- 246 - LM358/A 2[HIrs, SSSR National Semiconductor ; CERN RE ORAEH LM358A LM358 Ht O@RHBEGH:+3~+300 ena eae 2 ; : c+ OTP TED: 500 1A ww RABE | 03-22 In v OUND <i> SOPRA TRE NE Tae25C BHANEE t8 V az2rC a BIE: 0~+ Vs-1. 5V . eit Hew | 0~+70 0~+70 c AMR |/ / a tay yok MO ih a 8 |e slat eeal eee aval ema l wo T1:LM358 | Ex: HA17356 GS:GL358 / RIW7OMEE [Vos | 2 3 2 t aV MOT:LM358 ESF :AN1958S/AN656 | =J2:LM358 VommerV7t | TC/Vos 7 20 7 7 ANC PHL: LM358/NE532 =H: LAG358 450 -MBA7I58 VoMRHRETE | Vos/time / / / / uW/A NEC: 42 PC358C = 36: M5223 pF" IR935S ATIWTRETE Ib 45 100 45 250 nA Woe: TATS358P ROHM: BA10358 AdMoMER | Tos 5 30 5 80 nA os TREE Vn / / / / LNVp-p Bev eRe Sonatas | en / / / / vA He (TOP VIEW) ADRS BTRE | in / l / / pa/./ Hz SATE Rin / / / / MQ BATHE Rint / / / / Ga ouT.a( | 8]V- MBA Daa | CM |0~ / o~ / v +Vs-1.5 tVs-1.5 -w.alth AY Z\ OUT.B mesh | CMRR| @ | 85 65 10 65 4B +IN.A BREA | PSRR| | 100 65 100 65 aB (3 6 J-IN.B HSE | Avo @ | 100 25 100 25 v/v nb fa | [5 ]+IN.B HERS Vo o~ / o~ / v +Vs-1.5 +Vs-1.5 LAE SR Zo / / / Q XS EL He Io | -20~+40 | -10~+20 | -20~+40 | -10~+20 | mA _ EL Is 0.7 12 0.7 1.2 aA -l-F SR / / / / Wus FST GBW / / / / Miz ee fT / / / / Miz AR-DAL tr / / / / ns EN Hb ts / / / / ns t1Ya-f os / / / / % BRAS DG / / / / % OUTPUT A OF | OUTPUT B epEeitt GD / / / / degree ny PBA SARS THD / / / / % INVERTING INVERTING SyRb- W-yay cs | 120 is 120 / 4B vor rwyerrind Ri-2k f=1k~20kiz @ at OC NON- INVERTING d at pc | @ RLa2k, + Vs=15V, OV | +Vs=+15V, OV LL