STPS20H100CT/CF/CG/CG-1
July 1999 - Ed: 3B
HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
IF(AV) 2 x 10 A
VRRM 100 V
Tj 175°C
VF(max) 0.64 V
MAINPRODUCT CHARACTERISTICS
NEGLIGIBLESWITCHING LOSSES
HIGHJUNCTIONTEMPERATURECAPABILITY
GOODTRADE OFFBETWEEN LEAKAGECUR-
RENTANDFORWARD VOLTAGEDROP
LOWLEAKAGECURRENT
AVALANCHERATED
INSULATEDPACKAGE:ISOWATT220AB
InsulatingVoltage = 2500V(RMS)
Capacitance= 45pF
FEATURES AND BENEFITS
Dual center tap schottky rectifier designed for
high frequency miniature Switched Mode
Power Supplies such as adaptators and on
board DC/DC converters.
DESCRIPTION
TO-220AB
STPS20H100CT
KA2
A1
Symbol Parameter Value Unit
VRRM Repetitivepeakreversevoltage 100 V
IF(RMS) RMSforwardcurrent 30 A
IF(AV) Averageforward
current δ= 0.5 TO-220AB
D2PAK/ I2PAK Tc =160°C per diode
per device 10
20 A
ISOWATT220AB Tc =145°C
IFSM Surgenon repetitiveforwardcurrent tp = 10ms sinusoidal 250 A
IRRM Repetitivepeak reverse current tp = 2 µs squareF = 1kHz 1 A
IRSM Non repetitivepeak reverse current tp = 100µs square 3 A
Tstg Storagetemperaturerange - 65 to + 175 °C
Tj Maximumoperatingjunctiontemperature* 175 °C
dV/dt Criticalrate of riseof reversevoltage 10000 V/µs
ABSOLUTE RATINGS (limitingvalues, per diode)
I2PAK
STPS20H100CG-1
D2PAK
STPS20H100CG
K
A1
A2
K
A2
A1
A1
A2 K
ISOWATT220AB
STPS20H100CF
KA2
A1
*:
dPtot
dTj
<1
Rth
(
j
−
a
)thermal runawayconditionfor a diode on its own heatsink
1/7
Symbol Parameter Value Unit
Rth (j-c) Junctionto case TO-220AB/ D2PAK / I2PAK Per diode 1.6 °C/W
ISOWATT220AB Per diode 4
TO-220AB/ D2PAK / I2PAK Total 0.9
ISOWATT220AB Total 3.2 °C/W
Rth(c) TO-220AB/ D2PAK / I2PAK Coupling 0.15
ISOWATT220AB Coupling 2.5
THERMAL RESISTANCES
Symbol Parameter Tests conditions Min. Typ. Max. Unit
IR* Reverse leakagecurrent Tj = 25°CV
R
=V
RRM 4.5 µA
Tj = 125°C26mA
V
F
** Forward voltagedrop Tj = 25°CI
F
= 8 A 0.71 V
Tj=25°CI
F
= 10A 0.77
Tj=25°CI
F
= 16A 0.81
Tj=25°CI
F
= 20A 0.88
Tj = 125°CI
F
= 8 A 0.56 0.58
Tj = 125°CI
F
= 10A 0.59 0.64
Tj = 125°CI
F
= 16A 0.65 0.68
Tj = 125°CI
F
= 20A 0.67 0.73
Pulse test : * tp = 5 ms, δ<2%
** tp = 380 µs, δ<2%
To evaluate the maximum conductionlosses use the followingequation :
P = 0.55 x IF(AV) + 0.009 x IF2(RMS)
STATICELECTRICAL CHARACTERISTICS (per diode)
024681012
0
2
4
6
8
IF(av) (A)
PF(av)(W)
δ= 0.5
δ=1
δ= 0.05 δ= 0.2
δ= 0.1
T
δ=tp/T tp
Fig. 1: Averageforward power dissipationversus
averageforwardcurrent(per diode).
0 25 50 75 100 125 150 175
0
2
4
6
8
10
12 IF(av)(A)
Tamb(°C)
ISOWATT220AB
TO220AB
Rth(j-a)=Rth(j-c)
Rth(j-a)=15°C/W
Rth(j-a)=40°C/W
Fig. 2: Average forward current versus ambient
temperature(δ=0.5,per diode).
Whenthe diodes1 and 2are used simultaneously:
∆Tj(diode 1) = P(diode1)x Rth(j-c)(Per diode)+ P(diode2) x Rth(c)
STPS20H100CT/CF/CG/CG-1
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1E-3 1E-2 1E-1 1E+0
0
20
40
60
80
100
120
140
160
180
200
t(s)
IM(A)
Tc=50°C
Tc=75°C
Tc=125°C
IM
t
δ=0.5
Fig. 3: Non repetitive surgepeak forwardcurrent
versus overload duration (maximum values, per
diode)(TO-220AB, D2PAK,I2PAK)
1E-3 1E-2 1E-1 1E+0
0.0
0.2
0.4
0.6
0.8
1.0
tp(s)
Zth(j-c)/Rth(j-c)
δ= 0.1
δ= 0.2
δ= 0.5
Single pulse
T
δ=tp/T tp
Fig. 5: Relative variation of thermal impedance
junction to case versus pulse duration (per diode)
(TO-220AB,D2PAK, I2PAK).
0 102030405060708090100
1E-2
1E-1
1E+0
1E+1
1E+2
1E+3
1E+4 IR(µA)
VR(V)
Tj=125°C
Tj=100°C
Tj=25°C
Tj=150°C
Fig. 7: Reverse leakage current versus reverse
voltageapplied (typicalvalues, per diode).
1 2 5 10 20 50 100
100
200
500
1000
VR(V)
C(pF)
F=1MHz
Tj=25°C
Fig. 8: Junction capacitance versus reverse
voltageapplied(typical values,per diode).
1E-3 1E-2 1E-1 1E+0
0
20
40
60
80
100
120
140 IM(A)
IM
t
δ=0.5 t(s)
Tj=125°C
Tj=75°C
Tj=50°C
Fig. 4: Non repetitive surge peak forward current
versus overload duration (maximum values, per
diode)(ISOWATT220AB).
1E-2 1E-1 1E+0 1E+1
0.0
0.2
0.4
0.6
0.8
1.0 Zth(j-c)/Rth(j-c)
tp(s)
δ= 0.1
δ= 0.2
δ= 0.5
Single pulse
Fig. 6: Relative variation of thermal impedance
junction to case versus pulse duration (per diode)
(ISOWATT220AB).
STPS20H100CT/CF/CG/CG-1
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PACKAGE MECHANICAL DATA
TO-220AB
A
C
D
L7
Dia
L5
L6
L9
L4
F
H2
G
G1
L2 F2
F1
E
M
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
C 1.23 1.32 0.048 0.051
D 2.40 2.72 0.094 0.107
E 0.49 0.70 0.019 0.027
F 0.61 0.88 0.024 0.034
F1 1.14 1.70 0.044 0.066
F2 1.14 1.70 0.044 0.066
G 4.95 5.15 0.194 0.202
G1 2.40 2.70 0.094 0.106
H2 10 10.40 0.393 0.409
L2 16.4typ. 0.645typ.
L4 13 14 0.511 0.551
L5 2.65 2.95 0.104 0.116
L6 15.25 15.75 0.600 0.620
L7 6.20 6.60 0.244 0.259
L9 3.50 3.93 0.137 0.154
M 2.6typ. 0.102typ.
Diam. 3.75 3.85 0.147 0.151
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.1
1.0
10.0
100.0 IFM(A)
Tj=125°C
Typicalvalues
Tj=125°C
Tj=25°C
Tj=150°C
Typicalvalues
VFM(V)
Fig. 9: Forward voltage drop versus forward
current(maximumvalues,per diode).
0 5 10 15 20 25 30 35 40
0
10
20
30
40
50
60
70
80
S(Cu) (cm )
Rth(j-a) (°C/W)
Fig. 10: Thermal resistance junction to ambient
versuscoppersurfaceundertab(Epoxyprintedcircuit
boardFR4,copperthickness:35µm)(D2PAK).
STPS20H100CT/CF/CG/CG-1
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PACKAGE MECHANICAL DATA
ISOWATT220AB
REF.
DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
B 2.50 2.70 0.098 0.106
D 2.50 2.75 0.098 0.108
E 0.40 0.70 0.016 0.028
F 0.75 1.00 0.030 0.039
F1 1.15 1.70 0.045 0.067
F2 1.15 1.70 0.045 0.067
G 4.95 5.20 0.195 0.205
G1 2.40 2.70 0.094 0.106
H 10.00 10.40 0.394 0.409
L2 16.00typ. 0.630typ.
L3 28.60 30.60 1.125 1.205
L4 9.80 10.60 0.386 0.417
L6 15.90 16.40 0.626 0.646
L7 9.00 9.30 0.354 0.366
Diam 3.00 3.20 0.118 0.126
STPS20H100CT/CF/CG/CG-1
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PACKAGE MECHANICAL DATA
D2PAK
A
C2
D
R
A2
MV2
C
A1
G
L
L3
L2
B
B2
E
*
* FLAT ZONE NO LESSTHAN 2mm
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.70 0.93 0.027 0.037
B2 1.14 1.70 0.045 0.067
C 0.45 0.60 0.017 0.024
C2 1.23 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
E 10.00 10.40 0.393 0.409
G 4.88 5.28 0.192 0.208
L 15.00 15.85 0.590 0.624
L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069
M 2.40 3.20 0.094 0.126
R 0.40 typ. 0.016 typ.
V2 0°8°0°8°
8.90 3.70
1.30
5.08
16.90
10.30
FOOT PRINT DIMENSIONS (inmillimeters)
STPS20H100CT/CF/CG/CG-1
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implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to
change withoutnotice. This publication supersedes and replaces all information previously supplied.
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PACKAGE MECHANICAL DATA
I2PAK
e
D
L
L1
L2
b1
b
b2
E
A
c2
A1
c
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
b 0.70 0.93 0.028 0.037
b1 1.14 1.17 0.044 0.046
b2 1.14 1.17 0.044 0.046
c 0.45 0.60 0.018 0.024
c2 1.23 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
e 2.40 2.70 0.094 0.106
E 10.0 10.4 0.394 0.409
L 13.1 13.6 0.516 0.535
L1 3.48 3.78 0.137 0.149
L2 1.27 1.40 0.050 0.055
Orderingtype Marking Package Weight Base qty Deliverymode
STPS20H100CT STPS20H100CT TO-220AB 2.20g 50 Tube
STPS20H100CF STPS20H100CF ISOWATT220AB 2.08g 50 Tube
STPS20H100CG-1 STPS20H100CG I2PAK 1.49g 50 Tube
STPS20H100CG STPS20H100CG D2PAK 1.48g 50 Tube
STPS20H100CG-TR STPS20H100CG D2PAK 1.48g 1000 Tape & reel
EpoxymeetsUL94,V0
STPS20H100CT/CF/CG/CG-1
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