ITT SEMICOND/ INTERMETALL G1E D MM 4642711 00031352 4TS MISTI LL4148 Silicon Epitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic insertion. Identical electrically to standard JEDEC 1N4148 These diodes are delivered taped. Details see Taping. Absolute Maximum Ratings 3.5201 Cathode Mark eS Ss 4 _ + rT if) ~ > Glass case MiniMELF Weight approx. 0.05 g Dimensions in mm Symbol Value Unit Reverse Voltage Vr 75 Vv Peak Reverse Voltage Vam 100 V Rectified Current (Average) lo 1501) mA Half Wave Rectification with Resist. Load at Tamb = 25 C and f= 50 Hz Surge Forward Current att<1sandT, = 25C lesm 500 mA Power Dissipation at Tamp = 25 C Prot 5001) mw Junction Temperature T; 175 C Storage Temperature Range Ts 65 to +175 C 1) Valid provided that electrodes are kept at ambient temperature. 76 ITT SEMICOND/ INTERMETALL 6G1E D MM 4642711 0003153 331 MBISI Characteristics at T, = 25 C Symbol Min. Typ. Max. Unit Forward Voltage Ve - - 1 Vv at lr = 10mA Leakage Current at Va = 20V Ir - - 25 nA at Va = 75V Ir - - 5 pA at Va = 20V, T, = 150C Ir - - 50 pA Reverse Breakdown Voltage VieryR 100 - - Vv tested with 100 A Pulses Capacitance Ctet - - 4 pF at Ve = Ver =0 Voltage Rise when Switching ON Vir - - 2.5 Vv tested with 50 mA Forward Pulses tp = 0.1 ws, Rise Time < 30 ns, f, = 5 to 100 kHz Reverse Recovery Time tr - - 4 ns from Ir = 10 mA to Ip = 1 MA, Ve = 6 V, R, = 1000 Thermal Resistance Rina ~ - 0.35" K/mW Junction to Ambient Air Rectification Efficiency tv 0.45 - - - at f = 100 MHz, Var = 2V 1) Valid provided that electrodes are kept at ambient temperature. |602 Yop 22 V ee 2 [hs Y% 222 Oo Rectification Efficiency Measurement Circuit 77, ITT SEMICOND/ INTERMETALL D MM 4642711 0003154 278 MEISI Forward characteristics Dynamic forward resistance versus forward current mA LL 4148 Q LL 4148 T= 25C f =1kH2 'c " T,=100C 7,= 25C 102 10"! 1 10 102 mA I, Admissible power dissipation Relative capacitance versus ambient temperature versus reverse voltage Valid provided that electrodes are kept at ambient temperature mw LL 4148 LL 4148 1000 | | a | | : T,= 25C 900 | WS 40 | | CratVe) f = 1 MHz Prot 800 : i Crot (OV) 700 1,0 600 SOOT -- 4 - tL SN 500 \ 0,9 t I] | ore 400 H 300 N N 08 NN | 200 i ON 100 NQ 0,7 0 JIN J 0 100 200C 0 2 4 6 8 10 V lamb Ve 78 ITT SEMICOND/ INTERMETALL 61E D M@ 4482711 003155 104 MMISI LL4148 Leakage current versus junction temperature nA LL4148 0 100 200 C i Admissible repetitive peak forward current versus pulse duration Valid provided that electrodes are kept at ambient temperature vit) /T I term LL4148 T= Wy r | 105 2 s 104 2 5 0% 2 s 02 s wl , 5 1 5s Ws