STPS20H100CT/CF/CG/CG-1 HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) 2 x 10 A VRRM Tj 100 V 175C VF (max) 0.64 V A1 K A2 FEATURES AND BENEFITS NEGLIGIBLESWITCHING LOSSES HIGH JUNCTION TEMPERATURE CAPABILITY GOOD TRADE OFF BETWEEN LEAKAGECURRENT AND FORWARD VOLTAGE DROP LOW LEAKAGECURRENT AVALANCHE RATED INSULATED PACKAGE: ISOWATT220AB Insulating Voltage = 2500V(RMS) Capacitance = 45 pF A2 A1 K A2 A1 K ISOWATT220AB STPS20H100CF TO-220AB STPS20H100CT K DESCRIPTION Dual center tap schottky rectifier designed for high frequency miniature Switched Mode Power Supplies such as adaptators and on board DC/DC converters. A2 A1 A1 A2 K D2PAK I2PAK STPS20H100CG STPS20H100CG-1 ABSOLUTE RATINGS (limiting values, per diode) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 100 V IF(RMS) RMS forward current 30 A 10 20 A 250 A 1 3 A A - 65 to + 175 C 175 10000 C V/s IF(AV) Average forward current = 0.5 IFSM Surge non repetitive forward current IRRM IRSM Repetitive peak reverse current Non repetitive peak reverse current T stg Storage temperature range Tj dV/dt * : Tc = 160C TO-220AB D2PAK / I2PAK ISOWATT220AB Tc = 145C per diode per device tp = 10 ms sinusoidal tp = 2 s square F = 1kHz tp = 100 s square Maximum operating junction temperature * Critical rate of rise of reverse voltage 1 dPtot thermal runaway condition for a diode on its own heatsink < Rth(j-a) dTj July 1999 - Ed: 3B 1/7 STPS20H100CT/CF/CG/CG-1 THERMAL RESISTANCES Symbol Parameter 2 Junction to case Rth (j-c) 2 Unit C/W TO-220AB / D PAK / I PAK Per diode 1.6 ISOWATT220AB Per diode 4 2 2 TO-220AB / D PAK / I PAK Total 0.9 ISOWATT220AB Total 3.2 TO-220AB / D PAK / I PAK Coupling 0.15 ISOWATT220AB Coupling 2.5 2 Rth (c) Value 2 C/W When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol Parameter Tests conditions IR * Reverse leakage current Tj = 25C Min. VR = VRRM Tj = 125C VF ** Forward voltage drop Pulse test : Typ. Max. Unit 4.5 A 6 mA V 2 Tj = 25C IF = 8 A 0.71 Tj = 25C IF = 10 A 0.77 Tj = 25C IF = 16 A 0.81 Tj = 25C IF = 20 A 0.88 Tj = 125C IF = 8 A 0.56 0.58 Tj = 125C IF = 10 A 0.59 0.64 Tj = 125C IF = 16 A 0.65 0.68 Tj = 125C IF = 20 A 0.67 0.73 * tp = 5 ms, < 2% ** tp = 380 s, < 2% To evaluate the maximum conduction losses use the following equation : P = 0.55 x IF(AV) + 0.009 x IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current (per diode). Fig. 2: Average forward current versus ambient temperature (=0.5, per diode). PF(av)(W) 8 IF(av)(A) = 0.05 = 0.1 = 0.2 12 = 0.5 Rth(j-a)=Rth(j-c) TO220AB 10 6 = 1 Rth(j-a)=15C/W 8 ISOWATT220AB Rth(j-a)=40C/W 6 4 2 =tp/T IF(av) (A) 0 4 T 2 0 2/7 2 4 6 Tamb(C) tp 0 8 10 12 0 25 50 75 100 125 150 175 STPS20H100CT/CF/CG/CG-1 Fig. 3: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (TO-220AB, D2PAK, I2PAK) Fig. 4: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (ISOWATT220AB). IM(A) 200 180 160 140 120 100 80 60 40 IM 20 0 1E-3 120 100 Tc=50C 80 Tc=75C 60 Tj=75C 40 IM 20 t =0.5 1E-2 1E-1 1E+0 0 1E-3 1.0 0.8 0.8 = 0.5 0.6 0.4 = 0.2 = 0.1 T 0.2 =tp/T tp(s) 1E-2 1E-1 1E+0 1E-1 1E+0 = 0.5 = 0.2 = 0.1 Single pulse tp(s) tp Fig. 7: Reverse leakage current versus reverse voltage applied (typical values, per diode). 1E+4 1E-2 Zth(j-c)/Rth(j-c) Single pulse 0.0 1E-3 t(s) Fig. 6: Relative variation of thermal impedance junction to case versus pulse duration (per diode) (ISOWATT220AB). Zth(j-c)/Rth(j-c) 0.2 Tj=125C t =0.5 t(s) 1.0 0.4 Tj=50C Tc=125C Fig. 5: Relative variation of thermal impedance junction to case versus pulse duration (per diode) (TO-220AB, D2PAK, I2PAK). 0.6 IM(A) 140 0.0 1E-2 1E-1 1E+0 1E+1 Fig. 8: Junction capacitance versus reverse voltage applied (typical values, per diode). C(pF) IR(A) 1000 F=1MHz Tj=25C Tj=150C 1E+3 Tj=125C 1E+2 500 Tj=100C 1E+1 1E+0 1E-2 200 Tj=25C 1E-1 VR(V) VR(V) 0 10 20 30 40 50 60 70 80 90 100 100 1 2 5 10 20 50 100 3/7 STPS20H100CT/CF/CG/CG-1 Fig. 9: Forward voltage drop versus forward current (maximum values, per diode). 100.0 Fig. 10: Thermal resistance junction to ambient versuscoppersurfaceundertab (Epoxy printed circuit board FR4, copperthickness: 35m) (D2PAK). Rth(j-a) (C/W) IFM(A) 80 70 60 Tj=150C Typical values 10.0 50 Tj=125C Tj=125C Typical values 40 Tj=25C 30 1.0 20 10 VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 S(Cu) (cm ) 0 5 10 15 20 25 30 35 PACKAGE MECHANICAL DATA TO-220AB REF. DIMENSIONS Millimeters Inches Min. A H2 Dia C L5 L7 L6 L2 F2 F1 D L9 L4 F M G1 E G 4/7 A C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. Max. 4.40 4.60 1.23 1.32 2.40 2.72 0.49 0.70 0.61 0.88 1.14 1.70 1.14 1.70 4.95 5.15 2.40 2.70 10 10.40 16.4 typ. 13 14 2.65 2.95 15.25 15.75 6.20 6.60 3.50 3.93 2.6 typ. 3.75 3.85 Min. Max. 0.173 0.181 0.048 0.051 0.094 0.107 0.019 0.027 0.024 0.034 0.044 0.066 0.044 0.066 0.194 0.202 0.094 0.106 0.393 0.409 0.645 typ. 0.511 0.551 0.104 0.116 0.600 0.620 0.244 0.259 0.137 0.154 0.102 typ. 0.147 0.151 40 STPS20H100CT/CF/CG/CG-1 PACKAGE MECHANICAL DATA ISOWATT220AB DIMENSIONS REF. Millimeters Inches Min. Max. Min. Max. A 4.40 4.60 0.173 0.181 B 2.50 2.70 0.098 0.106 D 2.50 2.75 0.098 0.108 E 0.40 0.70 0.016 0.028 F 0.75 1.00 0.030 0.039 F1 1.15 1.70 0.045 0.067 F2 1.15 1.70 0.045 0.067 G 4.95 5.20 0.195 0.205 G1 2.40 2.70 0.094 0.106 H 10.00 10.40 0.394 0.409 L2 16.00 typ. 0.630 typ. L3 28.60 30.60 1.125 1.205 L4 9.80 10.60 0.386 0.417 L6 15.90 16.40 0.626 0.646 L7 9.00 9.30 0.354 0.366 Diam 3.00 3.20 0.118 0.126 5/7 STPS20H100CT/CF/CG/CG-1 PACKAGE MECHANICAL DATA D2PAK DIMENSIONS A E Millimeters Min. Max. Inches Min. Max. A A1 A2 B B2 C C2 D E G L L2 L3 M R V2 4.40 4.60 2.49 2.69 0.03 0.23 0.70 0.93 1.14 1.70 0.45 0.60 1.23 1.36 8.95 9.35 10.00 10.40 4.88 5.28 15.00 15.85 1.27 1.40 1.40 1.75 2.40 3.20 0.40 typ. 0 8 0.173 0.181 0.098 0.106 0.001 0.009 0.027 0.037 0.045 0.067 0.017 0.024 0.048 0.054 0.352 0.368 0.393 0.409 0.192 0.208 0.590 0.624 0.050 0.055 0.055 0.069 0.094 0.126 0.016 typ. 0 8 C2 L2 D L L3 A1 B2 B R C G A2 M * V2 * FLAT ZONE NO LESSTHAN 2mm FOOT PRINT DIMENSIONS (in millimeters) 16.90 10.30 5.08 1.30 3.70 8.90 6/7 REF. STPS20H100CT/CF/CG/CG-1 PACKAGE MECHANICAL DATA I2PAK DIMENSIONS REF. A A E c2 L2 D L1 Max. Min. Max. 4.40 4.60 0.173 0.181 2.49 2.69 0.098 0.106 0.70 0.93 0.028 0.037 b1 1.14 1.17 0.044 0.046 b2 1.14 1.17 0.044 0.046 c 0.45 0.60 0.018 0.024 c2 1.23 1.36 0.048 0.054 D 8.95 9.35 0.352 0.368 e 2.40 2.70 0.094 0.106 b2 E 10.0 10.4 0.394 0.409 L 13.1 13.6 0.516 0.535 L1 3.48 3.78 0.137 0.149 L2 1.27 1.40 0.050 0.055 b1 e Min. b L c Inches A1 A1 b Millimeters Ordering type Marking Package Weight Base qty Delivery mode STPS20H100CT STPS20H100CT TO-220AB 2.20g 50 Tube STPS20H100CF STPS20H100CF ISOWATT220AB 2.08g 50 Tube STPS20H100CG-1 STPS20H100CG I2PAK 1.49g 50 Tube STPS20H100CG STPS20H100CG D2PAK 1.48g 50 Tube 1.48g 1000 Tape & reel STPS20H100CG-TR STPS20H100CG 2 D PAK Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 7/7