LESHAN RADIO COMPANY, LTD.
G3–1/2
1
3
2
High Voltage Switching Diode
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse V oltage V R250 Vdc
Peak Forward Current I F200 mAdc
Peak Forward Surge Current I FM(surge) 625 mAdc
DEVICE MARKING
BAS21LT1 = JS
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR– 5 Board, (1) PD225 mW
TA = 25°C
Derate above 25°C 1.8 mW/°C
Thermal Resistance, Junction to Ambient RθJA 55 6 °C/W
Total Device Dissipation PD300 mW
Alumina Substrate, (2) TA = 25°C
Derate above 25°C 2.4 mW/°C
Thermal Resistance, Junction to Ambient RθJA 417 °C/W
Junction and Storage Temperature TJ , Tstg –55 to +150 °C
ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse V oltage Leakage Current I RµAdc
(V R = 200Vdc) — 1.0
(V R = 200Vdc, T J = 150°C) — 100
Reverse Breakdown V oltage V (BR) 250 — Vdc
(I BR = 100 µAdc)
Forward V oltage V FmV
(I F = 100 mAdc) — 1000
(I F = 200 mAdc) — 1250
Diode Capacitance C D— 5.0 pF
(V R = 0, f = 1.0 MHz)
Reverse Recovery T ime t rr —50ns
(I F = I R = 30mAdc, R L = 100 Ω)
1. FR–5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
BAS21LT1
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
3
CATHODE 1
ANODE