Semiconductor Components Industries, LLC, 2004
August, 2004 − Rev. 2 1Publication Order Number:
NTD20N03L27/D
NTD20N03L27
Power MOSFET
20 Amps, 30 Volts, N−Channel DPAK
This logic level vertical power MOSFET is a general purpose part
that provides the “best of design” available today in a low cost power
package. Avalanche energy issues make this part an ideal design in.
The drain−to−source diode has a ideal fast but soft recovery.
Features
•Pb−Free Packages are Available
•Ultra−Low RDS(on), Single Base, Advanced Technology
•SPICE Parameters Available
•Diode is Characterized for use in Bridge Circuits
•IDSS and VDS(on) Specified at Elevated Temperatures
•High Avalanche Energy Specified
•ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0
Typical Applications
•Power Supplies
•Inductive Loads
•PWM Motor Controls
•Replaces MTD20N03L in many Applications
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage VDSS 30 Vdc
Drain−to−Gate Voltage (RGS = 1.0 M) VDGR 30 Vdc
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tp10 ms) VGS
VGS 20
24
Vdc
Drain Current
− Continuous @ TA = 25C
− Continuous @ TA = 100C
− Single Pulse (tp10 s)
ID
ID
IDM
20
16
60
Adc
Apk
Total Power Dissipation @ TA = 25C
Derate above 25°C
Total Power Dissipation @ TC = 25°C (Note 1)
PD74
0.6
1.75
W
W/°C
W
Operating and Storage Temperature Range TJ, Tstg −55 to
150 °C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 30 Vdc, VGS = 5 Vdc, L = 1.0 mH,
IL(pk) = 24 A, VDS = 34 Vdc)
EAS 288 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 1)
RJC
RJA
RJA
1.67
100
71.4
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds TL260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended
pad size and repetitive rating; pulse width limited by maximum junction
temperature.
20 A, 30 V, RDS(on) = 27 m
N−Channel
D
S
G
1
Gate 3
Source
2
Drain
4
Drain
DPAK
CASE 369C
STYLE 2
20N3L = Device Code
A = Assembly Location
Y = Year
WW = Work Week
123
4
DPAK−3
CASE 369D
STYLE 2
123
4
MARKING
DIAGRAMS
AYWW
20
N3L
1
Gate 3
Source
2
Drain
4
Drain
AYWW
20
N3L
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
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2
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 2)
(VGS = 0 Vdc, ID = 250 Adc)
Temperature Coefficient (Positive)
V(BR)DSS 30
−−
43 −
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
(VDS = 30 Vdc, VGS = 0 Vdc, TJ =150°C)
IDSS −
−−
−10
100
Adc
Gate−Body Leakage Current (VGS = ±20 Vdc, VDS = 0 Vdc) IGSS − − ±100 nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Note 2)
(VDS = VGS, ID = 250 Adc)
Threshold Temperature Coefficient (Negative)
VGS(th) 1.0
−1.6
5.0 2.0
−
Vdc
mV/°C
Static Drain−to−Source On−Resistance (Note 2)
(VGS = 4.0 Vdc, ID = 10 Adc)
(VGS = 5.0 Vdc, ID = 10 Adc)
RDS(on) −
−28
23 31
27
m
Static Drain−to−Source On−Voltage (Note 2)
(VGS = 5.0 Vdc, ID = 20 Adc)
(VGS = 5.0 Vdc, ID = 10 Adc, TJ = 150°C)
VDS(on) −
−0.48
0.40 0.54
−
Vdc
Forward Transconductance (Note 2) (VDS = 5.0 Vdc, ID = 10 Adc) gFS − 21 − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V 25 Vdc V 0 Vdc
Ciss − 1005 1260 pF
Output Capacitance (VDS = 25 Vdc, VGS = 0 Vdc,
f=10MHz)
Coss − 271 420
Transfer Capacitance
f
=
1
.
0
MH
z
)
Crss − 87 112
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
(V 20 Vd I 20 Ad
td(on) − 17 25 ns
Rise Time (VDD = 20 Vdc, ID = 20 Adc,
VGS =50Vdc
tr− 137 160
Turn−Off Delay Time VGS = 5.0 Vdc,
R
G
= 9.1
)
(
Note 2
)
td(off) − 38 45
Fall Time
R
G =
9
.
1
)
(Note
2)
tf− 31 40
Gate Charge
(V 48 Vdc I 15 Adc
QT− 13.8 18.9 nC
GaeC age
(VDS = 48 Vdc, ID = 15 Adc,
VGS = 10 Vdc) (Note 2)
Q1− 2.8 −
V
GS =
10
Vd
c
)
(N
o
t
e
2)
Q2− 6.6 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (IS = 20 Adc, VGS = 0 Vdc) (Note 2)
(IS = 20 Adc, VGS = 0 Vdc, TJ = 125°C)
VSD −
−1.0
0.9 1.15
−
Vdc
Reverse Recovery Time trr − 23 − ns
e e se eco e y e
(IS =15 Adc, VGS = 0 Vdc, ta− 13 −
s
(IS
15
Adc
,
VGS
0
Vdc
,
dlS/dt = 100 A/s) (Note 2) tb− 10 −
Reverse Recovery Stored Charge
S
QRR − 0.017 − C
2. Pulse Test: Pulse Width ≤300 s, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
ORDERING INFORMATION
Device Package Shipping†
NTD20N03L27 DPAK 75 Units/Rail
NTD20N03L27G DPAK
(Pb−Free) 75 Units/Rail
NTD20N03L27−1 DPAK−3 75 Units/Rail
NTD20N03L27−1G DPAK
(Pb−Free) 75 Units/Rail
NTD20N03L27T4 DPAK 2500 Tape & Reel
NTD20N03L27T4G DPAK
(Pb−Free) 2500 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTD20N03L27
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3
1.6
1.4
1
1.2
0.8
0.6
10
1
100
1000
24
16
28
12
20
0
40
0.015
0
30
1
15
0.40.2
−ID, DRAIN CURRENT (AMPS)
0
−VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
ID, DRAIN CURRENT (AMPS)
2
0.04
0.035
0.03
0.025
221512
0.02
0.015
0.01
0.005
05252832
Figure 3. On−Resistance vs. Drain Current and
Temperature
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
ID, DRAIN CURRENT (AMPS)
Figure 5. On−Resistance Variation with
Temperature
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
−IDSS, LEAKAGE (nA)
40
−50 75500−25 100 150
0.5 1.5 5
028322420 3616 40
0.02
0.01
0.025
0.03
012159618330
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
5
10
20
25
35
1.4 2
4
0.6 0.8 1.2 1.6 1.8 1 2 2.5 3 3.5 4 4.5
818 3538
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
RDS(on), DRAIN−TO−SOURCE RESISTANCE ()
4812
12525 21 24 27
VGS = 10 V
VGS = 8 V
VGS = 6 V
VGS = 5 V
VGS = 4.5 V
VGS = 4 V
VGS = 3.5 V
VGS = 3 V
VGS = 2.5 V 8
32
36
TJ = 25°C
TJ = 100°C
TJ = −55°C
VDS > = 10 V
VGS = 5 V
TJ = 25°C
TJ = 100°C
TJ = −55°C
VGS = 5 V
VGS = 10 V
TJ = 25°C
ID = 10 A
VGS = 5 V
TJ = 100°C
TJ = 125°C
VGS = 0 V
TJ = 25°C
NTD20N03L27
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4
4
350
300
200
250
150
100
0
8
4
10
2
6
0
12
14
10
1500
824
C, CAPACITANCE (pF)
0
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VGS, GATE−TO−SOURCE VOLTAGE (V)
1
1000
100
10
10
1100
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
RG, GATE RESISTANCE ()
Figure 10. Diode Forward Voltage vs. Current
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
Figure 11. Maximum Avalanche Energy vs.
Starting Junction Temperature
TJ, STARTING JUNCTION TEMPERATURE (°C)
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
2500
25 1251007550 150
06 14
0.0 0.4 0.50.30.2 0.60.1 1.0
10
16
8
12
0
18
20
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
500
1000
200
14 258 6 2 0 6 10 12 16 18 20 23 2 4 8 10 12
6
4
2
0.7 0.8 0.9
50
VGS − VDS
Ciss
Coss
Crss
Q1Q2
Q
ID = 20 A
TJ = 25°C
VGS
VDS = 20 V
ID = 20 A
VGS = 5.0 V
TJ = 25°C
tr
tf
td(off)
td(on)
VGS = 0 V
TJ = 25°C
ID = 24 A
NTD20N03L27
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5
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE O
D
A
K
B
R
V
S
FL
G
2 PL
M
0.13 (0.005) T
E
C
U
J
H
−T− SEATING
PLANE
Z
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.235 0.245 5.97 6.22
B0.250 0.265 6.35 6.73
C0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E0.018 0.023 0.46 0.58
F0.037 0.045 0.94 1.14
G0.180 BSC 4.58 BSC
H0.034 0.040 0.87 1.01
J0.018 0.023 0.46 0.58
K0.102 0.114 2.60 2.89
L0.090 BSC 2.29 BSC
R0.180 0.215 4.57 5.45
S0.025 0.040 0.63 1.01
U0.020 −−− 0.51 −−−
V0.035 0.050 0.89 1.27
Z0.155 −−− 3.93 −−−
123
4
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
5.80
0.228
2.58
0.101
1.6
0.063
6.20
0.244 3.0
0.118
6.172
0.243
mm
inches
SCALE 3:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
NTD20N03L27
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6
PACKAGE DIMENSIONS
DPAK−3
CASE 369D−01
ISSUE B
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
123
4
V
SA
K
−T−
SEATING
PLANE
R
B
F
GD3 PL
M
0.13 (0.005) T
C
E
JH
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A0.235 0.245 5.97 6.35
B0.250 0.265 6.35 6.73
C0.086 0.094 2.19 2.38
D0.027 0.035 0.69 0.88
E0.018 0.023 0.46 0.58
F0.037 0.045 0.94 1.14
G0.090 BSC 2.29 BSC
H0.034 0.040 0.87 1.01
J0.018 0.023 0.46 0.58
K0.350 0.380 8.89 9.65
R0.180 0.215 4.45 5.45
S0.025 0.040 0.63 1.01
V0.035 0.050 0.89 1.27
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
Z
Z0.155 −−− 3.93 −−−
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NTD20N03L27/D
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