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
0.1 1 10 100
0.01
0.1
1
10
100
TIP102
TIP101
5ms
100
μ
s
1ms
DC
TIP100
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
20
40
60
80
100
120
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
TIP102 — NPN Epitaxial Silicon Darlington Transistor
© 2001 Fairchild Semiconductor Corporation www.fairchildsemi.com
TIP102 Rev. 1.1.0 4
Physical Dimensions
Figure 7. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I72
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