VOLTAGE RANGE 50 to 600 Volts CURRENT 2.0 Ampere
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
EFM201L
THRU
EFM207L
SMBL
MAXIMUM RATINGS
(@ TA=25
OC unless otherwise noted)
ELECTRICAL CHARACTERISTICS
(@TA=25
OC unless otherwise noted)
Dimensions in inches and (millimeters)
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
at T
A
= 55
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
T
Typical Thermal Resistance (Note 4)
ypical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
DC
I
O
I
FSM
C
RqJA
RqJL
J
T
J
, T
STG
V
RMS
EFM201L EFM202L EFM203L EFM204L EFM205L EFM206L EFM207L
EFM201L EFM202L EFM203L EFM204L EFM205L EFM206L EFM207L
UNITS
50 150 300
Volts
Volts
Volts
Amps
35
50
100
70
100
420
600
105
150
210
300
600
280
400
400
2.0
75
75
20
75
25
30 20
-55 to + 150
Amps
pF
0
C
0
C/W
200
140
200
NOTES : 1. Reverse Re
4. Thermal Resistance : Mounted on PCB.
covery Test Conditions: IF = 0.5A, IR = -1.0A, IRR = -0.25A
2. Measured at 1 MHZ and applied reverse voltage of 4.0 volts
2006-12
at Rated DC Blocking Voltage
@T
A
= 25
o
C
@T
A
= 100
o
C
CHARACTERISTICS
Maximum Reverse Recovery Time (Note 1)
V
F
SYMBOL
I
R
trr
UNITS
0.95 1.25 1.50
5.0
100
35 50
mAmps
nSec
Maximum DC Reverse Current
Maximum Instantaneous Forward Voltage at 2.0A DC Volts
3. “Fully ROHS compliant”, “100% Sn plating (Pb-free)”.
FEATURES
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.098 gram
* Epoxy : Device has UL flammability classification 94V-0
MECHANICAL DATA
SURFACE MOUNT GLASS PASSIVATED
SUPER FAST SILICON RECTIFIER
0.083 (2.11)
0.077 (1.96)
0.155 (3.94)
0.130 (3.30)
0.180 (4.57)
0.160 (4.06)
0.085 (2.15)
0.061 (1.55)
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
0.012 (0.305)
0.006 (0.152)
0.008 (0.203)
0.004 (0.102)
AMBIENT TEMPERATURE, (OC)
INSTANTANEOUS REVERSE CURRENT, (uA)
25
2.5
00
2.0
1.5
1.0
0.5
7550 175100 125 150
RATING AND CHARACTERISTICS CURVES ( EFM201L THRU EFM207L )
FIG.2 TYPICAL FORWARD CURRENT
DERATING CURVE
FIG.1 TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
AVERAGE FORWARD CURRENT, (A)
0
0.1
10
1.0
1000
100
6020 40 80 100 120 140
FIG.3 TYPICAL REVERSE
CHARACTERISTICS
trr
+0.5A
50 W
NONINDUCTIVE
10 W
NONINDUCTIVE
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR 14/1 ns/cm
NOTES:
1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
D.U.T
25 Vdc
(approx)
( - )
( - )
( + )
( + )
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
T
A
= 25 OC
T
A
= 75 OC
T
A
= 100 OC
NUMBER OF CYCLES AT 60Hz
PEAK FORWARD SURGE CURRENT, (A)
INSTANTANEOUS FORWARD VOLTAGE, (V)
1
10
30
20
50
100
200
INSTANTANEOUS FORWARD CURRENT, (A)
1.0
0.3
0.1
0.03
0.01
3.0
10
20
105 50 100
2.52.01.51.00.50 3.0 3.5
RATING AND CHARACTERISTICS CURVES ( EFM201L THRU EFM207L )
FIG.4 TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG.5 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
REVERSE VOLTAGE, (V)
JUNCTION CAPACITANCE, (pF)
4
6
40
20
10
60
200
100
0.20.1
2
10.4 21.0 4 10 20 40 100
FIG.6 TYPICAL JUNCTION CAPACITANCE
8.3ms Single Half Sine-Wave
(JEDED Method)
Pulse Width=300uS
1% Duty Cycle
T
J
= 25 OC
T
J
= 25
O
C
EFM201L~EFM204L
EFM205L~EFM206L
EFM207L
EFM205L~EFM207L
EFM201L~EFM204L
Mounting Pad Layout
Dimensions in inches and (millimeters)
0.083MIN.
(2.10 MIN.)
0.220
0.106 MAX.
(2.69 MAX.)
0.050 MIN.
(1.27 MIN.)
(
5.58) REF
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specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liabi-
lity for any errors or inaccuracies. Data sheet specifications and its information
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