2SA1419 / 2SC3649
No.2007-1/5
Features
•Adoption of FBET, MBIT processes.
•High breakdown voltage and large current capacity.
•Ultrasmall size making it easy to provide high-density, small-sized hybrid IC’s.
Specifications ( ) : 2SA1419
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (--)180 V
Collector-to-Emitter Voltage VCEO (--)160 V
Emitter-to-Base Voltage VEBO (--)6 V
Collector Current IC(--)1.5 A
Collector Current (Pulse) ICP (--)2.5 A
Collector Dissipation PC500 mW
Mounted on a ceramic board (250mm
2
✕0.8mm)
1.5 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Marking 2SA1419 : AE
2SC3649 : CE
www.semiconductor-sanyo.com/network
Ordering number : EN2007B
31010CB TK IM / O3103TN (KT)/71598HA (KT)/4277TA, TS
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
SANYO Semiconductors
DATA SHEET
2SA1419 / 2SC3649
PNP / NPN Epitaxial Planar Silicon Transistors
High-Voltage Switching Applications
http://semicon.sanyo.com/en/network
2SA1419 / 2SC3649
No.2007-2/5
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Collector Cutoff Current ICBO VCB=(--)120V, IE=0A (--)1 μA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)1 μA
DC Current Gain hFE1V
CE=(--)5V, IC=(--)100mA 100* 400*
hFE2V
CE=(--)5V, IC=(--)10mA 80
Gain-Bandwidth Product fTVCE=(--)10V, IC=(--)50mA 120 MHz
Output Capacitance Cob VCB=(--)10V, f=1MHz (22)14 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)500mA, IB=(--)50mA
(--200)130
(--500)450 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=(--)500mA, IB=(--)50mA (--)0.85 (--)1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A (--)180 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞(--)160 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10μA, IC=0A (--)6 V
Turn-ON Time ton See specified Test Circuit. (40)40 ns
Storage T ime tstg See specified Test Circuit. (0.7)1.2 μs
Fall T ime tfSee specified Test Circuit. (40)80 ns
*: The 2SA1419 / 2SC3649 are classified by 100mA hFE as follows:
Rank R S T
hFE 100 to 200 140 to 280 200 to 400
Package Dimensions Switching Time Test Circuit
unit : mm (typ)
7007B-004
INPUT
100V
50Ω
RL
100μF 470μF
--5V
IC=10IB1=--10IB2=0.7A
(For PNP, the polarity is reversed)
++
VR
PW=20μs
D.C.≤1%
RB
IB1
IB2
2SA1419 / 2SC3649
No.2007-3/5
IC -- VCE
IC -- VCE IC -- VCE
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
hFE -- IChFE -- IC
Collector Current, IC -- A
DC Current Gain, hFE
Collector Current, IC -- A
DC Current Gain, hFE
IC -- VBE IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
ITR03571
0--2--1 --4--3 --5 214350
0
--0.2
--0.4
--0.6
--0.8
--1.0
--1.2
--1.4
--1.6
--1.8
0
--0.2
--0.6
--0.4
--0.8
--1.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0
0.2
0.6
0.4
0.8
1.0
0
ITR03572
10 20 30 40 500
ITR03574
ITR03573
--
40
--
30
--
50
--
10
--
20
0
--40
mA
--60
mA
--80
mA
--20
mA
--10
mA
--5
mA
--2mA
--1mA
IB=0mA
2SA1419 2SC3649
2SC3649
IB=0mA
IB=0mA
2SA1419
20mA
50mA
30mA
40
mA
10
mA
5mA
2
mA
1mA
--2.5mA
--2.0
mA
--3.0
mA
--3.5
mA
--5.0mA
--4.0
mA
--4.5
mA
--1.5
mA
--1.0
mA
--0.5
mA
IB=0mA
0.5mA
5.0
mA
4.5
mA
2.5mA
3.5
mA
4.0
mA
2.0
mA
3.0mA
1.5
mA
1.0mA
ITR03578
ITR03577
ITR03575
--
5
--
7
--
5
--
7
--
3
--
2
--
5
--
7
--
3
--
2
--
3
--
2
--
0.01
--
0.1
--
1.0
--
0.4
0
--
0.8
--
1.6
--
1.2
0.4
0
0.8
1.6
1.2
10
100
1000
5
7
3
2
5
7
3
2
57732
0.01 0.1 573232
1.0
10
100
1000
5
7
3
2
5
7
3
2
--
0.6
--
0.8
0
--
0.4
--
0.2
--
1.0
--
1.2 0.6 0.8
00.40.2 1.0 1.2
ITR03576
2SA1419
VCE=--5V 2SC3649
VCE=5V
2SA1419
VCE=--5V 2SC3649
VCE=5V
--
25
°C
25°
C
Ta=75
°C
--25°C
25°C
Ta=75
°
C
--25
°C
25°C
Ta=75
°C
--25°C
25°C
Ta=75
°
C
2SA1419 / 2SC3649
No.2007-4/5
fT -- ICCob -- VCB
Collector Current, IC -- A
Gain-Bandwidth Product, fT -- MHz
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
A S O PC -- Ta
Collector Current, IC -- A
Collector-to-Emitter Voltage, VCE -- V
Collector Dissipation, PC -- W
Ambient Temperature, T a
-- °C
VCE(sat) -- ICVCE(sat) -- IC
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
VBE(sat) -- ICVBE(sat) -- IC
Collector Current, IC -- A Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
ITR03580
ITR03579
2
0.01 5730.1 225731.0
2
--
0.01
--
0.1
5773 2
--
1.0
57323 2
0.01 0.1
5773 2 1.0
57323
100
10
2
3
5
7
2
3
5
2
1.0 57310 2573100
10
100
2
3
5
7
3
5
7
--
1000
--
100
2
3
5
7
2
3
2
3
5
7
ITR03581
2
5
7
1000
2
3
5
7
100
3
2
3
ITR03582
2SC3649
IC / IB=10
2SA1419
IC / IB=10
--25°C
25°C
Ta=75
°C
--25°C
25°C
Ta=75°C
2SA1419
2SC3649
2SA1419
2SC3649
2SA1419 / 2SC3649 2SA1419 / 2SC3649
ITR03583
--
1.0
--
10
3
5
7
3
5
7
2
0.01
3
0.1
5
7
5
7
2
3
1.0
5
5
7
2
3
2
7
--
0.01
--
0.1
5732
--
1.0
5732327
0.01 0.1
5732 1.0
573232
1.0
732
1.0
10
5
3
7
2
5
3
7
0
0.2
0.4
0.6
0.8
1.8
1.6
1.4
1.2
1.0
0 20 80 1006040 160140120
ITR03584
ITR03585
Mounted on a ceramic board (250mm
2
✕0.8mm)
No heat sink
710
532327 100
5
ITR03586
1
ms
10
ms
100
m
s
DC operation
For PNP, minus sign is omitted
Single pulse Ta=25°C
Mounted on a ceramic board (250mm
2
✕0.8mm)
2SA1419
IC / IB=10 2SC3649
IC / IB=10
25°C75°C
Ta=--25°C
25°C75°C
Ta=--25°C
2SA1419 / 2SC3649 2SA1419 / 2SC3649
ICP=2.5A
IC=1.5A
For PNP, minus sign is omitted For PNP, minus sign is omitted
2SA1419 / 2SC3649
No.2007-5/5
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or
malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise
to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt
safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not
limited to protective circuits and error prevention circuits for safe design, redundant design, and structural
design.
Upon using the technical information or products described herein, neither warranty nor license shall be granted
with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third
party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party’s
intellectual property rights which has resulted from the use of the technical information and products mentioned
above.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
for volume production.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise,
without the prior written consent of SANYO Semiconductor Co.,Ltd.
PS
This catalog provides information as of March, 2010. Specifications and information herein are subject
to change without notice.
