TECHNICAL DATA
LOW POWER PNP SILICON TRANSISTOR
Qualified per MIL-PRF-19500/177
Devices Qualified Level
2N1131
2N1131L 2N1132
2N1132L
JAN
JANTX
MAXIMUM RATINGS
Ratings Symbol All Units Units
Collector-Emitter Voltage VCEO 40 Vdc
Collector-Base Voltage VCBO 50 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Collector Current IC 600 mAdc
Total Power Dissipation @ TA = +250C(1)
@ TC = +250C(2) PT 0.6
2.0 W
W
Operating & Storage Temperature Range Top, Tj -65 to +200 °C
1) Derate linearly 3.4 mW/0C for TA ≥ +250C
2) Derate linearly 11.4 mW/0C for TC ≥ +250C
TO-39*
2N1131, 2N1132
TO-5*
2N1311L, 2N1312L
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 10 mAdc V(BR)CEO 40 Vdc
Collector-Base Breakdown Voltage
IC = 10 µAdc V(BR)CBO 50 Vdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc IEBO 100 µAdc
Collector-Emitter Cutoff Current
VCE = 50 Vdc, RBE ≤ 10 ohms ICER
10 mAdc
Collector-Base Cutoff Current
VCB = 50 Vdc
VCB = 30 Vdc ICBO 10
1.0 µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803 120
101
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2N1131, 2N1132 JAN, JANTX
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward Current Transfer Ratio
IC = 150 mAdc, VCE = 10 Vdc 2N1131, L
2N1132, L
IC = 5.0 mAdc, VCE = 10 Vdc 2N1131, L
2N1132, L
hFE 20
30
15
25
45
90
Collector-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc VCE(sat) 1.3 Vdc
Base-Emitter Saturation Voltage
IC = 150 mAdc, IB = 15 mAdc VBE(sat)
1.5 Vdc
DYNAMIC CHARACTERISTICS
Small-Signal Short Circuit Forward-Current Transfer Ratio
IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1 kHz 2N1131, L
2N1132, L
IC = 5.0 mAdc, VCE = 10 Vdc, f = 1 kHz
2N1131, L
2N1
132, L
hfe 15
30
20
30
50
90
Small-Signal Open-Circuit Output Admittance
IC = 1.0 mAdc, VCE = 5.0 Vdc
IC = 5.0 mAdc, VCE = 10 Vdc
hob 1.0
5.0 µmho
Small-Signal Short-Circuit Input Impedance
IC = 1.0 mAdc, VCE = 5.0 Vdc
IC = 5.0 mAdc, VCE = 10 Vdc
hib
25
35
10 Ω
Magnitude of Common Emitter Small-Signal Short Circuit
Forward-Current Transfer Ratio
IC = 50 mAdc, VCE = 10 Vdc, f = 20 MHz 2N1131, L
2N1132, L
hfe 2.5
3.0 20
20
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 45 pF
Input Capacitance
VEB = 0.5 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz Cibo 80 pF
SWITCHING CHARACTERISTICS
Turn-On Time + Turn-Off Time
(See figure 2 of MIL-PRF-19500/177) ton + toff 50 ηs
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
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