2N3436 2N3437 2N3438 iconix n-channel JFETs designed for... = Small-Signal Amplifiers BENEFITS Operates from High Supply & Switches Voltages BVcss > 50 V TO-18 See Section 7 *ABSOLUTE MAXIMUM RATINGS (25C) Gate-Drain or Gate-Source Voltage (Note 1) ........ -50V Gate Current 0.0.0.0... ccc cee eee 1OmA Total Device Dissipation at (or below) 25C 6 Free-Air Temperature (Note 2) .......... 300 mW ee Storage Temperature Range.............. -65 to +200C s D s *ELECTRICAL CHARACTERISTICS (25C unless ss Performance Curves NP See Section 5 otherwise noted) co 2N3436 2N3437 2N3438 Characteristic Unit Test Conditions Min Max Min Max Min Max 1 \ Gate R c -0.5 -0.5 -0.5 nA Vv 30 V,V 0 ate Reverse Current =H = Ca. 2 GSS -1.0 -1.0 -1.0 BA SS Ds 150 C Gate-Source Breakd 3 s BVgss Valnass urce Breakdown 60 -50 -50 Vv IG =-1HA, Vps=0 4 T | Drain Cutoff C "0 " 10) 8 | pg =20V.V () Dloff rain Cutoff Current = = ! toff (-10.0) (-5.0) (-2.5) (v} bs Ss 1 5} | Vastory Yauco? Cuter -9.8 -48 23) V | Vps=20V,Ip=1HA 6 toss Saturation Drain Current 3.0 15.0 0.8 4.0 6.2 1.0] mA # Vps*20V, Ves =0 7\ | gs Common Source Forward! 2500 | 10,000] 1500 | 6000 | 800 | 4500 Vps = 20 V, Vgg =0 =1kHz 4 EMho Common-Source Output 8 D Soss Conductance 36 20 5 x Vos = 30 V, Vas= 0 9] A] Coss Common-Source Output 6 6 6 pF M Capacitance f=1MH2 aT I c 18 18 18) pF Common-Source Input _ _ 10 C; apaci Ves =0V,Vos=( ) (ss Capacitance (10) (6} (4) Vv) Vos = = 11 NF Noise Figure 2| 2 2 dB DS=10V,Vas=0, f= 1kHz Rgen = 1 meg, BW = 6 Hz *JEDEC Registered Data. NP NOTES: 1. Due to symmetrical geometry, these units may be operated with source an 2. Derate linearly to 200C free-air temperature at rate of 1.7 mw/C. id drain leads interchanged. 1979 Siliconix incorporated 3-6