Rev.1.00, Mar.11.2004, page 1 of 6
HZS-N Seri es
Silicon Epitaxial Planar Zener Diode for Stabilized Power Supply
REJ03G0185-0100Z
(Previous : AD E- 208-1 24)
Rev.1.00
Mar.11.2004
Features
• Low leakage, low zener impedance and maximum power dissipation of 400 mW are ideally suited for stabilized
power supply, etc.
• Wide spectrum from 1.88 V through 38.52 V o f zener volt age provide flexible a ppl ication.
• Suitable for 5mm-pitch high sp eed automatic insertion.
Ordering Information
Type No. Mark Package Code
HZS-N Series Type No. MHD
Pin Arrangement
1. Cathode
2. Anode
Cathode band
Type No.
12
2
B
7.5
HZS-N Series
Rev.1.00, Mar.11.2004, page 2 of 6
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Value Unit
Power dissipation Pd 400 mW
Junction temperature Tj 200 °C
Storage temperature Tstg −55 to +175 °C
Electrical Characteristics
(Ta = 25°C)
Zener Voltage Reverse Current Dynamic Resistance
VZ (V)*1 Test
Condition
IR (µA) Test
Condition
rd (Ω) Test
Condition
Type
Grade Min Max IZ (mA) Max VR (V) Max IZ (mA)
B1 1.88 2.10 HZS2.0N B2 2.02 2.20
5 120 0.5 100 5
B1 2.12 2.30 HZS2.2N B2 2.22 2.41
5 120 0.7 100 5
B1 2.33 2.52 HZS2.4N B2 2.43 2.63
5 120 1.0 100 5
B1 2.54 2.75 HZS2.7N B2 2.69 2.91
5 100 1.0 110 5
B1 2.85 3.07 HZS3.0N B2 3.01 3.22
5 50 1.0 120 5
B1 3.16 3.38 HZS3.3N B2 3.32 3.53
5 20 1.0 120 5
B1 3.47 3.68 HZS3.6N B2 3.62 3.83
5 10 1.0 120 5
B1 3.77 3.98 HZS3.9N B2 3.92 4.14
5 5 1.0 120 5
B1 4.05 42.6
B2 4.20 4.40
HZS4.3N
B3 4.34 4.53
5 5 1.0 120 5
B1 4.47 4.65
B2 4.59 4.77
HZS4.7N
B3 4.71 4.91
5 5 1.0 100 5
B1 4.85 5.03
B2 4.97 5.18
HZS5.1N
B3 5.12 5.35
5 5 1.5 70 5
B1 5.29 5.52
B2 5.46 5.70
HZS5.6N
B3 5.64 5.88
5 5 2.5 40 5
B1 5.81 6.06
B2 5.99 6.24
HZS6.2N
B3 6.16 6.40
5 5 3.0 30 5
B1 6.32 6.59
B2 6.52 6.79
HZS6.8N
B3 6.70 6.97
5 2 3.5 25 5
Note: 1. Tested with pulse (PW = 40 ms)
HZS-N Series
Rev.1.00, Mar.11.2004, page 3 of 6
(Ta = 25°C)
Zener Voltage Reverse Current Dynamic Resistance
VZ (V)*1 Test
Condition
IR (µA) Test
Condition
rd (Ω) Test
Condition
Type
Grade Min Max IZ (mA) Max VR (V) Max IZ (mA)
B1 6.88 7.19
B2 7.11 7.41
HZS7.5N
B3 7.33 7.64
5 0.5 4.0 25 5
B1 7.56 7.90
B2 7.82 8.15
HZS8.2N
B3 8.07 8.41
5 0.5 5.0 20 5
B1 8.33 8.70
B2 8.61 8.99
HZS9.1N
B3 8.89 9.29
5 0.5 6.0 20 5
B1 9.19 9.59
B2 9.48 9.90
HZS10N
B3 9.82 10.30
5 0.2 7.0 20 5
B1 10.18 10.63
B2 10.50 10.95
HZS11N
B3 10.82 11.26
5 0.2 8.0 20 5
B1 11.13 11.63
B2 11.50 11.92
HZS12N
B3 11.80 12.30
5 0.2 9.0 25 5
B1 12.18 12.71
B2 12.59 13.16
HZS13N
B3 13.03 13.62
5 0.2 10 25 5
B1 13.48 14.09
B2 13.95 14.56
HZS15N
B3 14.42 15.02
5 0.2 11 25 5
B1 14.87 15.50
B2 15.33 15.96
HZS16N
B3 15.79 16.50
5 0.2 12 25 5
B1 16.34 17.06
B2 16.90 17.67
HZS18N
B3 17.51 18.30
5 0.2 13 30 5
B1 18.14 18.96
B2 18.80 19.68
HZS20N
B3 19.52 20.45
5 0.2 15 30 5
B1 20.23 21.08
B2 20.76 21.65
B3 21.22 22.09
HZS22N
B4 21.68 22.61
5 0.2 17 30 5
B1 22.26 23.12
B2 22.75 23.73
B3 23.29 24.27
HZS24N
B4 23.81 24.81
5 0.2 19 35 5
B1 24.26 25.52
B2 24.97 26.26
B3 25.63 26.95
HZS27N
B4 26.29 27.64
5 0.2 21 45 5
Note: 1. Tested with pulse (PW = 40 ms)
HZS-N Series
Rev.1.00, Mar.11.2004, page 4 of 6
(Ta = 25°C)
Zener Voltage Reverse Current Dynamic Resistance
VZ (V)*1 Test
Condition
IR (µA) Test
Condition
rd (Ω) Test
Condition
Type
Grade Min Max IZ (mA) Max VR (V) Max IZ (mA)
B1 26.99 28.39
B2 27.70 29.13
B3 28.36 29.82
HZS30N
B4 29.02 30.51
5 0.2 23 55 5
B1 29.68 31.22
B2 30.32 31.88
B3 30.90 32.50
HZS33N
B4 31.49 33.11
5 0.2 25 65 5
B1 32.14 33.79
B2 32.79 34.49
B3 33.40 35.13
HZS36N
B4 34.01 35.77
5 0.2 27 75 5
B1 34.68 36.47
B2 35.36 37.19
B3 36.00 37.85
HZS39N
B4 36.63 38.52
5 0.2 30 85 5
Notes: 1. Tested with pulse (PW = 40 ms).
2. Type No. is as follows: HZS2.0NB1, HZS2.0NB2, ••• HZS39NB4.
HZS-N Series
Rev.1.00, Mar.11.2004, page 5 of 6
Main Characteristic
0 5 10 15 20 25 30 35 40
50
40
30
20
10
0
−10
−20
−30
−40
−50 200150100500
2.5 mm
3 mm
l
l
=
5 mm
l
=
10 mm
(Publication value)
Zener Voltage Temperature Coefficient γ
Z
(mV/°C)
%/°C
mV/°C
Fig.2 Temperature Coefficient vs. Zener voltage
Zener Voltage V
Z
(V)
0.10
0.08
0.06
0.04
0.02
−0.02
−0.04
−0.06
−0.08
−0.10
Zener Voltage Temperature Coefficient γ
Z
(%/°C)
500
400
300
200
100
0
Power Dissipation Pd (mW)
Printed circuit board
100
×
180
×
1.6t mm
Material: paper phenol
Fig.3 Power Dissipation vs. Ambient Temperature
Ambient Temperature Ta (°C)
0
10
8
6
4
2
04 8 12 16 20 24 28 32 4036
HZS13N
HZS15N
HZS18N
HZS2.0N
HZS20N
HZS22N
HZS36N
HZS39N
HZS30N
HZS2.4N
HZS3.0N
HZS3.6N
HZS4.3N
HZS5.1N
HZS6.2N
HZS7.5N
HZS8.2N
HZS9.1N
HZS10N
HZS11N
HZS12N
HZS16N
HZS24N
HZS27N
HZS33N
HZS6.8N
0
Fig.1 Zener current vs. Zener voltage
Zener Voltage V
Z
(V)
Zener Current I
Z
(mA)
HZS-N Series
Rev.1.00, Mar.11.2004, page 6 of 6
Package Dimensions
26.0 Min 2.4 Max
2.0
0.4
φ
φ
26.0 Min
Package Code
JEDEC
JEITA
Mass
(reference value)
MHD
Conforms
—
0.084 g
As of January, 2003
Unit: mm
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