PD- 93762 IRF7807D2 FETKYTM MOSFET / SCHOTTKY DIODE * Co-Pack N-channel HEXFET Power MOSFET and Schottky Diode * Ideal for Synchronous Rectifiers in DC-DC Converters up to 5A Output * Low Conduction Losses * Low Switching Losses * Low Vf Schottky Rectifier 1 8 K/D A/S 2 7 K/D A/S 3 6 K/D G 4 5 K/D D A/S SO-8 Description The FETKYTM family of Co-Pack HEXFET MOSFETs and Schottky diodes offers the designer an innovative, board space saving solution for switching regulator and power management applications. HEXFET power MOSFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. Top View Device Features (Max Values) IRF7807D2 VDS RDS(on) Qg QSW Qoss 30V 25m 14nC 5.2nC 21.6nC The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO8 package is designed for vapor phase, infrared or wave soldering techniques. Absolute Maximum Ratings Parameter Symbol Max. Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 12 ID 8.3 Continuous Drain or Source 25C Current (VGS 4.5V) 70C Pulsed Drain Current Power Dissipation 25C 6.6 IDM 66 PD 2.5 70C Schottky and Body Diode 25C Average ForwardCurrent 70C Junction & Storage Temperature Range Thermal Resistance Parameter Maximum Junction-to-Ambient www.irf.com 1.6 IF (AV) 3.7 Units V A W A 2.3 TJ, TSTG -55 to 150 C RJA Max. 50 Units C/W 1 11/8/99 IRF7807D2 Electrical Characteristics Parameter Min Drain-to-Source Breakdown Voltage* V(BR)DSS Static Drain-Source on Resistance* RDS(on) Typ Max 30 17 Gate Threshold Voltage* VGS(th) 25 1.0 Units Conditions V VGS = 0V, ID = 250A m VGS = 4.5V, ID = 7A V VDS = VGS,ID = 250A Drain-Source Leakage Current* IDSS 90 7.2 A mA VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, Tj = 125C Gate-Source Leakage Current* Total Gate Charge Synch FET* Total Gate Charge Control FET* Pre-Vth Gate-Source Charge Post-Vth Gate-Source Charge Gate to Drain Charge Switch Charge* (Qgs2 + Qgd) IGSS +/- 100 nA VGS = +/-12V Qgsync 10.5 14 Qgcont 12 17 Qgs1 2.1 Qgs2 0.76 Qgd QSW 2.9 3.66 5.2 Output Charge* Qoss 17.6 21.6 Gate Resistance Rg 1.2 VDS<100mV, VGS = 5V, ID = 7A VDS= 16V, VGS = 5V, ID = 7A VDS = 16V, ID = 7A nC VDS = 16V, VGS = 0 Schottky Diode & Body Diode Ratings and Characteristics Parameter Diode Forward Voltage Min Typ VSD Reverse Recovery Time trr 36 Reverse Recovery Charge Forward Turn-On Time Qrr ton 41 * Max 0.54 0.43 Units Conditions V Tj = 25C, Is = 3A, VGS =0V Tj = 125C, Is = 3A, VGS =0V ns Tj = 25C, Is = 7.0A, VDS = 16V nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitive rating; pulse width limited by max. junction temperature. Pulse width 300 s; duty cycle 2%. When mounted on 1 inch square copper board, t < 10 sec. 50% Duty Cycle, Rectangular Devices are 100% tested to these parameters. 2 www.irf.com IRF7807D2 100 VGS TOP 4.5V 3.5V 3.0V BOTTOM 2.5V VGS 4.5V 3.5V 3.0V BOTTOM 2.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 100 2.5V 10 2.5V 10 380s PULSE WIDTH Tj = 25C 380s PULSE WIDTH Tj = 150C 1 1 0.1 1 0.1 10 1 VDS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 70 70 VGS TOP 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V 60 50 IS, Source-to-Drain Current (A) IS, Source-to-Drain Current (A) 10 VDS, Drain-to-Source Voltage (V) 40 30 20 0.0 V 10 380s PULSE WIDTH Tj = 25C VGS 4.5V 3.5V 3.0V 2.5V 2.0V BOTTOM 0.0V TOP 60 50 40 30 20 O.OV 10 380S PULSE WIDTH Tj = 150C 0 0 0 0.2 0.4 0.6 0.8 1 VSD, Source-to-Drain Voltage (V) Fig 3. Typical Reverse Output Characteristics www.irf.com 0 0.2 0.4 0.6 0.8 1 VSD, Source-to-Drain Voltage (V) Fig 4. Typical Reverse Output Characteristics 3 IRF7807D2 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 1600 1200 Ciss Coss 800 400 6 ID = 7.0A VGS, Gate-to-Source Voltage (V) 2000 VDS = 16V 4 2 Crss 0 0 1 10 100 0 VDS , Drain-to-Source Voltage (V) 8 12 QG, Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 2.0 100 ID = 7.0A ID, Drain-to-Source Current ( ) VGS = 4.5V 1.5 (Normalized) RDS(on) , Drain-to-Source On Resistance 4 1.0 0.5 T J = 150C VDS = 10V 380s PULSE WIDTH 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 T J, Junction Temperature (C ) Fig 7. Normalized On-Resistance Vs. Temperature 4 T J = 25C 2.5 3.0 3.5 VGS, Gate-to-Source Voltage (V) Fig 8. Typical Transfer Characteristics www.irf.com 0.024 R DS (on) , Drain-to-Source On Resistance( ) 0.05 0.04 0.03 ID = 7.0A 0.02 0.01 2.0 4.0 6.0 8.0 10.0 0.022 VGS = 4.5V 0.020 VGS = 10V 0.018 0.016 0 20 40 60 80 I D , Drain Current (A) VGS, Gate -to -Source Voltage (V) Fig 10. On-Resistance Vs. Drain Current Fig 9. On-Resistance Vs. Gate Voltage 100 Thermal Response (Z thJA ) RDS(on) , Drain-to -Source On Resistance ( ) IRF7807D2 D = 0.50 10 0.20 0.10 0.05 0.02 0.01 1 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 0.1 0.001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.01 0.1 1 10 100 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (MOSFET) www.irf.com 5 IRF7807D2 Mosfet, Body Diode & Schottky Diode Characteristics 100 100 Reverse Current - I R ( mA ) Tj = 150C Tj = 125C Instantaneous Forward Current - I F ( A ) Tj = 25C 10 10 125C 100C 1 75C 0.1 50C 0.01 25C 0.001 0 5 10 15 20 25 30 Reverse Voltage - VR (V) Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 Forward Voltage Drop - V SD ( V ) Fig. 12 - Typical Forward Voltage Drop Characteristics 6 www.irf.com IRF7807D2 SO-8 Package Details Part Marking www.irf.com 7 IRF7807D2 Tape and Reel T E R M IN A L N U M B E R 1 12 .3 ( .48 4 ) 11 .7 ( .46 1 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N NOTES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E TE R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1. 33 0.00 (12 .9 92 ) MAX. 14 .4 0 ( .5 66 ) 12 .4 0 ( .4 88 ) NO TES : 1. C O N T R O LL IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -48 1 & E IA -54 1. WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 11/99 8 www.irf.com