IXFN32N120P PolarTM HiPerFETTM Power MOSFET VDSS = 1200V ID25 = 32A RDS(on) 310m 300ns trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol miniBLOC E153432 Test Conditions Maximum Ratings VDSS VDGR TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M VGSS VGSM S 1200 1200 V V Continuous Transient 30 40 V V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 32 100 A A IA TC = 25C 16 A EAS TC = 25C 2 J dv/dt IS IDM, VDD VDSS, TJ 150C 20 V/ns PD TC = 25C 1000 W -55 ... +150 150 -55 ... +150 C C C 300 260 C C 2500 3000 V~ V~ 1.5/13 1.3/11.5 Nm/lb.in. Nm/lb.in. 30 g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s VISOL 50/60 Hz, RMS IISOL 1mA Md Mounting Torque Terminal Connection Torque t = 1 minute t = 1 second Weight G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal. Features z z z z z z z International Standard Package miniBLOC, with Aluminium Nitride Isolation Isolation Voltage 2500 V~ High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) HDMOSTM Process Advantages z Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) z Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 3mA 1200 VGS(th) VDS = VGS, ID = 1mA 3.5 IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS, VGS = 0V RDS(on) VGS = 10V, ID = 0.5 * ID25, Note 1 TJ = 125C z Easy to Mount Space Savings High Power Density V 6.5 V 300 nA 50 5 A mA Applications z z z 310 m z z High Voltage Switch-Mode and Resonant-ModePower Supplies High Voltage Pulse Power Applications High Voltage Discharge Circuits in Lasers Pulsers, Spark Igniters, RF Generators High Voltage DC-DC Converters High Voltage DC-AC Inverters DS99718H(03/10) (c) 2010 IXYS Corporation, All Rights Reserved http://store.iiic.cc/ IXFN32N120P Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 * ID25, Note 1 17 28 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss RGi td(on) tr td(off) tf Gate input resistance Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd SOT-227B (IXFN) Outline S 21 nF 1100 pF 77 pF 0.84 70 ns 62 ns 88 ns 58 ns 360 nC 130 nC 160 nC (M4 screws (4x) supplied) 0.125 C/W RthJC RthCS C/W 0.05 Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM VSD trr QRM IRM Note Characteristic Values Min. Typ. Max. 32 A Repetitive, Pulse Width Limited by TJM 128 A IF = IS, VGS = 0V, Note 1 1.5 V 300 ns IF = 20A, -di/dt = 100A/s 1.9 15 VR= 100V, VGS = 0V C A 1. Pulse test, t 300s, duty cycle, d 2%. IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 http://store.iiic.cc/ 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFN32N120P Fig. 1. Output Characteristics @ T J = 25C Fig. 2. Extended Output Characteristics @ T J = 25C 70 32 VGS = 10V 9V 28 24 50 8V 20 ID - Amperes ID - Amperes VGS = 10V 9V 60 16 12 40 8V 30 20 8 7V 10 4 0 7V 0 0 1 2 3 4 5 6 7 8 9 10 0 5 10 32 25 30 3.0 VGS = 10V 8V 28 VGS = 10V 2.6 R DS(on) - Normalized 24 ID - Amperes 20 Fig. 4. RDS(on) Normalized to ID = 16A Value vs. Junction Temperature Fig. 3. Output Characteristics T J = 125C 20 16 7V 12 8 2.2 I D = 32A 1.8 I D = 16A 1.4 1.0 0.6 6V 4 0 0.2 0 2 4 6 8 10 12 14 16 18 20 22 -50 -25 0 25 VDS - Volts 50 75 100 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 16A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 2.6 35 VGS = 10V 2.4 30 TJ = 125C 2.2 25 2.0 ID - Amperes R DS(on) - Normalized 15 VDS - Volts VDS - Volts 1.8 1.6 20 15 1.4 10 TJ = 25C 1.2 5 1.0 0.8 0 0 10 20 30 40 50 60 70 -50 -25 0 25 50 75 TC - Degrees Centigrade ID - Amperes (c) 2010 IXYS Corporation, All Rights Reserved http://store.iiic.cc/ 100 125 150 IXFN32N120P Fig. 8. Transconductance Fig. 7. Input Admittance 50 70 45 TJ = - 40C 60 40 50 30 TJ = 125C 25C - 40C 25 25C g f s - Siemens ID - Amperes 35 20 40 125C 30 15 20 10 10 5 0 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 9.0 5 10 15 20 VGS - Volts 25 30 35 40 45 50 400 450 500 ID - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 100 16 90 14 VDS = 600V I D = 16A 80 I G = 10mA 12 VGS - Volts IS - Amperes 70 60 50 TJ = 125C 40 10 8 6 TJ = 25C 30 4 20 2 10 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0 50 100 150 VSD - Volts 200 250 300 350 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 100,000 1000 100 Ciss 10,000 25s ID - Amperes Capacitance - PicoFarads RDS(on) Limit 1,000 Coss 100s 10 1ms 1 10ms 100ms 100 TJ = 150C Tc = 25C Single Pulse 0.1 Crss f = 1 MHz 10 DC 0.01 0 5 10 15 20 25 30 35 40 10 VDS - Volts 100 1,000 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. http://store.iiic.cc/ 10,000 IXFN32N120P Fig. 13. Maximum Transient Thermal Impedance 1.000 Fig. 13. Maximum Transient Thermal Impedance 0.300 Z(th)JC - C / W 0.100 0.010 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds (c) 2010 IXYS Corporation, All Rights Reserved IXYS REF: F_32N120P(99) 3-04-10-D http://store.iiic.cc/