MMBTA28
Document number: DS30367 Rev. 10 - 2
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80V NPN DARLINGTON TRANSISTOR IN SOT23
Features
BVCES > 80V
Epitaxial Planar Die Construction
Ideal for Low Power Amplification and Switching
High Current Gain
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23
Case Material: molded plastic, “Green” molding compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight 0.008 grams (approximate)
Ordering Information (Note 4)
Part Number Compliance Marking Reel size (inches) Tape width (mm) Quantity per reel
MMBTA28-7-F AEC-Q101 K6R 7 8 3,000
MMBTA28-13-F AEC-Q101 K6R 13 8 10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year 2010 2011 2012 2013 2014 2015 2016 2017
Code X Y Z A B C D E
Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec
Code 1 2 3 4 5 6 7 8 9 O N D
Top View
Pin-Out
C
E
B
Top View Device Symbol
SOT23
C
E
B
K6R
YM
K6R = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: B = 2014)
M or M = Month (ex: 9 = September)
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Document number: DS30367 Rev. 10 - 2
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Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Collector-Base Voltage VCBO 80 V
Collector-Emitter Voltage VCES 80 V
Emitter-Base Voltage VEBO 12 V
Continuous Collector Current IC 500 mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Value Unit
Power Dissipation (Note 5) PD
310 mW
(Note 6) 350
Thermal Resistance, Junction to Ambient (Note 5) RθJA 403 C/W
(Note 6) 357
Thermal Resistance, Junction to Leads (Note 7) RθJL 350 C/W
Operating and Storage Temperature Range TJ,TSTG -55 to +150 C
Notes: 5. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Same as note (5), except the device is mounted on 15 mm x 15mm 1oz copper.
7. Thermal resistance from junction to solder-point (at the end of the leads).
0 25 50 75 100 125 150
0.0
0.1
0.2
0.3
0.4
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 1 10 100 1k
0
50
100
150
200
250
300
350
400
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s)
10m 100m 1 10 100 1k
0.1
1
10
Single Pulse. Tamb=25°C
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
MMBTA28
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage BVCBO 80 — — V
IC = 100µA, IE = 0
Collector-Emitter Breakdown Voltage (Note 8) BVCES 80 — — V
IC = 100µA, VBE = 0
Emitter-Base Breakdown Voltage BVEBO 12 — — V
IE = 100µA, IC = 0
Collector cut-off current ICBO — — 100 nA
VCB = 60V, IE = 0
ICES — — 500 nA
VCE = 60V, VBE = 0
Emitter-base Cut-off Current IEBO — — 100 nA
VEB = 10V, IC = 0
ON CHARACTERISTICS (Note 8)
Static Forward Current Transfer Ratio hFE 10,000
10,000 — — — IC = 10mA, VCE = 5V
IC = 100mA, VCE = 5V
Collector-Emitter Saturation Voltage VCE(sat) — —
1.2
1.5 V IC = 10mA, IB = 10µA
IC = 100mA, IB = 100µA
Base-Emitter Turn-On Voltage VBE
(
on
)
— — 2.0 V
IC = 100mA, VCE = 5V
SMALL SIGNAL CHARACTERISTICS (Note 8)
Current Gain-Bandwidth Product fT 125 — — MHz
IC = 10mA, VCE = 5V,
f = 100MHz
Output Capacitance Cobo — 8.0 — pF
VCB = 10V, f = 1MHz, IE = 0
Input Capacitance Cibo — 15.0 — pF
VEB = 0.5V, f = 1MHz, IC = 0
Note: 8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
MMBTA28
Document number: DS30367 Rev. 10 - 2
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Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
0.1
0
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
110
100 1,000
V,
C
O
LLE
C
T
O
R
-EMI
T
T
E
R
SA
T
U
R
A
T
I
O
N
VOLTAGE (V)
CE(SAT)
I , COLLECTOR CURRENT (mA)
Fig. 2 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
C
T = 150°C
A
T = -50°C
A
I
I
C
B
= 1000
T = 25°C
A
0.4
0.3
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
0.1 1 10 100
V , BASE-EMI
T
T
E
R
V
O
L
T
A
G
E (V)
BE(ON)
I , COLLECTOR CURRENT (mA)
Fig. 3 Typical Base-Emitter Voltage
vs. Collector Current
C
T = 25°C
A
V = 5V
CE
T = -50°C
A
T = 150°C
A
110100
1,000
100
1,000
10,000
1,000,000
100,000
I , COLLECTOR CURRENT (mA)
Fig. 4 Typical DC Current Gain
vs. Collector Current
C
h, D
C
C
U
R
R
E
N
T
G
AI
N
FE
V= 5V
CE
T = 150°C
A
T = 25°C
A
T = -50°C
A
110
100
1
10
100
1,000
COLLECTOR CURRENT I (mA)
Fig. 5 Typical Gain Bandwidth Product
vs. Collector Current
C
f,
G
AIN BANDWID
T
H
P
R
O
D
U
C
T
(M
H
z)
T
V = 5V
CE
MMBTA28
Document number: DS30367 Rev. 10 - 2
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
SOT23
Dim Min Max Typ
A 0.37 0.51 0.40
B 1.20 1.40 1.30
C 2.30 2.50 2.40
D 0.89 1.03 0.915
F 0.45 0.60 0.535
G 1.78 2.05 1.83
H 2.80 3.00 2.90
J 0.013 0.10 0.05
K 0.890 1.00 0.975
K1 0.903 1.10 1.025
L 0.45 0.61 0.55
L1 0.25 0.55 0.40
M 0.085 0.150 0.110
a
8°
All Dimensions in mm
Dimensions Value (in mm)
Z 2.9
X 0.8
Y 0.9
C 2.0
E 1.35
XE
Y
C
Z
J
K1K
L1
H
L
M
All 7°
A
CB
D
a
MMBTA28
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
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