AEDS-9300
Transmissive Photointerrupter
Data Sheet
Description
The photointerrupter consists of a Gallium Arsenide
infrared light emitting diode and a NPN silicon
phototransistor built in a black plastic housing. It is a
transmissive subminiature photointerrupter.
Figure 1: Illustrates Basic Configuration of Photointerrupter
Features
••
••
•Non-Contact Sensing
••
••
•Infra-Red Wavelength
••
••
•Fast Switching Speed
••
••
•Mounting Guide Pins
••
••
•RoHS Compliant
••
••
•-25 °C to +85 °C Operating Temp.
Applications
••
••
•Optical Switch
••
••
•ATM Machines
••
••
•Vending Machines
••
••
•Edge, Position Detections
••
••
•Office Automation Equipments
Input VCC
Output
RL
2
Figure 4: Periodical Output signal could be used to determine
the Motor Spinning Speed and Rotation positioning.
Theory of Operation
The photo-interrupter consists of an Infrared light
source and a photo-diode in a single Dual-in-Line
package. The photo-interrupter could be mounted onto
a PC board with a current-limiting resistor in series
externally with the Infrared Emitting Diode. With this,
such input voltage for the emitting diode could share
the same voltage level as VCC.
Regarding the photo-interrupter output, there will
always be current output measured but with the
external resistor, RL connected as shown in Figure1,
analog voltage output could then be obtained.
0
-+
0
+
-
X-Direction
Y-Direction
Figure 2: Illustrates Photo-Interrupter Positioning Sensing
Characteristics. Obstacles (Slots) could interrupt along X-axis or
Y-axis
Figure 3: Response Time Measurement of Output Signal.
Output
With both the infrared light source and the photo diode
in a single package, the photo-interrupter employs
transmissive technology to sense obstacles existence,
acts as on / off switchers or even to sense low-
resolution rotary or linear motions. The photo-
interrupter is specified for operation over -25 °C to
+85 ºC temperature range.
As a basic switcher, the photo-interrupter would have
a position detecting characteristics as shown in Figure
2. These characteristic diagrams give the relationship
between Relative Light Current, IL and Distance of
displacement, d. Note that the slot (obstacle)
introduced in between the emitting diode and the
photo-diode could applied in two directions. One is of
X-axis and another would be of Y-axis.
Therefore, with the presence of slot, the photo-
interrupter would actually give a low logic output. Vice
versa, the photo-interrupter will provide a high logic
output without the existence of the slot. Refer to Figure
3. Typically, Rise Time, tr and Fall Time tf will have the
same value, 15µs.
With special design of the slots, periodic presence and
absence could be generated. Such output signal is
useful in determining low-resolution (>0.5mm pitch)
motor rotation positioning and motor spinning speed.
Sensing Position Characteristics
(Typical)
0
50
100
-3 -2 -1 0 1 2 3 -3 -2 -1 0 1 2 3
Relative Light Current IL (%)
Distance d (mm)
Y
X
IF=20mA
VCE =5V
Ta=25 oC
IF=20mA
VCE =5V
Ta=25 oC
Input
Output
90 %
10 %
tr tf
t
t
3
Absolute Maximum Ratings @ TA=25°°
°°
°C
Optical-Electrical Characteristics TA=25°C
Parameter Maximum Rating Unit
Reverse voltage 5 V
Forward current 50 mA
Forward surge current (10µs pulse) 1 A
Collector Emitter voltage 30 V
Emitter Collector voltage 5 V
Power dissipation 175 mW
Operation temperature range -25°C to 85°C
Storage temperature range -40°C to 85°C
Soldering temperature 260°C for 5 seconds
Parameter Symbol Min. Typ. Max. Unit Test Conditions
Forward voltage VF-1.21.35VI
F=20mA
Collector Current IC0.8 - 10 mA IF=20mA, Vce = 5V
Collector Emitter voltage VCEO 30 - - V Ie=0.1mA, Ee=0mW/cm2
Emitter Collector voltage VECO 5-- VI
e=0.1mA, Ee=0mW/cm2
Collector dark current ICEO --100nAV
CE=10V, Ee=0mW/cm2
Collector Emitter saturation voltage VCE(SAT) --0.4VI
e=0.5mA, Ee=0.1mW/cm2
Rising time Tr-15-µsV
CE=5V, RL=1kΩ, IC=1mA
Falling time Tf-15-µs
4
Outline Drawing
Units in mm
5
Typical Optical-Electrical Curves
Figure 5: Collector Dark Current Vs Ambient Temperature Figure 6: Normalized Collector Current Vs Ambient
Temperature
Figure 7: Rise and Fall Times Vs Load Resistance Figure 8: Relative Collector Current Vs Irradiance
Figure 9: Forward Current Vs Forward Voltage
0
20
40
60
80
100
0 1.2 1.6 2.0 2.4 2.8
Forward Voltage (V)
Forward Current (mA)
0.001
0.01
0.1
1
10
100
1000
0 40 80 120
TA
- Ambient Temperature -
oC
ICEO-Collector Dark Current-µA
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
-75 -25 25 75 125
TA
- Ambient Temperature - oC
IC-Normalized Collector Current
Vce =5 V
Ee =0.1 mW/cm 2
@ l = 940 nm
0
40
80
120
160
200
0246810
RL - Load Resistance - KΩ
Tr Tf Rise and Fall Time - uS
Vcc = 5 V
VRL = 1 V
F = 100 Hz
PW = 1 ms
0
1
2
3
4
5
0123456
Ee - Irradiance - mW/cm
2
Relative Collector Current
Vce = 5 V
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Data subject to change. Copyright © 2006 Avago Technologies Pte. All rights reserved.
AV01-0363EN - August 21, 2006
