3.1 - 153
3.1
1000 Volt, 8 Amp, N-Channel IGBT
In A Hermetic Metal Package
4 11 R2
Supersedes 2 07 R1
INSULATED GATE BIPOLAR TRANSISTOR
(IGBT) IN A HERMETIC ISOLATED SIP PACKAGE
FEATURES
• Two Isolated IGBTs In A Hermetic SIP Package
• High Input Impedance
• Low On-Voltage
• High Current Capability
• Fast Turn-Off
• Low Conductive Losses
• Available With Free Wheeling Diodes
• Available Screened To MIL-S-19500, TX, TXV And S Levels
DESCRIPTION
This IGBT power transistor features a high impedance insulated gate and a low
on-resistance characteristic of bipolar transistors. These devices are ideally suited
for motor drives, UPS converters, power supplies and resonant power converters.
MAXIMUM RATINGS @ 25°C Unless Specified Otherwise
OM6514SS
OM6515SS
SCHEMATIC
.140 TYP.
.200 TYP.
.270
MAX.
.060 DIA.TYP.
6 PLACES
1.375
.500
MIN.
.302
.265
.487
.752
REF.
.118
.150 DIA.
THRU 2
PLACES
.040
.770
1.000 .188
REF.
Pin 1: Collector
Pin 2: Emitter
Pin 3: Gate
Pin 4: Gate
Pin 5: Emitter
Pin 6: Collector
OM6514SS
OM6515SS (with Diode)
123456
CEGGEC
MECHANICAL OUTLINE
PART IC (Cont.) V(BR)CES VCE (sat) (Typ.) Tf(Typ.) qqJC PDTJ
NUMBER @ 90°C, A V V ns °C/W W °C
OM6514SS 8 1000 2.8 220 1.70 75 150
OM6515SS 8 1000 2.8 220 1.70 75 150
CC
EGGE
C
CEGGE
NOTE: IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
PACKAGE OPTIONS
MOD PAK 6 PIN SIP
OM6514SS - OM6515SS
3.1
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
PRELIMINARY DATA: OM6514SS
IGBT CHARACTERISTICS
Parameter - OFF Min. Typ. Max. Units Test Conditions
V(BR)CES Collector Emitter 1000 V VCE = 0
Breakdown Voltage IC= 2 mA
ICES Zero Gate Voltage 0.25 mA VCE = Max. Rat., VGE = 0
Drain Current 1.0 mA VCE = 0.8 Max. Rat., VGE = 0
TC= 125°C
IGES Gate Emitter Leakage 100 nA VGE = ±20 V
Current VCE = 0 V
Parameter - ON
VGE(th) Gate Threshold Voltage 2.0 4.0 V VCE = VGE, IC= 2 mA
VCE(sat) Collector Emitter 3.4 V VGE = 15 V, IC= 8 A
Saturation Voltage TC= 25°C
VCE(sat) Collector Emitter 2.8 3.0 V VGE = 15 V, IC= 8 A
Saturation Voltage TC= 100°C
Dynamic
gfs Forward Transductance 3.0 S VCE = 25 V, IC= 8 A
Cies Input Capacitance 1500 pF VGE = 0
Coes Output Capacitance 150 pF VCE = 25 V
Cres Reverse Transfer Capacitance 50 pF f = 1 mHz
Switching-Resistive Load
Td(on) Turn-On Time 60 nS VCC = 800 V, IC= 8 A
trRise Time 220 nS
VGE = 15 V, Rg= 47 , Tj= 25°C
Switching-Inductive Load
tr(Volt) Off Voltage Rise Time .8 µS VCEclamp = 800 V, IC= 8 A
tfFall Time .9 µS VGE = 15 V, Rg= 47
tcross Cross-Over Time 2.2 µS L = 0.1 mH, Tj= 100°C
Eoff Turn-Off Losses 6.0 mJ
PRELIMINARY DATA: OM6515SS
IGBT CHARACTERISTICS
Parameter - OFF (see Note 1) Min. Typ. Max. Units Test Conditions
V(BR)CES Collector Emitter 1000 V VCE = 0
Breakdown Voltage IC= 2 mA
ICES Zero Gate Voltage 0.25 mA VCE = Max. Rat., VGE = 0
Drain Current 1.0 mA VCE = 0.8 Max. Rat., VGE = 0
TC= 125°C
IGES Gate Emitter Leakage 100 nA VGE = ±20 V
Current VCE = 0 V
Parameter - ON
VGE(th) Gate Threshold Voltage 2.0 4.0 V VCE = VGE, IC= 2 mA
VCE(sat) Collector Emitter 3.4 V VGE = 15 V, IC= 8 A
Saturation Voltage TC= 25°C
VCE(sat) Collector Emitter 2.8 3.0 V VGE = 15 V, IC= 8 A
Saturation Voltage TC= 100°C
Dynamic
gfs Forward Transductance 3.0 S VCE = 25 V, IC= 8 A
Cies Input Capacitance 1500 pF VGE = 0
Coes Output Capacitance 150 pF VCE = 25 V
Cres Reverse Transfer Capacitance 50 pF f = 1 mHz
Switching-Resistive Load
Td(on) Turn-On Time 60 nS VCC = 800 V, IC= 8 A
trRise Time 220 nS
VGE = 15 V, Rg= 47 , Tj= 25°C
Switching-Inductive Load
tr(Volt) Off Voltage Rise Time .8 µS VCEclamp = 800 V, IC= 8 A
tfFall Time .9 µS VGE = 15 V, Rg= 47
tcross Cross-Over Time 2.2 µS L = 0.1 mH, Tj= 100°C
Eoff Turn-Off Losses 6.0 mJ
DIODE CHARACTERISTICS
VfMaximum Forward Voltage 3.3 V IF= 12 A, TC= 25°C
2.2 V IF= 12 A, TC= 150°C
IrMaximum Reverse Current 500 µA VR= 1000 V, TC= 25°C
4.0 mA VR= 800 V, TC= 125°C
trr Reverse Recovery Time 35 nS IF= 1 A, di / dt= -15 A µ/S
VR= 30 V, Tj= 25°C
Note 1: Limited by diode Ircharacteristic.
