ISL9R1560PF2 15 A, 600 V, STEALTH Diode Description The ISL9R1560PF2 is a STEALTH diode optimized for low loss performance in high frequency hard switched applications. The STEALTH family exhibits low reverse recovery current (IRR) and exceptionally soft recovery under typical operating conditions. This device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low IRR and short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. www.onsemi.com Features * * * * * TO-220F 2 LEAD CASE 221AS Stealth Recovery, trr = 29.4 ns (@ IF = 15 A) Max. Forward Voltage, VF = 2.2 V (@ TC = 25C) 600 V Reverse Voltage and High Reliability Avalanche Energy Rated These Devices are Pb-Free and are RoHS Compliant MARKING DIAGRAM Applications * * * * * R1560 PF2 Hard Switched PFC Boost Diode UPS Free Wheeling Diode Motor Drive FWD SMPS FWD Snubber Diode ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol Value Unit Repetitive Peak Reverse Voltage VRRM 600 V Working Peak Reverse Voltage VRWM 600 V VR 600 V Average Rectified Forward Current (TC = 25C) IF(AV) 15 A Repetitive Peak Surge Current (20 kHz Square Wave) IFRM 30 A Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60 Hz) IFSM 200 A PD 37 W EAVL 20 mJ TJ, TSTG -55 to 175 C TL 300 C DC Blocking Voltage Power Dissipation Avalanche Energy (1 A, 40 mH) Operating and Storage Temperature Range Maximum Temperature for Soldering Leads at 0.063 in (1.6 mm) from Case for 10s R1560PF2 = Specific Device Marking 1. Cathode 2. Anode ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. (c) Semiconductor Components Industries, LLC, 2007 December, 2017 - Rev. 2 1 Publication Order Number: ISL9R1560PF2/D ISL9R1560PF2 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Tape Width Quantity ISL9R1560PF2 R1560PF2 TO-220F-2L N/A 50 Units ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit VR = 600 V, TC = 25C - - 100 mA VR = 600 V, TC = 125C - - 1.0 mA IF = 15 A, TC = 25C - 1.8 2.2 V IF = 15 A, TC = 125C - 1.65 2.0 V IF = 0 A, VR = 10 V - 62 - pF IF = 1 A, dIF/dt = 100 A/ms, VR = 30 V - 25 30 ns IF = 15 A, dIF/dt = 100 A/ms, VR = 30 V - 35 40 ns IF = 15 A, dIF/dt = 200 A/ms, VR = 390 V, TC = 25C - 29.4 - ns - 3.5 - A - 57 - nC - 90 - ns OFF STATE CHARACTERISTICS IR Instantaneous Reverse Current ON STATE CHARACTERISTICS VF Instantaneous Forward Voltage DYNAMIC CHARACTERISTICS CJ Junction Capacitance SWITCHING CHARACTERISTICS trr Reverse Recovery Time trr Reverse Recovery Time Irr Maximum Reverse Recovery Current Qrr Reverse Recovered Charge trr Reverse Recovery Time IF = 15 A, dIF/dt = 200 A/ms, VR = 390 V, TC = 125C S Softness Factor (tb/ta) - 2.0 - Irr Maximum Reverse Recovery Current - 5.0 - A Qrr Reverse Recovered Charge - 275 - nC trr Reverse Recovery Time - 52 - ns S Softness Factor (tb/ta) - 1.36 - Irr Maximum Reverse Recovery Current - 13.5 - A Qrr Reverse Recovered Charge - 390 - nC Maximum di/dt during tb - 800 - A/ms - - 4.1 C/W - - 70 C/W dIM/dt IF = 15 A, dIF/dt = 800 A/ms, VR = 390 V, TC = 125C THERMAL CHARACTERISTICS RqJC Thermal Resistance Junction to Case RqJA Thermal Resistance Junction to Ambient TO-247 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 ISL9R1560PF2 TYPICAL PERFORMANCE CHARACTERISTICS 4000 30 175oC 1000 IR, REVERSE CURRENT (mA) IF, FORWARD CURRENT (A) 25 175oC 150oC 20 25oC 125oC 15 100oC 10 150oC 125oC 100 100oC 75oC 10 1 5 25oC 0 0.5 0.1 0.75 1.0 1.25 1.5 1.75 2.0 100 2.25 500 600 Figure 2. Reverse Current vs. Reverse Voltage 100 100 VR = 390V, TJ = 1255C 80 V R = 390V, TJ = 1255C t b AT I F = 30A, 15A, 7.5A 80 t b AT dI F/dt = 200A/ms, 500A/ms, 800A/ms t, RECOVERY TIMES (ns) t, RECOVERY TIMES (ns) 400 VR , REVERSE VOLTAGE (V) Figure 1. Forward Current vs. Forward Voltage 60 40 60 40 20 20 t a AT dIF/dt = 200A/ms, 500A/ms, 800A/ms t a AT I F = 30A, 15A, 7.5A 0 0 5 10 15 20 25 0 200 30 400 IF, FORWARD CURRENT (A) 600 800 1000 1200 1400 1600 dI F /dt, CURRENT RATE OF CHANGE (A/ms) Figure 3. ta and tb Curves vs. Forward Current Figure 4. ta and tb Curves vs. dIF/dt 25 16 IRR, MAX REVERSE RECOVERY CURRENT (A) IRR, MAX REVERSE RECOVERY CURRENT (A) 300 200 VF, FORWARD VOLTAGE (V) dIF/dt = 800A/ms VR = 390V, TJ = 1255C 14 12 dI F/dt = 500A/ms 10 8 dIF/dt = 200A/ms 6 4 2 0 5 10 15 20 25 VR = 390V, TJ = 1255C IF = 30A 20 I F = 15A 15 I F = 7.5A 10 5 0 200 30 IF, FORWARD CURRENT (A) 400 600 800 1000 1200 1400 1600 dI F /dt, CURRENT RATE OF CHANGE (A/ms) Figure 6. Maximum Reverse Recovery Current vs. dIF/dt Figure 5. Maximum Reverse Recovery Current vs. Forward Current www.onsemi.com 3 ISL9R1560PF2 TYPICAL PERFORMANCE CHARACTERISTICS 700 QRR, REVERSE RECOVERED CHARGE (nC) S, REVERSE RECOVERY SOFTNESS FACTOR 2.5 V R = 390V, TJ = 1255C I F = 30A 2.0 IF = 15A 1.5 IF = 7.5A 1.0 0.5 200 400 600 800 1000 1200 1400 VR = 390V, TJ = 1255C I F = 30A 600 500 I F = 15A 400 I F = 7.5A 300 200 1600 200 dIF /dt, CURRENT RATE OF CHANGE (A/ms) 600 800 1000 1200 1400 1600 dI F /dt, CURRENT RATE OF CHANGE (A/s) Figure 7. Reverse Recovery Softness Factor vs. dIF/dt Figure 8. Reverse Recovered Charge vs. dIF/dt IF(AV), AVERAGE FORWARD CURRENT (A) 1200 CJ , JUNCTION CAPACITANCE (pF) 400 1000 800 600 400 200 0 0.1 1 10 100 TC, CASE TEMPERATURE (oC) VR , REVERSE VOLTAGE (V) Figure 9. Junction Capacitance vs. Reverse Voltage Figure 10. DC Current Derating Curve 2.0 Z JA, NORMALIZED THERMAL IMPEDANCE 1.0 0.1 DUTY CYCLE - DESCENDING ORDER 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 NOTES: DUTY FACTOR: D = t1/t2 SINGLE PULSE PEAK TJ = PDM x ZJA x RJA + TA 0.001 10-5 10-4 10-3 10-2 10-1 100 t, RECTANGULAR PULSE DURATION (s) Figure 11. Normalized Maximum Transient Thermal Impedance www.onsemi.com 4 101 ISL9R1560PF2 TEST CIRCUIT AND WAVEFORMS VGE AMPLITUDE AND RG CONTROL dI F/dt t1 AND t2 CONTROL I F L IF DUT RG CURRENT SENSE dIF trr dt ta tb 0 + 0.25 I RM VDD VGE - MOSFET t1 I RM t2 Figure 12. Test Circuit Figure 13. trr Waveforms and Definitions I = 1A L = 40mH R < 0.1W V DD = 50V EAVL = 1/2LI 2[V R(AVL)/(VR(AVL) - V DD )] Q1 = IGBT (BV CES > DUT V R(AVL)) VAVL LR CURRENT SENSE + VDD IL Q1 VDD DUT IL IV - t0 Figure 14. Avalanche Energy Test Circuit t1 t2 t Figure 15. Avalanche Current and Voltage Waveforms www.onsemi.com 5 ISL9R1560PF2 PACKAGE DIMENSIONS TO-220 Fullpack, 2-Lead / TO-220F-2FS CASE 221AS ISSUE O www.onsemi.com 6 ISL9R1560PF2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor's product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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