2005-10-17
1
BFR380F
312
NPN Silicon RF Transistor
Preliminary data
• High current capability and low figure for
wide dynamic range application
• Low voltage operation
• Ideal for low phase noise oscillators up to 3.5 GHz
• Low noise figure: 1.1 dB at 1.8 GHz
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BFR380F FCs 1 = B 2 = E 3 = C TSFP-3
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 6 V
Collector-emitter voltage VCES 15
Collector-base voltage VCBO 15
Emitter-base voltage VEBO 2
Collector current IC80 mA
Base current IB14
Total power dissipation1)
TS ≤ 95°C Ptot 380 mW
Junction temperature T
j
150 °C
Ambient temperature T
A
-65 ... 150
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Parameter Symbol Value Unit
Junction - soldering point2) RthJS ≤ 145 K/W
1TS is measured on the collector lead at the soldering point to the pcb
2For calculation of RthJA please refer to Application Note Thermal Resistance
2005-10-17
2
BFR380F
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 1 mA, IB = 0 V(BR)CEO 6 9 - V
Collector-emitter cutoff current
VCE = 15 V, VBE = 0 ICES - - 10 µA
Collector-base cutoff current
VCB = 5 V, IE = 0 ICBO - - 100 nA
Emitter-base cutoff current
VEB = 1 V, IC = 0 IEBO - - 1 µA
DC current gain
IC = 40 mA, VCE = 3 V, pulse measured hFE 90 120 160 -
2005-10-17
3
BFR380F
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
IC = 40 mA, VCE = 3 V, f = 1 GHz fT11 14 - GHz
Collector-base capacitance
VCB = 5 V, f = 1 MHz, VBE = 0 ,
emitter grounded
Ccb - 0.5 0.7 pF
Collector emitter capacitance
VCE = 5 V, f = 1 MHz, VBE = 0 ,
base grounded
Cce - 0.2 -
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz, VCB = 0 ,
collector grounded
Ceb - 1 -
Noise figure
IC = 8 mA, VCE = 3 V, ZS = ZSopt , f = 1.8 GHz
IC = 8 mA, VCE = 3 V, ZS = ZSopt , f = 3 GHz
Fmin
-
-
1.1
1.6
-
-
dB
Power gain, maximum available1)
IC = 40 mA, VCE = 3 V, ZS = ZSopt ,
ZL = ZLopt , f = 1.8 GHz
IC = 40 mA, VCE = 3 V, ZS = ZSopt ,
ZL = ZLopt , f = 3 GHz
Gma
-
-
13.5
9.5
-
-
Transducer gain
IC = 40 mA, VCE = 3 V, ZS = ZL = 50Ω ,
f = 1.8 GHz
f = 3 GHz
|S21e|2
-
-
11
7
-
-
dB
Third order intercept point at output2)
VCE = 3 V, IC = 40 mA, ZS=ZL=50 Ω, f = 1.8 GHz IP3- 29 - dBm
1dB Compression point at output
IC = 40 mA, VCE = 3 V, ZS=ZL=50 Ω, f = 1.8 GHz P-1dB - 17 -
1Gma = |S21e / S12e| (k-(k²-1)1/2)
2IP3 value depends on termination of all intermodulation frequency components.
Termination used for this measurement is 50Ω from 0.1 MHz to 6 GHz
2005-10-17
4
BFR380F
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transitor Chip Data:
NF = 1.107 -
ISE = 0.2676 fA
NR = 1.056 -
ISC = 6.9739 pA
IRB = 0.2564 mA
RC = 0.101 Ω
MJE = 0.5 -
VTF = 0.338 V
CJC = 840 fF
XCJC = 0.202 -
VJS = 0.75 V
EG = 1.11 eV
TNOM 300 K
IS = 9.965 fA
VAF = 27.69 V
NE = 1.64 -
VAR = 30 V
NC = 1.678 -
RBM = 1.322 Ω
CJE = 116.7 fF
TF = 8.789 ps
ITF = 1.529 mA
VJC = 6.949 V
TR = 6.949 ns
MJS = 0-
XTI = 0-
BF = 116.376 -
IKF = 736 mA
BR = 22.802 -
IKR = 0.011 A
RB = 9.71 Ω
RE = 221 mΩ
VJE = 0.782 V
XTF = 0.496 -
PTF = 0 deg
MJC = 0.472 -
CJS = 0 fF
NK = 0.5 -
FC = 0.975
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil- und Satellitentechnik (IMST)
Package Equivalent Circuit: L1 = 0.556 nH
L2 = 0.675 nH
L3 = 0.381 nH
C1 = 43 fF
C2 = 123 fF
C3 = 66 fF
C4 = 10 fF
C5 =36 fF
C
6
= 47 fF
EHA07524
Transistor C' L
E'
B'
3
4
C
C
Chip
E
L
1
5
C
B
2
L
C
6
C
1
C
2
C
3
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http//www.infineon.com/silicondiscretes
Valid up to 6GHz
2005-10-17
5
BFR380F
Total power dissipation Ptot = ƒ(TS)
0 15 30 45 60 75 90 105 120 °C 150
TS
0
50
100
150
200
250
300
mW
400
Ptot
Permissible Pulse Load RthJS = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
1
10
2
10
3
10
K/W
RthJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
Ptotmax/PtotDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
Collector-base capacitance Ccb= ƒ(VCB)
f = 1MHz
0 2 4 6 8 10 12 V16
VCB
0
0.2
0.4
0.6
0.8
1
1.2
pF
1.6
Ccb
2005-10-17
6
BFR380F
Third order Intercept Point IP3=ƒ(IC)
(Output, ZS=ZL=50Ω)
VCE = parameter, f = 1.8GHz
0 10 20 30 40 50 60 70 mA 90
IC
4
6
8
10
12
14
16
18
20
22
24
26
28
dBm
32
IP3
1V
2V
3V
4V
Transition frequency fT= ƒ(IC)
f = 1GHz
VCE = parameter
0 10 20 30 40 50 60 70 80 mA 100
IC
4
5
6
7
8
9
10
11
12
13
14
GHz
16
fT
5V
3V
2V
1V
0.7V
Power gain Gma, Gms = ƒ(IC)
f = 1.8GHz
VCE = parameter
0 10 20 30 40 50 60 70 80 mA 100
IC
7
8
9
10
11
12
13
dB
15
G
5V
3V
2V
1V
0.7V
Power Gain Gma, Gms = ƒ(f)
VCE = parameter
0 0.5 1 1.5 2 2.5 3 3.5 GHz 4.5
f
0
5
10
15
20
25
30
35
dB
45
G
Ic = 40mA
5V
2V
1V
0.7V
2005-10-17
7
BFR380F
Power Gain |S21|² = ƒ(f)
VCE = parameter
0 0.5 1 1.5 2 2.5 3 3.5 GHz 4.5
f
0
5
10
15
20
25
30
dB
40
G
Ic = 40mA
5V
2V
1V
0.7V
Power Gain Gma, Gms = ƒ(VCE):
|S21|² = ƒ(VCE): - - - -
f = parameter
0123456V8
VCE
7
8
9
10
11
12
13
14
15
16
17
18
19
dB
21
G
0.9GHz
1.8GHz
0.9GHz
1.8GHz
Ic = 40mA
Power gain Gma, Gms = ƒ (IC)
VCE = 3V
f = parameter
0 20 40 60 80 mA 120
IC
5
7
9
11
13
15
17
19
dB
22
G
0.9GHz
1.8GHz
2.4GHz
3GHz
4GHz
Noise figure F = ƒ(IC)
VCE = 3V, ZS = ZSopt
0 10 20 30 40 50 60 70 80
0
0.5
1
1.5
2
2.5
3
3.5
I
c
[mA]
F [dB]
f = 2.4GHz
f = 0.9GHz
f = 4GHz
f = 1.8GHz
f = 3GHz
2005-10-17
8
BFR380F
Noise figure F = ƒ(IC)
VCE = 3V, f = 1.8 GHz
0 10 20 30 40 50 60 70 80
0
0.5
1
1.5
2
2.5
3
3.5
4
I
c
[mA]
F [dB]
Z
S
= 50Ω
Z
S
= Z
Sopt
Noise figure F = ƒ(f)
VCE = 3V, ZS = ZSopt
012345
0
0.5
1
1.5
2
2.5
3
F [dB]
f [GHz]
I
C
= 40mA
I
C
= 8.0mA
Source impedance for min.
noise figure vs. frequency
VCE = 3 V, IC = 8.0mA/40.0mA
10.1 0.2 0.3 0.4 0.5 21.5 3 4 5
0
5
1
−5
−1
10
−10
0.5
1.5
−0.5
−1.5
0.1
−0.1
0.2
2
−0.2
−2
0.3
−0.3
0.4
3
−0.4
−3
4
−4
1.8GHz
2.4GHz
4GHz
0.9GHz
I
c
= 40mA
3GHz I
c
= 8.0mA
2005-10-17
9
BFR380F
Package TSFP-3
4
Package Outline
Foot Print
Marking Layout
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
±0.05
0.2
3
±0.05
1.2
12
10˚ MAX.
±0.05
0.8
1.2±0.05
±0.04
0.55
±0.05
0.2
±0.05
0.15
±0.05
0.2
0.4
±0.05
0.4
±0.05
0.4
0.45
1.05
0.4 0.4
Manufacturer
Type code BCR847BF
Example
Pin 1
0.2
1.35
0.3
0.7
1.2
1.5
8
Pin 1
2005-10-17
10
BFR380F
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München
© Infineon Technologies AG 2005.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be
considered as a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of
non-infringement, regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.Infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon
Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body, or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be endangered.
