NJG1657MD7 - New Japan Radio Co., Ltd.

NJG1657MD7

- 1 -

Ver.2008-08-22

Pin connection

1. GND

2. GND

3. P1

4. GND

5. P3

6. GND

7. P4

*Exposed PAD: GND

8. GND

9. P2

10. GND

11. GND

12. VDD

13. CTL1

14. CTL2

DPDT SWITCH GaAs MMIC

! GENERAL DESCRIPTION ! PACKAGE OUTLINE

The NJG1657MD7 is a GaAs DPDT switch featured low

insertion loss, high isolation and small size package, and suited

for mobile terminal applications.

The NJG1657MD7 switches a path between common RF port

and five RF ports by three bit control signal from 1.7V of logical

high voltage. In addition, this switch includes ESD protection

circuits for good ESD tolerance.

The NJG1657MD7 is available in a very small, lead-free,

halogen-free, 1.6mm x 1.6mm x 0.397 mm, 14-pin EQFN14-D7

package.

! FEATURES

" Low insertion loss 0.3dB typ. @f=0.9GHz, PIN=30dBm

" High isolation 32dB typ. @f=0.9GHz, PIN=30dBm

" High power handling P-0.1dB=33dBm min. @f=0.9GHz, VDD=2.85V

" Package EQFN14-D7 (Package size: 1.6x1.6x0.397mm typ.)

! PIN CONFIGURATION

! TRUTH TABLE “High”=VCTL(H), “Low”=VCTL(L)

PATH CTL1 CTL2 SW1 SW2 SW3 SW4 SW5 SW6

P1-P3 Low Low ON OFF OFF ON OFF ON

P1-P4 High Low OFF ON ON OFF OFF ON

P2-P3 Low High OFF ON ON OFF ON OFF

P2-P4 High High ON OFF OFF ON ON OFF

DECODER

45 6 7 8

14 13 12

SW1 SW3 SW2 SW4

SW5 SW6

EQFN14-D7

(

view

)

NJG1657MD7

NOTE: Please note that any information on this catalog will be subject to change.

NJG1657MD7

- 2 -

! ABSOLUTE MAXIMUM RATINGS Ta=+25°C, Zs=Zl=50 ohm

PARAMETER SYMBOL CONDITIONS CONDITIONS UNITS

RF Input Power PIN V

DD=2.85V, VCTL=0/2.6V 36 dBm

Supply Voltage VDD VDD terminal 5.0 V

Control Voltage VCTL CTL1, CTL2 terminal 5.0 V

Power Dissipation PD 4-layer FR4 PCB with through-hole

(74.2x74.2mm), Tj=150°C 1300 mW

Operating Temp. Topr -40~+95 °C

Storage Temp. Tstg -55~+150 °C

! ELECTRICAL CHARACTERISTICS1 (DC CHARACTERISTICS)

General conditions: VDD=2.85V, VCTL(L)=0V, VCTL(H)=2.6V, Ta=+25°C, ZS=Zl=50 ohm, with application circuit

PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS

Operating Voltage VDD 2.5 2.85 4.5 V

Operating Current IDD P

IN=30dBm - 50 100

µA

Control Voltage (LOW) VCTL(L) 0 - 0.5 V

Control Voltage (HIGH) VCTL(H) 1.7 2.6 4.5 V

Control Current ICTL - 5 10 µA

NJG1657MD7

- 3 -

! ELECTRICAL CHARACTERISTICS2 (RF CHARACTERISTICS)

General conditions: VDD=2.85V, VCTL(L)=0V, VCTL(H)=2.6V, Ta=+25°C, ZS=Zl=50 ohm, with application circuit

PARAMETERS SYMBOL CONDITIONS MIN TYP MAX UNITS

Insertion Loss 1 LOSS1 f=0.9GHz, PIN=30dBm - 0.30 0.45 dB

Insertion Loss 2 LOSS2 f=1.9GHz, PIN=30dBm - 0.40 0.55 dB

Isolation 1 ISL1 f=0.9GHz, PIN=30dBm 30 32 - dB

Isolation 2 ISL2 f=1.9GHz, PIN=30dBm 24 26 - dB

0.1dB Compression

input power P-0.1dB f=0.9GHz 33 35 - dBm

2nd Harmonic Suppression 2fo f=0.9GHz, PIN=30dBm - -75 -60 dBc

3rd Harmonic Suppression 3fo f=0.9GHz, PIN=30dBm - -75 -60 dBc

VSWR (PC, P1, P2) VSWR f=0.9GHz, ON State - 1.2 1.4

Switching time TSW - 2 5 µs

NJG1657MD7

- 4 -

! TERMINAL INFORMATION

No. SYMBOL DESCRIPTION

1,2,4,6,8,

10,11 GND Ground terminal. Please connect this terminal with ground plane as close

as possible for excellent RF performance.

3 P1

RF input / output port. External capacitor is required to block the DC bias

voltage of internal circuit.

5 P3

RF input / output port. External capacitor is required to block the DC bias

voltage of internal circuit.

7 P4

RF input / output port. External capacitor is required to block the DC bias

voltage of internal circuit.

9 P2

RF input / output port. External capacitor is required to block the DC bias

voltage of internal circuit.

12 VDD

A supply voltage terminal (+2.5~+4.5V). Please place a bypass capacitor

between this and GND for avoiding RF noise from outside.

13 CTL1

14 CTL2

Control port. “High level” is DC +1.7V~4.5V, “Low level” is DC 0~+0.5V.

NJG1657MD7

- 5 -

-35

-30

-25

-20

-15

-10

-5

00.511.52

-45oC

-20oC

+25oC

+70oC

+90oC

+100oC

Tran s m iss ion (dB )

CTL2 Voltage ( V )

Transmission vs. Control Voltage

( P2-P4 ON, f=900MHz, VDD=2.85V, CTL1=2.6V )

! ELECTRICAL CHARACTERISTICS (With Application circuit, Loss of external circuit are excluded)

-2.0

-1.5

-1.0

-0.5

0.0

10 15 20 25 30 35 40

VDD=2.5V

VDD=2.85V

VDD=3.2V

VDD=4.5V

Insertion Loss (dB)

Input Power (dBm)

Insertion Loss vs. Input Power

( f=0.9GHz, P1-P3 ON, CTL1=CTL2=0V )

-40

-35

-30

-25

-20

-15

-10

-5

0.5 1.0 1.5 2.0 2.5 3.0

P1-P2

P3-P4

Isolation (dB)

Frequency (GHz)

Isolation vs. Frequency

( P1-P3 ON, VDD=2.85V, CTL1=CTL2=0V )

1.0

1.2

1.4

1.6

1.8

2.0

0.5 1.0 1.5 2.0 2.5 3.0

P1 port

P3 port

VSWR

Frequency (GHz)

VS WR vs. F reque n cy

( P1-P3 ON, VDD=2.85V, CTL1=CTL2= 0V )

-2.0

-1.5

-1.0

-0.5

0.0

0.5 1.0 1.5 2.0 2.5 3.0

Insertion Loss (dB)

Frequency (GHz)

Insertion Loss vs. Frequency

( P1-P3 ON, VDD=2.85V, CTL1=CTL2=0V )

-90

-85

-80

-75

-70

-65

-60

-55

-50

20 22 24 26 28 30 32

2fo

3fo

Harmonics (dBc)

Input Power (dBm)

Harmonics vs. Input Power

( f=90 0MHz, P1-P3 ON, CTL1=CTL2=0V )

I np ut 2f o=-8 8dBc

I np ut 3f o=-8 6dBc

NJG1657MD7

- 6 -

-40

-35

-30

-25

-20

-50 0 50 100

P1-P3 ON

P1-P4 ON

P2-P3 ON

P2-P4 ON

Isolation (dB)

Ambient Temperature ( oC )

P1-P2 Isolation vs. Ambient Temperature

( f=900MHz, VDD=2.85V )

! ELECTRICAL CHARACTERISTICS (With Application circuit, Loss of external circuit are excluded)

-2.0

-1.5

-1.0

-0.5

0.0

-50 0 50 100

f=0.9GHz

f=1.9GHz

Insertion Loss (dB)

Ambient Temperature ( oC )

Insertion Loss vs. Ambient Temperature

( P1-P3 ON, VDD=2.85V, CTL1=CTL2=0V )

1.0

1.2

1.4

1.6

1.8

2.0

-50 0 50 100

f=0.9GHz

f=1.9GHz

VSWR

Ambient Temperature ( oC )

VSWR vs. Ambient Temperature

( P1 port, VDD=2.85V, CTL1=CTL2=0V )

-40

-35

-30

-25

-20

-50 0 50 100

P1-P3 ON

P1-P4 ON

P2-P3 ON

P2-P4 ON

Isolation (dB)

Ambient Temperature ( oC )

P1-P2 Isolation vs. Ambient Temperature

( f=1.9GHz, VDD=2.85V )

-40

-35

-30

-25

-20

-50 0 50 100

P1-P3 ON

P1-P4 ON

P2-P3 ON

P2-P4 ON

Isolation (dB)

Ambient Temperature ( oC )

P3-P4 Isolation vs. Ambient Temperature

( f=1.9GHz, VDD=2.85V )

-40

-35

-30

-25

-20

-50 0 50 100

P1-P3 ON

P1-P4 ON

P2-P3 ON

P2-P4 ON

Isolation (dB)

Ambient Temperature ( oC )

P3-P4 Isolation vs. Ambient Temperature

( f=900MHz, VDD=2.85V )

NJG1657MD7

- 7 -

! ELECTRICAL CHARACTERISTICS (With Application circuit, Loss of external circuit are excluded)

-40

-35

-30

-25

-20

-50 0 50 100

P1-P4 ON

P2-P3 ON

Isolation (dB)

Ambient Temperature ( oC )

P1-P3 Isolation vs. Ambient Temperature

( f=900MHz, VDD=2.85V )

-40

-35

-30

-25

-20

-50 0 50 100

P1-P4 ON

P2-P3 ON

Isolation (dB)

Ambient Temperature ( oC )

P2-P4 Isolation vs. Ambient Temperature

( f=900MHz, VDD=2.85V )

-50 0 50 100

IDD

ICTL

Current IDD ICTL (µA)

Ambien t Temperature ( oC )

IDD, ICTL vs. Ambient Temperature

-50 0 50 100

P-0.1dB (dBm)

Am bient Temperature ( oC )

P-0.1dB vs. Ambient Temperature

( f=0.9GHz, P1-P3 ON, VDD=2.8 5V )

-90

-85

-80

-75

-70

-65

-60

-55

-50

20 22 24 26 28 30 32

-45oC

-20oC

+25oC

+70oC

+90oC

+100oC

2nd Harmonics (dBc)

Input Power (dBm)

2n d Ha rm onics vs . Input Power

( f=900MHz, P1-P3 ON, CTL1=CTL2=0V )

Input 2fo=-88dBc

-90

-85

-80

-75

-70

-65

-60

-55

-50

20 22 24 26 28 30 32

-45oC

-20oC

+25oC

+70oC

+90oC

+100oC

3rd Harmonics (dBc)

Input Power (dBm)

3rd Har mo nics vs. Input Power

( f=90 0MHz, P1-P3 ON, CTL1=CTL2=0V )

Input 2f o=-86dB c

NJG1657MD7

- 8 -

0.5

1.5

-50 0 50 100

Switching Time (us)

Am bient Temperature ( oC )

Switching Time vs. Am bient Temperature

( VDD=2.85V )

Voltage (arb. unit)

Time (0.5µsec/div)

Switching Time

( VDD=2.85V, CTL1=0V )

CTL2 Por t

P3 Port

1.3 µs

! ELECTRICAL CHARACTERISTICS (With Application circuit, Loss of external circuit are excluded)

10 15 20 25 30 35 40

VDD=2.5V

VDD=2.85V

VDD=3.2V

VDD=4.5V

Current IDD (uA)

Input Power (dBm)

Current IDD vs. Input Po wer

( f=0.9GHz, P1-P3 ON, CTL1=CTL2=0V )

-2.0

-1.5

-1.0

-0.5

0.0

10 15 20 25 30 35 40

VDD=2.5V

VDD=2.85V

VDD=3.2V

VDD=4.5V

Insertion Loss (dB)

Input Power (dBm)

Insertion Loss vs. Input Power

( f=0.9GHz, P1-P3 ON, CTL1=CTL2=0V )

NJG1657MD7

- 9 -

3P2P1

P3 P4

CTL1CTL2 VDD

DECODER

45678

14 13 12

SW1

SW3 SW2

SW4

SW5 SW6

2.85V

0/2.6V

56pF 56pF

56pF56pF

1000pF

! APPLICATION CIRCUIT

! TEST PCB LAYOUT

(TOP VIEW)

Losses of PCB, capacitors and connectors

PARTS LIST

PRECAUTIONS

[1]The DC blocking capacitors have to be placed at RF terminal of P1, P2, P3, P4 and PC.

Please choose appropriate capacitance values to the application frequency.

[2]To reduce strip line influence on RF characteristics, please locate bypass capacitors(C5)

as close as possible to each terminals.

[3]For good isolation, the GND terminal must be connected to the ground plane of substrate,

and through-holes for GND should be placed near by the pin connection.

Frequency (GHz) Loss (dB)

0.9 0.30

1.9 0.49

PART ID Value COMME NT

C1~C4 56pF

C5 1000pF

MURATA

(GRM15)

PCB: FR-4, t=0.2mm

Capacitor size: 1005

Strip Line Width: 0.4mm

PCB size: 26 x 26mm

CTL1

CTL2

GND

C1 C2

C3 C4

P3 P4

NJG1657MD7

- 10 -

! PACKAGE OUTLINE (EQFN14-D7)

Cautions on using this product

This product contains Gallium-Arsenide (GaAs) which is a harmful material.

• Do NOT eat or put into mouth.

• Do NOT dispose in fire or break up this product.

• Do NOT chemically make gas or powder with this product.

• To waste this

roduct

lease obe

the relatin

law of

countr

This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle

with care to avoid these damages.

[CAUTION]

The specifications on this databook are only

given for information , without any guarantee

as regards either mistakes or omissions. The

application circuits in this databook are

described only to show representative usages

of the product and not intended for the

guarantee or permission of any right including

the industrial rights.