2SC2655 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2655 Industrial Applications Power Amplifier Applications Power Switching Applications * Unit: mm Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) * High collector power dissipation: PC = 900 mW * High-speed switching: tstg = 1.0 s (typ.) * Complementary to 2SA1020. Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V IC 2 A Collector current Base current IB 0.5 A Collector power dissipation PC 900 mW Junction temperature Tj 150 C JEITA Tstg -55 to 150 C TOSHIBA Storage temperature range JEDEC TO-92MOD 2-5J1A Weight: 0.36 g (typ.) 1 2004-07-07 2SC2655 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 50 V, IE = 0 1.0 A Emitter cut-off current IEBO VEB = 5 V, IC = 0 1.0 A V (BR) CEO IC = 10 mA, IB = 0 50 V VCE = 2 V, IC = 0.5 A 70 240 hFE (2) VCE = 2 V, IC = 1.5 A 40 Collector-emitter saturation voltage VCE (sat) IC = 1 A, IB = 0.05 A 0.5 V Base-emitter saturation voltage VBE (sat) IC = 1 A, IB = 0.05 A 1.2 V VCE = 2 V, IC = 0.5 A 100 MHz VCB = 10 V, IC = 0, f = 1 MHz 30 pF 0.1 1.0 0.1 hFE (1) DC current gain (Note) Transition frequency fT Collector output capacitance Cob Storage time tstg 20 s Input IB2 Switching time ton IB1 Turn-on time IB1 IB2 Output 30 Collector-emitter breakdown voltage s 30 V Fall time tf IB1 = -IB2 = 0.05 A, duty cycle 1% Note: hFE (1) classification O: 70 to 140, Y: 120 to 240 Marking C2655 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 2SC2655 IC - VCE VCE - IC 2.4 Common emitter 25 (V) Ta = 25C 20 VCE 15 18 12 1.6 Collector-emitter voltage Collector current IC (A) 2.0 1.0 10 1.2 8 6 0.8 4 0.4 0 0 IB = 2 mA 4 6 0.6 IB = 5 mA 10 20 0.4 30 40 0.2 Common emitter Ta = 25C 0 2 0.8 8 10 Collector-emitter voltage VCE 12 0 0 14 0.4 0.8 1.2 1.6 2.0 2.4 Collector current IC (A) (V) VCE - IC VCE - IC 1.0 1.0 (V) VCE 0.8 Collector-emitter voltage Collector-emitter voltage VCE (V) IB = 5 mA 0.6 10 IB = 5 mA 20 0.4 30 40 0.2 Common emitter 0.8 0.6 20 10 30 0.4 40 50 0.2 Common emitter Ta = 100C 0 0 0.4 0.8 1.2 1.6 Collector current IC Ta = -55C 2.0 0 0 2.4 (A) 0.4 0.8 1.2 1.6 2.0 2.4 Collector current IC (A) hFE - IC 1000 Common emitter Collector-emitter saturation voltage VCE (sat) (V) hFE DC current gain 1 300 Ta = 100C 25 100 -55 50 30 10 0.01 VCE (sat) - IC VCE = 2 V 500 0.03 0.1 0.3 Common emitter 0.3 0.1 Ta = 100C 0.05 Collector current IC (A) 25 -55 0.02 0.01 1 IC/IB = 20 0.5 0.03 0.1 0.3 1 Collector current IC (A) 3 2004-07-07 2SC2655 VBE (sat) - IC IC - VBE 2.0 Common emitter 3 Common emitter IC/IB = 20 IC (A) VCE = 2 V Ta = -55C 1 Collector current Base-emitter saturation voltage VBE (sat) (V) 5 0.5 25 0.3 100 0.1 0.01 0.03 0.1 0.3 1.5 1.0 Ta = 100C 25 -55 0.5 1 Collector current IC (A) 0 0 0.4 0.8 1.2 Base-emitter voltage Safe Operating Area (V) 1000 IC max (pulsed)* (mW) 1 ms* IC max (continuous) 1 100 ms* 0.5 0.3 1 s* DC operation Ta = 25C 0.1 0.05 0.03 *: Single nonrepetitive pulse Ta = 25C Curves must be derated linearly VCEO max 0.5 1 3 10 Collector-emitter voltage 30 VCE 600 400 200 0 0 with increase in temperature. 0.01 0.2 800 PC 10 ms* Collector power dissipation IC (A) Collector current VBE 2.0 PC - Ta 5 3 1.6 40 80 120 Ambient temperature 100 160 Ta 200 240 (C) (V) 4 2004-07-07 2SC2655 RESTRICTIONS ON PRODUCT USE 030619EAA * The information contained herein is subject to change without notice. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 5 2004-07-07