BL Galaxy Electrical Production specification
Silicon Epitaxial Planar Transistor MMST2222A
Document number: BL/SSSTF006 www.galaxycn.com
Rev.A 1
FEATURES
Pb
Lead-free
z Epitaxial planar die construction.
z Complements the MMST2907A.
z Ultra-small surface mount package.
APPLICATIONS
z NPN Silicon Epitaxial Planar Transistor.
SOT-323
ORDERING INFORMATION
Type No. Marking Package Code
MMST2222A K3P SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter Value Units
VCBO Collector-Base Voltage 75 V
VCEO Collector-Emitter Voltage 40 V
VEBO Emitter-Base Voltage 6 V
ICCollector Current -Continuous 600 mA
PCCollector Dissipation 200 mW
Tj,Tstg Junction and Storage Temperature -55~150 ℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified