5-1
Semiconductor
Features
• 2.2A and 2.5A, 450V and 500V
•r
DS(ON) = 3.0Ω and 4.0Ω
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Majority Carrier Device
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Description
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching conver-
tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
gate drive power. These types can be operated directly from
integrated circuits.
Formerly developmental type TA17405.
Symbol
Packaging
JEDEC TO-204AA
Ordering Information
PART NUMBER PACKAGE BRAND
IRF420 TO-204AA IRF420
IRF421 TO-204AA IRF421
IRF422 TO-204AA IRF422
IRF423 TO-204AA IRF423
NO TE: When ordering, use the entire part number.
G
D
S
DRAIN
(FLANGE)
SOURCE (PIN 2)
GATE (PIN 1)
July 1998
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures.
Copyright © Harris Corporation 1998 File Number 1571.3
IRF420, IRF421,
IRF422, IRF423
2.2A and 2.5A, 450V and 500V, 3.0 and 4.0 Ohm,
N-Channel Power MOSFETs
5-2
Absolute Maximum Ratings TC = 25oC Unless Otherwise Specified
IRF420 IRF421 IRF422 IRF423 UNITS
Drain to Source Breakdown Voltage (Note 1). . . . . . . . . .VDS 500 450 500 450 V
Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR 500 450 500 450 V
Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . ID
TC= 100oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID2.5
1.6 2.5
1.6 2.2
1.4 2.2
1.4 A
A
Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM 10 10 8 8 A
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS ±20 ±20 ±20 ±20 V
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . .PD50 50 50 50 W
Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4 0.4 0.4 0.4 W/oC
Single Pulse Avalanche Energy Rating (Note 4) . . . . . . .EAS 210 210 210 210 mJ
Operating and Storage Temperature . . . . . . . . . . . .TJ, TSTG -55 to 150 -55 to 150 -55 to 150 -55 to 150 oC
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL
Package Body for 10s, See TB334. . . . . . . . . . . . . . . Tpkg 300
260 300
260 300
260 300
260
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 125oC.
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Drain to Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V, (Figure 10)
IRF420, IRF422 500 - - V
IRF421, IRF423 450 - - V
Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 250µA 2.0 - 4.0 V
Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA
VDS = 0.8 x Rated BVDSS, VGS = 0V,
TJ= 125oC- - 250 µA
On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON)MAX, VGS = 10V
(Figure 7)
IRF420, IRF421 2.5 - - A
IRF422, IRF423 2.2 - - A
Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA
Drain to Source On Resistance (Note 2) rDS(ON) ID = 1.4A, VGS = 10V, (Figures 8, 9)
IRF420, IRF421 - 2.5 3.0 Ω
IRF422, IRF423 - 3.0 4.0 Ω
Forward Transconductance (Note 2) gfs VDS ≥ 10V, ID = 2.0A, (Figure 12) 1.5 2.3 - S
Turn-On Delay Time td(ON) VDD = 250V, ID≈ 2.5A, RG = 18Ω, RL = 96Ω,
VGS = 10V, (Figures 17, 18) MOSFET Switching
Times are Essentially Independent of Operating
Temperature
-1015ns
Rise Time tr-1218ns
Turn-Off Delay Time td(OFF) -2842ns
Fall Time tf-1218ns
Total Gate Charge
(Gate to Source + Gate to Drain) Qg(TOT) VGS = 10V, ID≈ 2.5A, VDS = 0.8 x Rated BVDSS,
IG(REF) = 1.5mA, (Figures 14, 19, 20)
Gate Charge is Essentially Independent of
Operating Temperature
-1119nC
Gate to Source Charge Qgs -5-nC
Gate to Drain “Miller” Charge Qgd -6-nC
IRF420, IRF421, IRF422, IRF423
5-3
Input Capacitance CISS VDS = 25V, VGS = 0V, f = 1MHz, (Figure 11) - 300 - pF
Output Capacitance COSS -75- pF
Reverse Transfer Capacitance CRSS -20- pF
Internal Drain Inductance LDMeasured between the
Contact Screw on the
Flange that is Closer to
Source and Gate Pins
and the Center of Die.
Modified MOSFET
Symbol Showing the
Internal Devices
Inductances.
- 5.0 - nH
Internal Source Inductance LSMeasured from the
Source Lead, 6mm
(0.25in) from the Flange
and Source Bonding
Pad.
- 12.5 - nH
Thermal Resistance Junction to Case RθJC - - 2.5 oC/W
Thermal Resistance Junction to Ambient RθJA Free Air Operation - - 30 oC/W
Source to Drain Diode Specifications
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
Continuous Source to Drain Current ISD Modified MOSFET
Symbol Showing the
Integral Reverse P-N
Junction Diode
- - 2.5 A
Pulse Source to Drain Current
(Note 3) ISDM - - 10 A
Source to Drain Diode Voltage (Note 2) VSD TJ = 25oC, ISD = 2.5A, VGS = 0V, (Figure 13) - - 1.4 V
Reverse Recovery Time trr TJ = 25oC, ISD = 2.5A, dISD/dt = 100A/µs 130 270 540 ns
Reverse Recovered Charge QRR TJ = 25oC, ISD = 2.5A, dISD/dt = 100A/µs 0.57 1.2 2.3 µC
NOTES:
2. Pulse test: pulse width ≤300µs, duty cycle ≤2%.
3. Repetitive rating: pulse width limited by max junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 60mH, RG = 25Ω, peak IAS = 2.5A, Figures 15, 16.
Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS
LD
LS
D
S
G
G
D
S
IRF420, IRF421, IRF422, IRF423
5-4
Typical Performance Curves
TC = 25oC Unless Otherwise Specified
FIGURE 1. NORMALIZED PO WER DISSIPATION vs CASE
TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. OUTPUT CHARACTERISTICS
0 50 100 150
0
TC, CASE TEMPERATURE (oC)
POWER DISSIPATION MULTIPLIER
0.2
0.4
0.6
0.8
1.0
1.2
TC, CASE TEMPERATURE (oC)
50 75 100 15025
2.5
2.0
1.5
0
1.0
ID, DRAIN CURRENT (A)
0.5
IRF422, IRF423
125
IRF420, IRF421
ZθJC, TRANSIENT
10
1
0.1
0.01 10-2
10-5 10-4 10-3 0.1 1 10
SINGLE PULSE
t1, RECTANGULAR PULSE DURATION (s)
THERMAL IMPEDANCE
0.5
0.2
0.1
0.05
0.01
0.02
NOTES:
DUTY FACTOR: D = t1/t2
TJ = PDM x ZθJC + TC
PDM
t1t2
10
1
103
110
102
0.1
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
IRF422/3
IRF420/1
IRF422/3
IRF420/1
IRF421/3
IRF420/2
10µs
100µs
1ms
DC
OPERATION IN THIS
AREA IS LIMITED
BY rDS(ON)
TC = 25oC
TJ = MAX RATED
SINGLE PULSE
10ms
VDS, DRAIN TO SOURCE VOLTAGE (V)
50 100 150 2000 250
5
4
3
0
2
ID, DRAIN CURRENT (A)
VGS = 10V
VGS = 6V
VGS = 5.5V
VGS = 5V
VGS = 4.5V
VGS = 4V
80µs PULSE TEST
1
IRF420, IRF421, IRF422, IRF423
5-5
FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS
NOTE: Heating effect of 2µs pulse is minimal.
FIGURE 8. DRAIN T O SOURCE ON RESISTANCE vs GATE
VOLTAGE AND DRAIN CURRENT FIGURE 9. NORMALIZED DRAIN TO SOURCE vs JUNCTION
TEMPERATURE
FIGURE 10. NORMALIZED DRAIN T O SOURCE BREAKDO WN
VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
Typical Performance Curves
TC = 25oC Unless Otherwise Specified (Continued)
VDS, DRAIN TO SOURCE VOLTAGE (V)
4 8 12 16020
5
4
3
0
2
I
D
, DRAIN CURRENT (A)
VGS = 10V
VGS = 6V
VGS = 5.5V
VGS = 5V
VGS = 4.5V
VGS = 4V
80µs PULSE TEST
1
VDS ≥ 50V
80µs PULSE TEST
TJ = 150oCTJ = 25oC
ID, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
10
1
0.1
0.01 0246810
I
D
, DRAIN CURRENT (A)
2468010
10
8
6
0
4
rDS(ON), DRAIN TO SOURCE
VGS = 20V
80µs PULSE TEST
2
VGS = 10V
ON RESISTANCE (Ω)
3.0
1.8
0.6
0 60 160-60 TJ, JUNCTION TEMPERATURE (oC)
NORMALIZED ON RESISTANCE
ID = 2.5A
2.4
1.2
0-40 -20 20 40 80 100 140120
VGS = 10V
1.25
1.05
0.85
TJ, JUNCTION TEMPERATURE (oC)
NORMALIZED DRAIN TO SOURCE
ID = 250µA
1.15
0.95
0.75
BREAKDOWN VOLTAGE
0 60 160-60 -40 -20 20 40 80 100 140120
VDS, DRAIN TO SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
1000
800
600
400
200
0
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGS
CISS
COSS
CRSS
110 102
IRF420, IRF421, IRF422, IRF423
5-6
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
Typical Performance Curves
TC = 25oC Unless Otherwise Specified (Continued)
ID, DRAIN CURRENT (A)
0.8 1.6 2.4 3.2
0 4.0
4.0
3.2
2.4
0
1.6
gfs, TRANSCONDUCTANCE (S)
PULSE DURATION = 80µs
0.8
TJ = 150oC
TJ = 25oC
TJ = 150oC
TJ = 25oC
ISD, SOURCE TO DRAIN CURRENT (A)
VSD, SOURCE TO DRAIN VOLTAGE (V)
10
1
0.10 0.4 0.8 1.2 1.6 2.0
PULSE DURATION = 80µs
Qg(TOT), TOTAL GATE CHARGE (nC)
48
12 16
020
20
16
12
0
8
VGS, GATE TO SOURCE VOLTAGE (V)
VDS = 400V
4
VDS = 250V
VDS = 100V
ID = 2.5A
IRF420, IRF421, IRF422, IRF423
5-7
Test Circuits and Waveforms
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS
tP
VGS
0.01Ω
L
IAS
+
-
VDS
VDD
RG
DUT
VARY tP TO OBTAIN
REQUIRED PEAK IAS
0V
VDD
VDS
BVDSS
tP
IAS
tAV
0
VGS
RL
RG
DUT
+
-VDD
tON
td(ON)
tr
90%
10%
VDS 90%
10%
tf
td(OFF)
tOFF
90%
50%
50%
10% PULSE WIDTH
VGS
0
0
0.3µF
12V
BATTERY 50kΩ
VDS
S
DUT
D
G
IG(REF)
0
(ISOLATED
VDS
0.2µF
CURRENT
REGULATOR
ID CURRENT
SAMPLING
IG CURRENT
SAMPLING
SUPPLY)
RESISTOR RESISTOR
SAME TYPE
AS DUT Qg(TOT)
Qgd
Qgs
VDS
0
VGS
VDD
IG(REF)
0
IRF420, IRF421, IRF422, IRF423
