ky SGS-THOMSON MICROELECTRONICS BYT 01-200 400 FAST RECOVERY RECTIFIER DIODES FAST RECOVERY RECTIFIER = VERY LOW REVERSE RECOVERY TIME = VERY LOW SWITCHING LOSSES = LOW NOISE TURN-OFF SWITCHING SUITABLE APPLICATION F196 m= FREE WHEELING DIODE IN CONVERTERS (Plastic) AND MOTORS CIRCUITS = RECTIFIER IN S.M.P.S. ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit lFRM Repetive Peak Forward Current to < 10us 30 A le (av) Average Forward Current* Ta = 70C 1 A 6=0.5 IFSM Surge non Repetitive Forward Current tp = 10ms 30 A Sinusoidal P Power Dissipation* Ta = 70C 1.33 W Tstg Storage and Junction Temperature Range - 40 to +150 C Tj - 40 to + 150 BYT 01- . Symbol Parameter Unit 200 300 400 Vraru Repetitive Peak Reverse Voltage 200 300 400 Vasu Non Repetitive Peak Reverse Voltage 220 330 440 THERMAL RESISTANCE Symbol Parameter Value Unit Rth j- a) Junction-ambient* 60 C/W * Oninfinite heatsink with 10mm lead length. November 1994 1/5 BYT 01-200 400 ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit IR Tj = 25C Vr = Varo 20 HA Tj = 100C 0.5 mA Ve Tj = 25C IF=1A 1.5 Vv Tj = 100C 1.4 RECOVERY CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit ter Tj = 25C lIF=1A di-/dt = - 15A/us Vr= 30V 55 ns Tj = 25C IF=0.5A Ip=1A Ir = 0.25A 25 TURN-OFF SWITCHING CHARACTERISTICS (Without Series inductance) Symbol Test Conditions Min. Typ. Max. Unit tiRM di-/dt =- 50A/us | Tj = 100C Voc = 200 V lIF=1A 35 50 ns IRM die/dt =- 50A/us | Lp <0.05 yA See figure 12 1.5 2 A To evaluate the conduction losses use the following equations: Ve = 1.05 +0.145 Ir 2/5 P = 1.05 x IF(av) + 0.145 IF*(Rms) ky S68 THOMSON BYT 01-200 400 Figure 1. Maximum average power dissipation versus average forward current. P (Ww) 1.5 5= B= 5= B= 4.0[8= 0.5 0.0 0.2 0.4 0.6 0.8 1.0 Figure 3. Thermal resistance versus lead length. fc/w) Figure 4. Transient thermal impedance junction-ambient for mounting n2 versus pulse duration (L = 10 mm). 6 10? Zz (C/W) 10 41071 1072 ia71 1 10 402 io7 oe -THOMSON ROBLECT RORTES Figure 2. Average forward current versus ambient temperature. I [A} 4.276 Infinite heats Printed circuit 4.0 0.6 0.6 0,4 0.2 0.0 So 100 150 Mounting n1 INFINITE HEATSINK Mounting n2 PRINTED CIRCUIT Test point of tiead Solder ing Figure 5. Peak forward current versus peak forward voltage drop (maximum values). (A) | @ 1; ~ 150C Vtg = 1.05 ry 2 -445 & 102 ib Ty initial = 25C 150% ---~ i 10-4 G BYT 01-200 400 Figure 7. Recovery time versus dir/dt. ter ) Ty = 100 P 96 % confidence 0.04 0.02 digp/dt {A/pa) 0.00. 20 40 80 ao 400 Figure 9. Peak reverse current versus dir/dt. 25 Tpy (A) 90 % confidence Ip=ia 2PTT; = 100 c Ty = 25 C 1.5 Figure 11. Dynamic parameters versus junction temperature. x 300 Ip = 1A dip /dt = -50 A/ps 250 Vp = 30 200 150 100 25 50 75 100 125 150 = ky $8 -THOMSON ROBLECT RORTES Figure 8. Peak forward voltage versus dir/dt. Vep () 80 % confidence Ty = 400 C digp/dt {A/pel Bo 100 0 20 40 6o Figure 10. Recovered charge versus dir/dt (typical values). tot T; 3; = fooec ia-@ dip/dt taps] 1074 4 10 400 500 Figure 12. Non repetitive surge peak current versus number of cycles. {A} 30 Ty inktial = 26 C 35 : 20 i5 10 Number of cycles 4 410 19 09 BYT 01-200 400 PACKAGE MECHANICAL DATA F 126 (Plastic) c note 2 l l l l l I ' ! ' DIMENSIONS REF. Millimeters Inches NOTES Min. Max. Min. Max. 6.05 6.35 0.238 | 0.250 B 26 1.024 OC 2.95 3.05 0.116 | 0.120 @D 0.76 0.86 0.029 | 0.034 E 1.27 0.050 1 - The lead diameter @ D is not controlled over zone E 2 - The minimum axial lengh within which the device may be placed with its leads bent at right angles is 0.59"(15 mm) Cooling method: by convection (method A) Marking: type number Weight: 0.4g Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringementof patents or other rights ofthird parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. 1994 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan - United Kingdom - U.S.A. i SGS-THOMSON 5/5 SF RCRCELECTRORNES