2CGH55015 Rev 2.0 Preliminary
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/wireless
Copyright © 2008-2009 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and
the Cree logo are registered trademarks of Cree, Inc.
Absolute Maximum Ratings (not simultaneous) at 25˚C Case Temperature
Parameter Symbol Rating Units
Drain-Source Voltage VDSS 84 Volts
Gate-to-Source Voltage VGS -10, +2 Volts
Power Dissipation PDISS 7 Watts
Storage Temperature TSTG -55, +150 ˚C
Operating Junction Temperature TJ225 ˚C
Maximum Forward Gate Current IGMAX 4.0 mA
Soldering Temperature1TS245 ˚C
Screw Torque τ60 in-oz
Thermal Resistance, Junction to Case2RθJC 8.0 ˚C/W
Case Operating Temperature2TC-40, +105 ˚C
Note:
1 Refer to the Application Note on soldering at www.cree.com/products/wireless_appnotes.asp
2 Measured for the CGH55015F at PDISS = 7W.
Electrical Characteristics (TC = 25˚C)
Characteristics Symbol Min. Typ. Max. Units Conditions
DC Characteristics1
Gate Threshold Voltage VGS(th) -3.8 -3.3 -2.3 VDC VDS = 10 V, ID = 3.6 mA
Gate Quiescent Voltage VGS(Q) –-3.0 –VDC VDS = 28 V, ID = 115 mA
Saturated Drain Current IDS 2.9 3.5 –A VDS = 6.0 V, VGS = 2.0 V
Drain-Source Breakdown Voltage VBR 84 100 – VDC VGS = -8 V, ID = 3.6 mA
RF Characteristics2,3 (TC = 25˚C, F0 = 5.65 GHz unless otherwise noted)
Small Signal Gain GSS 8.5 11.0 - dB VDD = 28 V, IDQ = 115 mA
Drain Efciency4η20.6 25 – % VDD = 28 V, IDQ = 115 mA, PAVE = 2.0 W
Back-Off Error Vector Magnitude EVM1–2.5 - % VDD = 28 V, IDQ = 115 mA,
PAVE = 23 dBm
Error Vector Magnitude EVM2–2.0 - % VDD = 28 V, IDQ = 115 mA, PAVE = 2.0 W
Output Mismatch Stress VSWR - 10 : 1 - Y
No damage at all phase angles,
VDD = 28 V, IDQ = 115 mA,
PAVE = 2.0 W
Dynamic Characteristics
Input Capacitance CGS –5.00 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Output Capacitance CDS –1.32 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Feedback Capacitance CGD –0.43 – pF VDS = 28 V, Vgs = -8 V, f = 1 MHz
Notes:
1 Measured on wafer prior to packaging.
2 Measured in the CGH55015F-TB test xture.
3 Under 802.16 OFDM, 3.5 MHz Channel BW, 1/4 Cyclic Prex, 64 QAM Modulated Burst, 5 ms Burst, Symbol Length of
59, Coding Type RS-CC, Coding Rate Type 2/3, PAR = 9.8 dB @ 0.01 % Probability on CCDF.
4 Drain Efciency = POUT / PDC.