
IRF8301MTRPbF
www.irf.com © 2013 International Rectifier September 6, 2013
2
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units
BV
DSS
Drain-to-Source Breakdown Voltage 30 ––– ––– V
∆ΒV
DSS
/∆T
J
Breakdown Voltage Temp. Coefficient ––– 21 ––– mV/°C
R
DS(on)
Static Drain-to-Source On-Resistance ––– 1.3 1.5 mΩ
––– 1.9 2.4
V
GS(th)
Gate Threshold Voltage 1.35 1.7 2.35 V
∆V
GS(th)
/∆T
J
Gate Threshold Voltage Coefficient ––– -6.0 ––– mV/°C
I
DSS
Drain-to-Source Leakage Current ––– ––– 1.0 µA
––– ––– 150
I
GSS
Gate-to-Source Forward Leakage ––– ––– 100 nA
Gate-to-Source Reverse Leakage ––– ––– -100
gfs Forward Transconductance 150 ––– ––– S
Q
g
Total Gate Charge ––– 51 77
Q
s1
Pre-Vth Gate-to-Source Charge ––– 12 –––
Q
gs2
Post-Vth Gate-to-Source Charge ––– 5.4 ––– nC
Q
gd
Gate-to-Drain Charge ––– 16 –––
Q
odr
Gate Charge Overdrive ––– 18 ––– See Fig. 15
Q
sw
Switch Charge (Q
gs2
+ Q
gd
) ––– 21 –––
Q
oss
Output Charge ––– 28 ––– nC
R
G
Gate Resistance ––– 1.0 3.0
Ω
t
d(on)
Turn-On Delay Time ––– 20 –––
t
r
Rise Time ––– 30 ––– ns
t
d
off
Turn-Off Delay Time ––– 25 –––
t
f
Fall Time ––– 17 –––
C
iss
Input Capacitance ––– 6140 –––
C
oss
Output Capacitance ––– 1270 ––– pF
C
rss
Reverse Transfer Capacitance ––– 590 –––
Diode Characteristics
Parameter Min. Typ. Max. Units
I
S
Continuous Source Current ––– ––– 110
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 250
(Body Diode)
g
V
SD
Diode Forward Voltage ––– 0.77 1.0 V
t
rr
Reverse Recovery Time ––– 27 41 ns
Q
rr
Reverse Recovery Charge ––– 45 68 nC
ƒ = 1.0MHz
V
DS
= 16V, V
GS
= 0V
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 32A
i
V
GS
= 4.5V, I
D
= 25A
i
MOSFET symbol
R
G
= 1.8Ω
V
DS
= 15V, I
D
= 25A
Conditions
V
DS
= V
GS
, I
D
= 150µA
T
J
= 25°C, I
F
= 25A
V
GS
= 4.5V
I
D
= 25A
V
GS
= 0V
V
DS
= 15V
I
D
= 25A
V
DD
= 15V, V
GS
= 4.5V
i
V
GS
= 20V
V
GS
= -20V
di/dt = 500A/µs
i
T
J
= 25°C, I
S
= 25A, V
GS
= 0V
i
showing the
integral reverse
p-n junction diode.
V
DS
= 24V, V
GS
= 0V
V
DS
= 15V
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
See Fig. 17
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Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.82mH, RG = 25Ω, IAS = 25A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Notes: