IRKT26-12 - International Rectifier

Parameters IRK.26 Units

IT(AV) or IF(AV)

@ 85°C

IO(RMS) (*) 60 A

ITSM @ 50Hz 400 A

IFSM @ 60Hz 420 A

I2t @ 50Hz 800 A2s

@ 60Hz 730 A2s

I2√t 8000 A2√s

VRRM range 400 to 1600 V

TSTG - 40 to 125 oC

TJ- 40 to125 oC

(*) As AC switch.

27 A

Major Ratings and Characteristics

27 A

ADD-A-pakTM GEN V Power Modules

THYRISTOR/ DIODE and

THYRISTOR/ THYRISTOR

IRK.26 SERIES

Bulletin I27130 rev. G 10/02

www.irf.com

Features

High Voltage

Industrial Standard Package

Thick Al metal die and double stick bonding

Thick copper baseplate

UL E78996 approved

3500VRMS isolating voltage

Mechanical Description

The Generation V of Add-A-pak module combine the

excellent thermal performance obtained by the usage of

Direct Bonded Copper substrate with superior

mechanical ruggedness, thanks to the insertion of a solid

Copper baseplate at the bottom side of the device.

The Cu baseplate allow an easier mounting on the

majority of heatsink with increased tolerance of surface

roughness and improve thermal spread.

The Generation V of AAP module is manufactured without

hard mold, eliminating in this way any possible direct

stress on the leads.

Benefits

Up to 1600V

Full compatible TO-240AA

High Surge capability

Easy Mounting on heatsink

Al203 DBC insulator

Heatsink grounded

Electrical Description

These modules are intended for general purpose

high voltage applications such as high voltage regu-

lated power supplies, lighting circuits, temperature

and motor speed control circuits, UPS and battery

charger.

The electrical terminals are secured against axial pull-out:

they are fixed to the module housing via a click-stop feature

already tested and proved as reliable on other IR modules.

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IRK.26 Series

Bulletin I27130 rev. G 10/02

www.irf.com

VRRM , maximum VRSM , maximum VDRM , max. repetitive IRRM

Voltage repetitive non-repetitive peak off-state voltage, IDRM

Code peak reverse voltage peak reverse voltage gate open circuit 125°C

-VVVmA

04 400 500 400

06 600 700 600

08 800 900 800

IRK.26 10 1000 1100 1000 15

12 1200 1300 1200

14 1400 1500 1400

16 1600 1700 1600

IT(AV) Max. average on-state

current (Thyristors) 27 180o conduction, half sine wave,

IF(AV) Max. average forward 27 TC = 85oC

current (Diodes)

IO(RMS)Max. continuous RMS

on-state current.

As AC switch

ITSM Max. peak, one cycle 400 t=10ms No voltage

or non-repetitive on-state 4 20 t=8.3ms reapplied

IFSM or forward current 335 t=10ms 100% VRRM

350 t=8.3ms reapplied

470 t=10ms TJ = 25oC,

490 t=8.3ms no voltage reapplied

I2t Max. I2t for fusing 800 t=10ms No voltage

730 t=8.3ms reapplied

560 t=10ms 100% VRRM

510 t=8.3ms reapplied

1100 t=10ms TJ = 25oC,

1000 t=8.3ms no voltage reapplied

I2√t Max. I2√t for fusing (1) 8000 A2√s t= 0.1 to 10ms, no voltage reappl. TJ =TJ max

VT(TO) Max. value of threshold 0.92 Low level (3)

voltage (2) 0.95 High level (4)

rtMax. value of on-state 12.11 Low level (3)

slope resistance (2) 11.82 High level (4)

VTM Max. peak on-state or ITM = π x IT(AV) TJ = 25oC

VFM forward voltage IFM = π x IF(AV)

di/dt Max. non-repetitive rate TJ = 25oC, from 0.67 VDRM,

of rise of turned on 150 A/µs ITM =π x IT(AV), Ig = 500mA,

current tr < 0.5 µs, tp > 6 µs

IHMax. holding current 200 TJ = 25oC, anode supply = 6V,

resistive load, gate open circuit

ILMax. latching current 400 TJ = 25oC, anode supply = 6V, resistive load

TJ = TJ max

Parameters IRK.26 Units Conditions

(1) I2t for time tx = I2√t x √tx(2) Average power = VT(TO) x IT(AV) + rt x (IT(RMS))2(3) 16.7% x π x IAV < I < π x IAV

(4) I > π x IAV

On-state Conduction

Initial TJ = TJ max.

A2s

mΩ

1.95 V

I(RMS) I(RMS)

ELECTRICAL SPECIFICATIONS

Voltage Ratings

Type number

Sinusoidal

half wave,

Initial TJ = TJ max.

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IRK.26 Series

Bulletin I27130 rev. G 10/02

www.irf.com

TJJunction operating

temperature range

Tstg Storage temp. range - 40 to 125

RthJC Max. internal thermal

resistance, junction 0.31 Per module, DC operation

to case

RthCS Typical thermal resistance

case to heatsink

T Mounting torque ± 10%

to heatsink

busbar 3

wt Approximate weight 110 (4) gr (oz)

Case style TO-240AA JEDEC

Thermal and Mechanical Specifications

Parameters IRK.26 Units Conditions

- 40 to 125

0.1

(5) Available with dv/dt = 1000V/µs, to complete code add S90 i.e. IRKT26/16AS90.

°C

K/W

Mounting surface flat, smooth and greased

IRRM Max. peak reverse and

IDRM off-state leakage current 15 mA TJ = 125oC, gate open circuit

at VRRM, VDRM

VINS RMS isolation voltage 2500 (1 min) V 50 Hz, circuit to base, all terminals

3500 (1 sec) shorted

dv/dt Max. critical rate of rise 500 V/µsT

J = 125oC, linear to 0.67 VDRM,

Triggering

Blocking

PGM Max. peak gate power 10

PG(AV) Max. average gate power 2.5

IGM Max. peak gate current 2.5 A

-VGM Max. peak negative

gate voltage

4.0 TJ = - 40°C

2.5 TJ = 25°C

1.7 TJ = 125°C

270 TJ = - 40°C

150 mA TJ = 25°C

80 TJ = 125°C

VGD Max. gate voltage

that will not trigger

IGD Max. gate current

that will not trigger

0.25 V

6mA

Anode supply = 6V

resistive load

VGT Max. gate voltage

required to trigger

Anode supply = 6V

resistive load

IGT Max. gate current

required to trigger

TJ = 125oC,

rated VDRM applied

TJ = 125oC,

rated VDRM applied

Parameters IRK. 26 Units Conditions

A mounting compound is recommended

and the torque should be rechecked after

a period of 3 hours to allow for the

spread of the compound

Sine half wave conduction Rect. wave conduction

Devices Units

180o120o90o60o30o180o120o90o60o30o

IRK.26 0.23 0.27 0.34 0.48 0.73 0.17 0.28 0.36 0.49 0.73 °C/W

∆R Conduction (per Junction)

(The following table shows the increment of thermal resistance RthJC when devices operate at different conduction angles than DC)

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IRK.26 Series

Bulletin I27130 rev. G 10/02

www.irf.com

IRK T 26 / 16 A S90

Device Code

12 3 45

Ordering Information Table

* * Available with no auxiliary cathode.

To specify change: 26 to 27

e.g. : IRKT27/16A etc.

IRK.27 types

With no auxiliary cathode

Outline Table

K2 G2

K1G1

(1)

(2)

(3)

(4) (5) (7) (6)

(1)

(2)

(3)

(4) (5)

(1)

(2)

(3)

(7)

(6)

Dimensions are in millimeters and [inches]

IRKT IRKH IRKL

NOTE: To order the Optional Hardware see Bulletin I27900

1- Module type

2- Circuit configuration (See Circuit Configuration table below)

3- Current code * *

4- Voltage code (See Voltage Ratings table)

5- A : Gen V

6- dv/dt code: S90 = dv/dt 1000 V/µs

No letter = dv/dt 500 Vµs

IRKN

(1)

(2)

(3)

(4) (5)

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IRK.26 Series

Bulletin I27130 rev. G 10/02

www.irf.com

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

100

110

120

130

0 5 10 15 20 25 30

Maximum Allowable Case Temperature ( °C)

30° 60° 90° 120° 180°

Average On-state Current (A)

Condu ct ion A ng le

IRK.26.. Series

R (DC) = 0.62 K/W

thJC

100

110

120

130

0 1020304050

30° 60° 90° 120°

180°

Av erage On-state Current (A)

Maximum Allow able Case Temperature (°C)

Con du c ti on Pe r iod

IRK.2 6 .. S eries

R (DC) = 0.62 K/W

thJC

Fig. 3 - On-state Power Loss Characteristics Fig. 4 - On-state Power Loss Characteristics

Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current

0 5 10 15 20 25 30

180°

120°

90°

60°

30°

RMS Limit

Con duc ti on A ng le

Maximum Average On-state Power Loss (W)

Average On-state Current (A)

IRK.26.. Series

Per Junction

T = 125°C

01020304050

180°

120°

90°

60°

30° RMS Limit

Conduction Period

Maximum Average On-state Power Loss (W)

A ver age On-st ate Curren t (A)

IRK.26.. Series

Per Junction

T = 125°C

150

200

250

300

350

400

1 10 100

Number Of Equal Amplitude H alf Cycle Current Pulses (N)

Peak H alf Sine Wave On-state Cur rent (A)

Initial T = 125°C

@ 60 Hz 0.0083 s

@ 50 Hz 0.0100 s

At Any Rated Load Condition And With

Rated V Applied Following Surge.

RRM

IRK.26.. Series

Per Junct ion

150

200

250

300

350

400

0.01 0.1 1

Pulse Tra i n Duration (s)

Versus Pulse Train Duration. Control

Peak Half Sine Wave On-state Current (A)

Initial T = 125°C

No Voltage Reapplied

Rated V Reapplied

RRM

Maximum Non Repetitive Surge Current

Of Conduction May Not Be Maintained.

IRK.26.. Series

Per Junction

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IRK.26 Series

Bulletin I27130 rev. G 10/02

www.irf.com

Fig. 9 - On-state Power Loss Characteristics

Fig. 8 - On-state Power Loss Characteristics

Fig. 7 - On-state Power Loss Characteristics

0 20 40 60 80 100 120 140

Maximum All owa ble Ambient Temp erature (°C)

1 K/W

1.5 K/W

2 K/W

R = 0.1 K/W - Delta R

thSA

0.3 K/W

0.5 K/W

4 K/W

0.7 K/W

3 K/W

8 K/W

100

10 20 30 40 50 60

180°

120°

90°

60°

30°

Total RMS Output Current (A)

Maximum Total On-state Power Loss (W)

Condu c tion Angle

IRK.26.. Series

Per Module

T = 125°C

0 20 40 60 80 100 120 140

Max imum Allo wable Ambie nt Temperatur e (°C)

1 K/W

1.5 K/W

0.2 K/W

0.3 K/W

0.5 K/W

0.7 K/W

3 K/W

8 K/W

R = 0.1 K/W - Delta R

thSA

100

150

200

250

0 102030405060

Total Outp ut Curr ent (A)

Maximum Total Power Loss (W)

180°

(Sine)

180°

(Rect)

2 x IRK.26.. Series

Single Phase Bridge

Connected

T = 125°C

0 20406080100120140

Maximum Allowable Ambient Temperatur e (°C)

R = 0.1 K/W - Delta R

thSA

0.2 K/W

0.3 K/W

0.5 K/W

0.7 K/W

1 K/W

1.5 K/W

3 K/W

0.4 K/W

100

150

200

250

300

350

0 1020304050607080

Total Outpu t Cur rent (A)

Maximum Total Power Loss (W)

120°

(Rect)

3 x IRK.26.. Series

Three Phas e Bridge

Connected

T = 125°C

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IRK.26 Series

Bulletin I27130 rev. G 10/02

www.irf.com

Fig. 10 - On-state Voltage Drop Characteristics

100

1000

01234567

T = 25°C

Instantaneous On-state Current (A)

Instantaneou s O n-sta te Voltage (V)

T = 125°C

IRK.26.. Series

Per Junction

Fig. 12- Gate Characteristics

Fig. 11 - Thermal Impedance ZthJC Characteristics

0.01

0.1

0.001 0.01 0.1 1 10

Square Wave Pulse Duration (s)

Steady State Value:

R = 0.62 K/W

(DC Operation)

thJC

Tra nsient Thermal Impeda nce Z (K/W)

IRK.26.. Series

0.1

100

0.001 0.01 0.1 1 10 100 1000

(b) (a)

Rec tangu lar gate pulse

(4) (3) (2) (1)

(1) PGM = 100 W, tp = 500 µs

(2) PG M = 50 W, tp = 1 ms

(3) PGM = 20 W, tp = 25 ms

(4) PG M = 10 W, tp = 5 ms

Instantaneous Gate Current (A)

Ins tantaneo us Ga te Vol tage (V)

TJ = -40 °C

TJ = 25 °C

TJ = 125 °C

a)Recomme nded load line f or

b)Recommen de d lo ad line for

VGD

IGD

Frequency Limited by PG(AV)

rated di/dt: 20 V, 30 ohms

tr = 0.5 µs, tp >= 6 µs

<= 30% rated di/dt: 20 V, 65 ohms

tr = 1 µ s, tp >= 6 µ s

IRK.26.. Series

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IRK.26 Series

Bulletin I27130 rev. G 10/02

www.irf.com

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105

TAC Fax: (310) 252-7309

Visit us at www.irf.com for sales contact information. 10/02

Data and specifications subject to change without notice.

This product has been designed and qualified for Industrial Level.

Qualification Standards can be found on IR's Web site.

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