© Semiconductor Components Industries, LLC, 2005
October, 2005 − Rev. 4 Publication Order Number:
BF420/D
1
BF420, BF422
High Voltage Transistors
NPN Silicon
Features
•Pb−Free Package is Available*
MAXIMUM RATINGS
Rating Symbol BF420 BF422 Unit
Collector−Emitter Voltage VCEO 300 250 Vdc
Collector−Base Voltage VCBO 300 250 Vdc
Emitter−Base Voltage VEBO 5.0 Vdc
Collector Current − Continuous IC50 mAdc
Collector Current − Peak ICM 100 mA
Total Device Dissipation (Note 1)
@ TA = 25°C
Derate above 25°C
PD830
6.6 mW
mW/°C
Operating and Storage Junction
Temperature Range TJ, Tstg −55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance,
Junction−to−Ambient RqJA 150 °C/W
Thermal Resistance,
Junction−to−Lead RqJL 68 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Mounted on a FR4 board with 200 mm2 of 1 oz copper and lead length of
5 mm.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
MARKING
DIAGRAM
BF42x = Device Code
x = 0 or 2
A = Assembly Location
Y = Year
WW = Work Week
G= Pb−Free Package
TO−92
CASE 29
STYLE 14
123
BF42x
AYWW G
G
Device Package Shipping†
ORDERING INFORMATION
BF420ZL1 TO−92 2000/Ammo Box
BF422 TO−92 5000 Units/Box
BF422G TO−92
(Pb−Free) 5000 Units/Box
BF422RL1 TO−92 2000/Tape & Reel
BF422ZL1 TO−92 2000/Ammo Pack
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
COLLECTOR
2
3
BASE
1
EMITTER
BF420ZL1G TO−92
(Pb−Free) 2000/Ammo Box
BF422RL1G TO−92
(Pb−Free) 2000/Tape & Reel
BF422ZL1G TO−92
(Pb−Free) 2000/Ammo Pack
(Note: Microdot may be in either location)
BF420, BF422
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 1)
(IC = 1.0 mAdc, IB = 0) BF420
BF422
V(BR)CEO 300
250 −
−
Vdc
Collector−Base Breakdown Voltage
(IC = 100 mAdc, IE = 0) BF420
BF422
V(BR)CBO 300
250 −
−
Vdc
Emitter−Base Breakdown Voltage
(IE = 100 mAdc, IC = 0) BF420
BF422
V(BR)EBO 5.0
5.0 −
−
Vdc
Collector Cutoff Current
(VCB = 200 Vdc, IE = 0) BF420
BF422
ICBO −
−0.01
−
mAdc
Emitter Cutoff Current
(VEB = 5.0 Vdc, IC = 0) BF420
BF422
IEBO −
−100
−
nAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 25 mAdc, VCE = 20 Vdc) BF420
BF422
hFE 50
50 −
−
−
Collector−Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc) VCE(sat) − 0.5 Vdc
Base−Emitter Saturation Voltage
(IC = 20 mAdc, IB = 2.0 mAdc) VBE(sat) − 2.0 Vdc
SMALL−SIGNAL CHARACTERISTICS
CurrentGain − Bandwidth Product
(IC = 10 mAdc, VCE = 10 Vdc, f = 20 MHz) fT60 − MHz
Common Emitter Feedback Capacitance
(VCB = 30 Vdc, IE = 0, f = 1.0 MHz) Cre − 1.6 pF
1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.
BF420, BF422
http://onsemi.com
3
C, CAPACITANCE (pF)
Figure 1. DC Current Gain
VR, REVERSE VOLTAGE (VOLTS)
0.1
100
0.1
10
1.0 10 1000
Ceb @ 1MHz
Figure 2. Capacitance
IC, COLLECTOR CURRENT (mA)
10070503020107.05.03.02.0
80
70
50
30
20
10
TJ = 25°C
VCE = 20 V
f = 20 MHz
f, CURRENT−GAIN BANDWIDTH (MHz)
T
1.0
IC, COLLECTOR CURRENT (mA)
Figure 3. Current−Gain − Bandwidth
V, VOLTAGE (VOLTS)
1.4
0.0
1.2
1.0
0.8
0.6
0.4
0.2
100100.1 1.0
100
1.0 Ccb @ 1MHz
60
40
VBE(on) @ 25°C, VCE = 10 V
VCE(sat) @ 25°C, IC/IB = 10
VBE(sat) @ 25°C, IC/IB = 10
VCE(sat) @ 125°C, IC/IB = 10
VCE(sat) @ −55°C, IC/IB = 10
VBE(sat) @ 125°C, IC/IB = 10
VBE(sat) @ −55°C, IC/IB = 10
VBE(on) @ 125°C, VCE = 10 V
VBE(on) @ −55°C, VCE = 10 V
Figure 4. ”ON” Voltages
IC, COLLECTOR CURRENT (mA)
120
0.1 1.0 10
100
80
60
0
hFE, DC CURRENT GAIN
TJ = +125°C
25°C
−55°C
VCE = 10 Vdc
100
20
40
BF420, BF422
http://onsemi.com
4
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
STYLE 14:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
R
A
P
J
L
B
K
G
H
SECTION X−X
C
V
D
N
N
XX
SEATING
PLANE DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.175 0.205 4.45 5.20
B0.170 0.210 4.32 5.33
C0.125 0.165 3.18 4.19
D0.016 0.021 0.407 0.533
G0.045 0.055 1.15 1.39
H0.095 0.105 2.42 2.66
J0.015 0.020 0.39 0.50
K0.500 −−− 12.70 −−−
L0.250 −−− 6.35 −−−
N0.080 0.105 2.04 2.66
P−−− 0.100 −−− 2.54
R0.115 −−− 2.93 −−−
V0.135 −−− 3.43 −−−
1
TO−92
(TO−226)
CASE 029−11
ISSUE AL
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BF420/D
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