1N5817 - 1N5819 — Schottky Barrier Rectifier
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
1N5817 - 1N5819 Rev. C2 1
November 2010
1N5817 - 1N5819
Schottky Barrier Rectifier
Features
• 1.0 ampere operation at TA = 90°C with no thermal runaway.
• For use in low voltage, high frequency inverters free wheeling, and polarity protection applica ti ons.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Thermal Characteristics
* Mounted on Cu-pad Size 5mm x 5mm on PCB
Electrical Characteristics (per diode)
* Pulse Test: Pulse Width=300μs, Duty Cycle=2%
Symbol Parameter Value Units
1N5817 1N5818 1N5819
VRRM Maximum Repetitive Reverse Voltage 20 30 40 V
IF(AV) Average Recti fi e d Forward Current
.375” lead length @ TA = 90°C1.0 A
IFSM Non-repetitive Peak Surge Current
8.3 ms Single Half-Sine Wave 25 A
TJ, TSTG Operating Junction and Storage Temperature -65 to +125 °C
Symbol Parameter Value Units
PDPower Dissipation 1.25 W
RθJA Maximum Thermal Resistance, Junction to Ambient 100 °C/W
RθJC Maximum Thermal Resistance, Junction to Case 45 °C/W
Symbol Parameter Value Units
1N5817 1N5818 1N5819
VFForward Voltage @ 1.0 A
@ 3.0 A 450
750 550
875 600
900 mV
mV
IRReverse Current @ rated VR TC = 25 °C
TC = 100 °C0.5
10 mA
mA
CTTotal Capacitance
VR = 4.0 V, f = 1.0 MHz 110 pF
DO-41 plastic case
COLOR BAND DENOTES CATHODE
1N5817 - 1N5819 — Schottky Barrier Rectifier
© 2010 Fairchild Semiconductor Corporation www.fairchildsemi.com
1N5817 - 1N5819 Rev. C2 2
0 20 40 60 80 100 120 140
0
0.25
0.5
0.75
1
Lead Temperature [º C ]
Average Rectified Forward Current, IF [A]
SINGLE PHASE
HALF WAVE
60HZ
RESISTIVE OR
INDUCTIVE LOAD
.375" 9.5 mm LEAD
LENGTHS
0.1 0.5 1 5 10 40 60 100
10
20
40
60
80
100
200
400
Reverse Voltage, VR [V]
Total Capacitance, CT [pF]
T = 25 C
º
J
12 51020 50100
0
5
10
15
20
25
30
Number of Cycles at 60Hz
Peak Forward Surge Current, IFSM [A]
8.3ms Single Half Sine-Wave
JEDEC Method
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
0.1
1
10
20
Forward Voltage, VF [V]
Forward Current, IF [A]
1N5817
1N5818
1N5819
T = 25 C
Pulse Widt h = 300μ
μμ
μS
1% Duty Cycle
º
J
Figure 1. Forward Current Derating Curve Figure 2. Forward Voltage Characteristics
Figure 3. Non-Repetitive Surge Current Figure 4. Total Capacitance
Typical Performance Characteristics
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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