z= ALPHA SEMICONDUCTOR Excellence in Analog Power Products 2N7000/BS170L N-Channel Enhancement-Mode MOS Transistor PRODUCT DESCRIPTION The ALPHA Semiconductor 2N7000 utilizes ALPHAs vertical DMOS technology. This device is well suited for switching applications where B, of 60V and low on resistance (under 5 ohms) are required. The 2N7000 is housed in a plastic TO-92 package. ORDERING INFORMATION Part Number T 2N7000N ~55C to +150C BS170LN -55C to +150C 2N7000K -55C to +150C PRODUCT SUMMARY V wrypss Tpscon) Ih Part Number (Vv) (Q) (A) 2N7000 60 5 0.2 BS170 60 5 0.5 Pin Connections TO-92 TO-92 2N7000 BSI70L 1 2 3 1 2 3 al Ll SOURCE DRAIN GATE DRAIN SOURCE GATE Bottom View Bottom View 10-5 2N7000/BS170L ABSOLUTE MAXIMUM RATINGS (T, = +25C, unless otherwise specified.) Parameter Conditions Limits 60 +40 Continuous Current A 0.2 0.13 Drain 0.5 4 0.16 -55 to 1 T -55 to 150 Lead T Thermal Resistance Limits Units Junction-to-Ambient 312.5 . K/W NOTE: 1. Pulse width limited by maximum junction temperature. SPECIFICATIONS Parameter Conditions STATIC Drain-Source =1 =0V Gate- vi =V, =ImA =+15V, =0V Zero Gate Vi Drain Current Vos = 48V, Ves = OV Te = 125C On-State Drain = 48V, Vo, = OV Drain-Source cs = 4.5V, lp = 75mA Veg = 10V, lp = 0.5A Te = 125C Drain-Source On-V os = 4.5V, lp = 75mMA Vg = 10V, 1p = 0.5A Ty = 125C Ti Vos = = Common Source = = DYNAMIC f=1 Reverse Transfer = = = [MHz Turn-On Time Vop = 15V, R, -25Q, 1p = O0.5A Veen = 10V, Rg = 252 (Switching time is essentially of Tum-Off Time Vop = 15V, R,- =0.5A Vogn = LOV, Rg = 25Q (Switching time is essentially of Notes: 1. T, = 25C unless otherwise specified 2. For design aid only, not subject to production testing. 3. Pulse test; PW = <300pS, duty cycle <3%. 4. This parameter not registered with JEDEC. 10-6