HiP247™
123
AM01475v1_noZen
D(2, TAB)
G(1)
S(3)
Features
• AEC-Q101 qualified
• Very tight variation of on-resistance vs. temperature
• Very high operating temperature capability (TJ = 200 °C)
• Very fast and robust intrinsic body diode
• Low capacitance
Applications
• Motor drives
• EV chargers
• High voltage DC-DC converters
• Switch mode power supplies
Description
This silicon carbide Power MOSFET is produced exploiting the advanced, innovative
properties of wide bandgap materials. This results in unsurpassed on-resistance per
unit area and very good switching performance almost independent of temperature.
The outstanding thermal properties of the SiC material, combined with the device’s
housing in the proprietary HiP247™ package, allows designers to use an industry-
standard outline with significantly improved thermal capability. These features render
the device perfectly suitable for high-efficiency and high power density applications.
Product status link
SCT10N120AG
Product summary
Order code SCT10N120AG
Marking SCT10N120AG
Package HiP247™
Packing Tube
Automotive-grade silicon carbide Power MOSFET 1200 V, 12 A, 520 mΩ
(typ., TJ = 150 °C) in an HiP247™ package
SCT10N120AG
Datasheet
DS12509 - Rev 2 - March 2019
For further information contact your local STMicroelectronics sales office.
www.st.com
1Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage 1200 V
VGS Gate-source voltage -10 to 25 V
IDDrain current (continuous) at TC = 25 °C 12 A
IDDrain current (continuous) at TC = 100 °C 10 A
IDM (1) Drain current (pulsed) 24 A
PTOT Total power dissipation at TC = 25 °C 150 W
Tstg Storage temperature range
-55 to 200
°C
TjOperating junction temperature range °C
1. Pulse width limited by safe operating area.
Table 2. Thermal data
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case 1.17 °C/W
Rthj-amb Thermal resistance junction-ambient 40 °C/W
SCT10N120AG
Electrical ratings
DS12509 - Rev 2 page 2/14
2Electrical characteristics
(TCASE = 25 °C unless otherwise specified).
Table 3. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS Drain-source breakdown
voltage VGS = 0 V, ID = 1 mA 1200 V
IDSS Zero gate voltage drain
current
VDS = 1200 V, VGS = 0 V 10 µA
VDS = 1200 V, VGS = 0 V, TJ = 200 °C
(1) 100 µA
IGSS Gate-body leakage current VDS = 0 V, VGS = -10 to 25 V 100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 1.8 3.5 V
RDS(on) Static drain-source on-
resistance
VGS = 20 V, ID = 6 A 500 690 mΩ
VGS = 20 V, ID = 6 A,
TJ = 150 °C 520 mΩ
VGS = 20 V, ID = 6 A,
TJ = 200 °C 580 mΩ
1. Defined by design, not subject to production test.
Table 4. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
Ciss Input capacitance
VDS = 400 V, f = 1 MHz,
VGS = 0 V
- 290 - pF
Coss Output capacitance - 30 - pF
Crss Reverse transfer capacitance - 9 - pF
QgTotal gate charge
VDD = 800 V, ID = 6 A,
VGS = 0 to 20 V
- 22 - nC
Qgs Gate-source charge - 3 - nC
Qgd Gate-drain charge - 10 - nC
RgGate input resistance f=1 MHz, ID=0 A - 8 - Ω
Table 5. Switching energy (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
Eon Turn-on switching energy VDD = 800 V, ID = 6 A
RG= 10 Ω, VGS = -5 to 20 V
- 90 - µJ
Eoff Turn-off switching energy - 30 - µJ
Eon Turn-on switching energy VDD = 800 V, ID = 6 A
RG= 10 Ω, VGS = -5 to 20 V
TJ= 150 °C
- 104 - µJ
Eoff Turn-off switching energy - 33 - µJ
SCT10N120AG
Electrical characteristics
DS12509 - Rev 2 page 3/14
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on) Turn-on delay time
VDD = 800 V, ID = 6 A,
RG = 10 Ω, VGS = -5 to 20 V
- 7 - ns
tfFall time - 17 - ns
td(off) Turn-off delay time - 14 - ns
trRise time - 12 - ns
Table 7. Reverse SiC diode characteristics
Symbol Parameter Test conditions Min Typ. Max Unit
VSD Diode forward voltage IF = 6 A, VGS = 0 V - 4.3 - V
trr Reverse recovery time
ISD = 6 A, di/dt = 2000 A/µs
VDD = 800 V, TJ=150 °C
- 16 - ns
Qrr Reverse recovery charge - 107 - nC
IRRM Reverse recovery current - 12 - A
SCT10N120AG
Electrical characteristics
DS12509 - Rev 2 page 4/14
2.1 Electrical characteristics (curves)
Figure 1. Safe operating area
GIPG230520161114SOA
10 1
10 0
10 -1
10 -1 10 010 110 210 3
I D
(A)
V DS (V)
t p =100 µs
t p =1 ms
t p =10 ms
T j ≤ 200 °C
T c = 25°C
single pulse
Operation in this area is
limited by R DS(on)
Figure 2. Thermal impedance
GIPG230520161115ZTH
0.8
0.6
0.4
0.2
0
10 -6 10 -5 10 -4 10 -3 10 -2 10 -1
K
t p (s)
Figure 3. Output characteristics (TJ= 25 °C)
GIPG230520161115OCH_25
10
8
6
4
2
00 2 4 6 8 10 12
I D
(A)
V DS (V)
V GS =6 V
V GS =10 V
V GS =12 V
V GS = 20 V
V GS =14 V
V GS =16 V
Figure 4. Output characteristics (TJ= 150 °C)
GIPG230520161116OCH_150
10
8
6
4
2
00 2 4 6 8 10 12
I D
(A)
V DS (V)
V GS =6 V
V GS =10 V
V GS =12 V
V GS =14 V
V GS =16, 20 V
SCT10N120AG
Electrical characteristics (curves)
DS12509 - Rev 2 page 5/14
Figure 5. Output characteristics (TJ= 200 °C)
GIPG230520161116OCH_200
10
8
6
4
2
00 2 4 6 8 10 12
I D
(A)
V DS (V)
V GS =6 V
V GS =10 V
V GS =12 V
V GS =14,16, 20 V
Figure 6. Transfer characteristics
GIPG230520161117TCH
10
8
6
4
2
00 4 8 12 16
I D
(A)
V GS (V)
V DS = 12 V
T J = 150 °C
T J = 25 °C
Figure 7. Power dissipation
GIPG230520161119PD
150
120
90
60
30
0
-25 25 75 125 175
P TOT
(W)
T C (°C)
Figure 8. Gate charge vs gate-source voltage
GIPG230520161121QVG
20
16
12
8
4
00 4 8 12 16 20
V GS
(V)
Q g (nC)
V DD = 800 V
I D = 6 A
Figure 9. Capacitance variations
GIPG230520161122CVR
10 2
10 1
10 0
10 -1 10 010 110 2
C
(pF)
V DS (V)
C ISS
C OSS
C RSS
f = 1 MHz
Figure 10. Switching energy vs. drain current
GIPG230520161127SWEC
320
240
160
80
00 4 8 12
E
(µJ)
I D (A)
E tot
E on
E off
V DD = 800 V
R G = 10 Ω
V GS = -5 to 20 V
SCT10N120AG
Electrical characteristics (curves)
DS12509 - Rev 2 page 6/14
Figure 11. Switching energy vs. junction temperature
GIPG230520161131SWET
120
80
40
00 50 100 150
E
(µJ)
T J (°C)
E tot
E on
E off
V DD = 800 V
R G = 10 Ω
V GS = -5 to 20 V
I D = 6 A
Figure 12. Normalized V(BR)DSS vs. temperature
GIPG230520161133BDV
1.04
1.02
1.00
0.98
0.96
0.94
-75 -25 25 75 125 175
V (BR)DSS
(norm.)
T j (°C)
I D = 1 mA
Figure 13. Normalized gate threshold voltage vs.
temperature
GIPG230520161149VTH
1.4
1.2
1.0
0.8
0.6
0.4
-75 -25 25 75 125 175
V GS(th)
(norm.)
T j (°C)
I D = 250 µA
Figure 14. Normalized on-resistance vs. temperature
GIPG230520161134RON
1.2
1.1
1.0
0.9
0.8
0.7
25 75 125 175
R DS(on)
(norm.)
T j (°C)
V GS = 20 V
Figure 15. Body diode characteristics (TJ= -50 °C)
GIPG230520161143BDC_-50
-2
-4
-6
-8
-10
-12
-8 -6 -4 -2
I D (A)
V GS = -5 V
V GS = -2 V
V GS = 0 V
V DS (V)
Figure 16. Body diode characteristics (TJ= 25 °C
GIPG230520161146BCD_25
-2
-4
-6
-8
-10
-12
-8 -6 -4 -2
V GS = -5 V
I D (A)
V GS = -2 V
V GS = 0 V
V DS (V)
SCT10N120AG
Electrical characteristics (curves)
DS12509 - Rev 2 page 7/14
Figure 17. Body diode characteristics (TJ= 150 °C)
GIPG230520161151BDC_150
-2
-4
-6
-8
-10
-12
-8 -6 -4 -2
V GS = -5 V
I D (A)
V GS = -2 V
V GS = 0 V
V DS (V)
Figure 18. 3rd quadrant characteristics (TJ= -50 °C)
GIPG230520161155QC_-50
-2
-4
-6
-8
-10
-12
-4 -3 -2 -1
VGS = 15 V
V DS (V)
I D(A)
VGS =10 V
V GS =0 V
VGS =5 V
Figure 19. 3rd quadrant characteristics (TJ= 25 °C)
GIPG230520161223QC_25
-2
-4
-6
-8
-10
-12
-4 -3 -2 -1
VGS = 15 V
VDS (V)
ID(A)
VGS =10 V
VGS =0 V
VGS =5 V
Figure 20. 3rd quadrant characteristics (TJ= 150 °C)
GIPG230520161225QC_150
-2
-4
-6
-8
-10
-12
-4 -3 -2 -1
VGS = 15 V
V DS (V)
I D
(A)
VGS =10 V
V GS =0 V
VGS =5 V
SCT10N120AG
Electrical characteristics (curves)
DS12509 - Rev 2 page 8/14
3Test circuits
Figure 21. Switching test waveforms for transition times
GIPD101020141511FSR
Figure 22. Clamped inductive switching waveform
VDS
VDS On
td (Off) tr
tOff
90%
90%
tOn
td (On) tf
VGS
VGS Off
V
GS On
VDS Off
10%
10%
90%
10%
GIPD101020141502FSR
SCT10N120AG
Test circuits
DS12509 - Rev 2 page 9/14
4Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
4.1 HiP247 package information
Figure 23. HiP247™ package outline
8581091_2
SCT10N120AG
Package information
DS12509 - Rev 2 page 10/14
Table 8. HiP247™ package mechanical data
Dim.
mm
Min. Typ. Max.
A 4.85 5.00 5.15
A1 2.20 2.60
A2 1.90 2.00 2.10
b 1.00 1.40
b1 2.00 2.40
b2 3.00 3.40
c 0.40 0.80
D 19.85 20.00 20.15
E 15.45 15.60 15.75
E3 1.45 1.65
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.30 18.50 18.70
P 3.55 3.65
Q 5.65 5.95
S 5.30 5.50 5.70
SCT10N120AG
HiP247 package information
DS12509 - Rev 2 page 11/14
Contents
1Electrical ratings ..................................................................2
2Electrical characteristics...........................................................3
2.1 Electrical characteristics (curves) .................................................5
3Test circuits .......................................................................9
4Package information..............................................................10
4.1 HiP247 package information ....................................................10
Revision history .......................................................................12
SCT10N120AG
Contents
DS12509 - Rev 2 page 13/14
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SCT10N120AG
DS12509 - Rev 2 page 14/14
