© Semiconductor Components Industries, LLC, 2007
December, 2017 − Rev. 2 1Publication Order Number:
ISL9R1560PF2/D
ISL9R1560PF2
15 A, 600 V, STEALTH Diode
Description
The ISL9R1560PF2 is a STEALTH diode optimized for low loss
performance in high frequency hard switched applications. The
STEALTH family exhibits low reverse recovery current (IRR) and
exceptionally soft recovery under typical operating conditions. This
device is intended for use as a free wheeling or boost diode in power
supplies and other power switching applications. The low IRR and
short ta phase reduce loss in switching transistors. The soft recovery
minimizes ringing, expanding the range of conditions under which the
diode may be operated without the use of additional snubber circuitry.
Consider using the STEALTH diode with an SMPS IGBT to provide
the most efficient and highest power density design at lower cost.
Features
•Stealth Recovery, trr = 29.4 ns (@ IF = 15 A)
•Max. Forward Voltage, VF = 2.2 V (@ TC = 25°C)
•600 V Reverse Voltage and High Reliability
•Avalanche Energy Rated
•These Devices are Pb−Free and are RoHS Compliant
Applications
•Hard Switched PFC Boost Diode
•UPS Free Wheeling Diode
•Motor Drive FWD
•SMPS FWD
•Snubber Diode
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
Repetitive Peak Reverse Voltage VRRM 600 V
Working Peak Reverse Voltage VRWM 600 V
DC Blocking Voltage VR600 V
Average Rectified Forward Current
(TC = 25°C) IF(AV) 15 A
Repetitive Peak Surge Current
(20 kHz Square Wave) IFRM 30 A
Nonrepetitive Peak Surge Current
(Halfwave 1 Phase 60 Hz) IFSM 200 A
Power Dissipation PD37 W
Avalanche Energy (1 A, 40 mH) EAVL 20 mJ
Operating and Storage Temperature
Range TJ, TSTG −55 to
175 °C
Maximum Temperature for Soldering
Leads at 0.063 in (1.6 mm) from Case
for 10s
TL300 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
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TO−220F
2 LEAD
CASE 221AS
MARKING DIAGRAM
R1560
PF2
R1560PF2 = Specific Device Marking
1. Cathode 2. Anode
See detailed ordering and shipping information on page 2 o
f
this data sheet.
ORDERING INFORMATION
ISL9R1560PF2
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2
PACKAGE MARKING AND ORDERING INFORMATION
Part Number Top Marking Package Tape Width Quantity
ISL9R1560PF2 R1560PF2 TO−220F−2L N/A 50 Units
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol Parameter Test Conditions Min Typ Max Unit
OFF STATE CHARACTERISTICS
IRInstantaneous Reverse Current VR = 600 V, TC = 25°C − − 100 mA
VR = 600 V, TC = 125°C − − 1.0 mA
ON STATE CHARACTERISTICS
VFInstantaneous Forward Voltage IF = 15 A, TC = 25°C − 1.8 2.2 V
IF = 15 A, TC = 125°C − 1.65 2.0 V
DYNAMIC CHARACTERISTICS
CJJunction Capacitance IF = 0 A, VR = 10 V − 62 − pF
SWITCHING CHARACTERISTICS
trr Reverse Recovery Time IF = 1 A, dIF/dt = 100 A/ms,
VR = 30 V − 25 30 ns
IF = 15 A, dIF/dt = 100 A/ms,
VR = 30 V − 35 40 ns
trr Reverse Recovery Time IF = 15 A,
dIF/dt = 200 A/ms,
VR = 390 V, TC = 25°C
− 29.4 − ns
Irr Maximum Reverse Recovery Current − 3.5 − A
Qrr Reverse Recovered Charge − 57 − nC
trr Reverse Recovery Time IF = 15 A,
dIF/dt = 200 A/ms,
VR = 390 V, TC = 125°C
− 90 − ns
SSoftness Factor (tb/ta) − 2.0 −
Irr Maximum Reverse Recovery Current − 5.0 − A
Qrr Reverse Recovered Charge − 275 − nC
trr Reverse Recovery Time IF = 15 A,
dIF/dt = 800 A/ms,
VR = 390 V, TC = 125°C
− 52 − ns
SSoftness Factor (tb/ta) − 1.36 −
Irr Maximum Reverse Recovery Current − 13.5 − A
Qrr Reverse Recovered Charge − 390 − nC
dIM/dt Maximum di/dt during tb− 800 − A/ms
THERMAL CHARACTERISTICS
RqJC Thermal Resistance Junction to Case − − 4.1 °C/W
RqJA Thermal Resistance Junction to Ambient TO−247 − − 70 °C/W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ISL9R1560PF2
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3
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 1. Forward Current vs. Forward Voltage Figure 2. Reverse Current vs. Reverse Voltage
Figure 3. ta and tb Curves vs. Forward Current Figure 4. ta and tb Curves vs. dIF/dt
Figure 5. Maximum Reverse Recovery Current vs.
Forward Current Figure 6. Maximum Reverse Recovery Current vs. dIF/dt
VF, FORWARD VOLTAGE (V)
IF, FORWARD CURRENT (A)
30
25
20
00.5 1.0 1.25 2.0 2.25
175oC
25oC
100oC
125oC
150oC
15
10
5
0.75 1.5 1.75
10
VR, REVERSE VOLTAGE (V)
IR, REVERSE CURRENT (mA)
100
100 200 500 600400
1000
1
0.1
175oC
25oC
100oC
300
4000
75oC
150oC
125oC
IF, FORWARD CURRENT (A)
0
0
20
40
60
80
100
10 30
t, RECOVERY TIMES (ns)
tb AT dIF/dt = 200A/ms, 500A/ms, 800A/ms
VR = 390V, TJ = 1255C
5152025
ta AT dIF/dt = 200A/ms, 500A/ms, 800A/ms
dIF/dt, CURRENT RATE OF CHANGE (A/ms)
0
20
40
60
80
100
t, RECOVERY TIMES (ns)
VR
= 390V, TJ = 1255C
tb AT I F = 30A, 15A, 7.5A
1000 16001400400200 600 800 1200
ta
AT IF = 30A, 15A, 7.5A
IF, FORWARD CURRENT (A)
2
6
8
10
12
14
16
IRR, MAX REVERSE RECOVERY CURRENT (A)
dIF/dt = 800A/ms
dIF/dt = 500A/ms
dIF/dt = 200A/ms
VR = 390V, TJ = 1255C
010 305 152025
4
dIF/dt, CURRENT RATE OF CHANGE (A/ms)
0
5
10
15
20
25
1000 1600
VR = 390V, TJ = 1255CIF = 30A
IF = 7.5A
IF = 15A
1400400200 600 800 1200
IRR, MAX REVERSE RECOVERY CURRENT (A)
ISL9R1560PF2
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4
TYPICAL PERFORMANCE CHARACTERISTICS
Figure 7. Reverse Recovery Softness Factor vs. dIF/dt Figure 8. Reverse Recovered Charge vs. dIF/dt
Figure 9. Junction Capacitance vs. Reverse Voltage Figure 10. DC Current Derating Curve
Figure 11. Normalized Maximum Transient Thermal Impedance
dIF/dt, CURRENT RATE OF CHANGE (A/ms)
0.5
1.0
1.5
2.0
2.5 VR = 390V, TJ
= 1255C
IF = 30A
IF = 15A
IF = 7.5A
S, REVERSE RECOVERY SOFTNESS FACTOR
1000 16001400400200 600 800 1200
dIF/dt, CURRENT RATE OF CHANGE (A/µ
s)
200
300
400
500
600
700 VR = 390V, TJ = 1255C
IF = 30A
IF = 15A
IF = 7.5A
QRR, REVERSE RECOVERED CHARGE (nC)
1000 16001400400200 600 800 1200
400
0
800
600
200
1200
VR, REVERSE VOLTAGE (V)
CJ, JUNCTION CAPACITANCE (pF)
0.1 1 10010
1000
TC, CASE TEMPERATURE (oC)
IF(AV)
, AVERAGE FORWARD CURRENT (A)
t, RECTANGULAR PULSE DURATION (s)
10−5 10−2 10−1
ZθJA, NORMALIZED
THERMAL IMPEDANCE
0.01
10−4 10−3
SINGLE PULSE
100
0.1
101
DUTY CYCLE − DESCENDING ORDER
0.5
0.2
0.1
0.05
0.01
0.02
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
PDM
t1
t2
1.0
2.0
0.001
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TEST CIRCUIT AND WAVEFORMS
Figure 12. Test Circuit Figure 13. trr Waveforms and Definitions
Figure 14. Avalanche Energy Test Circuit Figure 15. Avalanche Current and Voltage
Waveforms
RG
L
VDD
MOSFET
CURRENT
SENSE
DUT
VGE t1
t2
VGE AMPLITUDE AND
t1 ANDt2CONTROL I F
RG CONTROL dIF/dt
+
−
dt
dIF
IFtrr
tatb
0
IRM
0.25 I RM
DUT
CURRENT
SENSE +
LR
VDD
R < 0.1W
EAVL = 1/2LI2
[VR(AVL)/(VR(AVL) − VDD
1= IGBT (BVCES > DUT VR(AVL))
−
VDD
Q1
I = 1A
L = 40mH
VDD = 50V
IV
t0t1t2
IL
VAVL
t
IL
Q)]
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7
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