OM6514SS OM6515SS INSULATED GATE BIPOLAR TRANSISTOR (IGBT) IN A HERMETIC ISOLATED SIP PACKAGE 1000 Volt, 8 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES * * * * * * * * Two Isolated IGBTs In A Hermetic SIP Package High Input Impedance Low On-Voltage High Current Capability Fast Turn-Off Low Conductive Losses Available With Free Wheeling Diodes Available Screened To MIL-S-19500, TX, TXV And S Levels DESCRIPTION This IGBT power transistor features a high impedance insulated gate and a low on-resistance characteristic of bipolar transistors. These devices are ideally suited for motor drives, UPS converters, power supplies and resonant power converters. MAXIMUM RATINGS @ 25C Unless Specified Otherwise PART NUMBER OM6514SS OM6515SS IC (Cont.) @ 90C, A 8 8 V(BR)CES V 1000 1000 VCE (sat) (Typ.) V 2.8 2.8 Tf (Typ.) ns 220 220 SCHEMATIC PD W 75 75 qJC C/W 1.70 1.70 TJ C 150 150 MECHANICAL OUTLINE OM6514SS 1.375 .770 C C E G G .040 .302 .118 .265 .150 DIA. THRU 2 PLACES 1 C E 2 3 E G 4 G 5 E 6 C .752 REF. .487 OM6515SS (with Diode) .500 MIN. .200 TYP. 1.000 .060 DIA.TYP. 6 PLACES C E G G E C Pin 1: Collector Pin 2: Emitter Pin 3: Gate .188 REF. Pin 4: Gate Pin 5: Emitter Pin 6: Collector PACKAGE OPTIONS 6 PIN SIP MOD PAK NOTE: IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information. 4 11 R2 Supersedes 2 07 R1 3.1 - 153 .140 TYP. .270 MAX. 3.1 PRELIMINARY DATA: OM6515SS IGBT CHARACTERISTICS IGBT CHARACTERISTICS Parameter - OFF Min. Typ. Max. Units Test Conditions Parameter - OFF (see Note 1) Min. Typ. Max. Units Test Conditions V(BR)CES Collector Emitter 1000 V(BR)CES Collector Emitter 1000 V Breakdown Voltage ICES VCE = 0 IC = 2 mA 205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246 Zero Gate Voltage 0.25 mA VCE = Max. Rat., VGE = 0 Drain Current 1.0 mA VCE = 0.8 Max. Rat., VGE = 0 V Breakdown Voltage ICES IC = 2 mA Zero Gate Voltage 0.25 mA VCE = Max. Rat., VGE = 0 Drain Current 1.0 mA VCE = 0.8 Max. Rat., VGE = 0 Gate Emitter Leakage 100 nA VGE = 20 V TC = 125C IGES Gate Emitter Leakage 100 nA Current VGE = 20 V VGE(th) Gate Threshold Voltage TC = 125C IGES VCE = 0 V Parameter - ON VCE = 0 Current VCE = 0 V Parameter - ON 2.0 VCE(sat) Collector Emitter 4.0 3.4 V VCE = VGE, IC = 2 mA VGE(th) V VGE = 15 V, IC = 8 A VCE(sat) Collector Emitter Saturation Voltage TC = 25C VCE(sat) Collector Emitter 2.8 3.0 V Saturation Voltage VGE = 15 V, IC = 8 A 2.0 4.0 3.4 V VCE = VGE, IC = 2 mA V VGE = 15 V, IC = 8 A V VGE = 15 V, IC = 8 A Saturation Voltage TC = 25C VCE(sat) Collector Emitter TC = 100C Dynamic Gate Threshold Voltage 2.8 3.0 Saturation Voltage TC = 100C Dynamic gfs Forward Transductance Cies Input Capacitance 1500 Coes Output Capacitance 150 pF Cres Reverse Transfer Capacitance 50 pF 3.0 S VCE = 25 V, IC = 8 A gfs Forward Transductance pF VGE = 0 Cies Input Capacitance 1500 VCE = 25 V Coes Output Capacitance 150 pF VCE = 25 V f = 1 mHz Cres Reverse Transfer Capacitance 50 pF f = 1 mHz Switching-Resistive Load 3.0 S VCE = 25 V, IC = 8 A pF VGE = 0 Switching-Resistive Load Td(on) Turn-On Time 60 nS VCC = 800 V, IC = 8 A Td(on) Turn-On Time 60 nS VCC = 800 V, IC = 8 A tr Rise Time 220 nS VGE = 15 V, Rg = 47 , Tj = 25C tr Rise Time 220 nS VGE = 15 V, Rg = 47 , Tj = 25C VCEclamp = 800 V, IC = 8 A Switching-Inductive Load Switching-Inductive Load tr(Volt) Off Voltage Rise Time .8 S VCEclamp = 800 V, IC = 8 A tr(Volt) Off Voltage Rise Time .8 S tf Fall Time .9 S VGE = 15 V, Rg = 47 tf Fall Time .9 S VGE = 15 V, Rg = 47 tcross Cross-Over Time 2.2 S L = 0.1 mH, Tj = 100C tcross Cross-Over Time 2.2 S L = 0.1 mH, Tj = 100C Eoff Turn-Off Losses 6.0 mJ Eoff Turn-Off Losses 6.0 mJ DIODE CHARACTERISTICS Vf Maximum Forward Voltage Ir Maximum Reverse Current trr Reverse Recovery Time 3.3 V 2.2 V IF = 12 A, TC = 25C IF = 12 A, TC = 150C 500 A VR = 1000 V, TC = 25C 4.0 mA VR = 800 V, TC = 125C 35 nS IF = 1 A, di / dt = -15 A /S VR = 30 V, Tj = 25C Note 1: Limited by diode Ir characteristic. OM6514SS - OM6515SS 3.1 PRELIMINARY DATA: OM6514SS