Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 1
Rev. B
07/22/09
Copyright © 2005 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no
liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on
any published information and before placing orders for products.
IS64WV3216BLL
IS61WV3216BLL
FUNCTIONAL BLOCK DIAGRAM
32K x 16 HIGH-SPEED CMOS STATIC RAM
JULY 2009
FEATURES
• High-speedaccesstime:
12ns:3.3V+ 10%
15ns:2.5V-3.6V
• CMOSlowpoweroperation:
50 mW (typical) operating
25 µW (typical) standby
• TTLcompatibleinterfacelevels
• Fullystaticoperation:noclockorrefresh
required
• Threestateoutputs
• Datacontrolforupperandlowerbytes
• AutomotiveTemperatureAvailable
• Lead-freeavailable
DESCRIPTION
TheISSIIS61/64WV3216BLLisahigh-speed,524,288-bit
static RAM organized as 32,768 words by 16 bits. It
is fabricated using ISSI's high-performance CMOS
technology.Thishighlyreliableprocesscoupledwithin-
novative circuit design techniques, yields access times as
fast as 12ns (3.3V+ 10%)and15ns(2.5V-3.6V)withlow
power consumption.
When CE is HIGH (deselected), the device assumes
a standby mode at which the power dissipation can be
reduceddownwithCMOSinputlevels.
Easy memory expansion is provided by using Chip Enable
andOutputEnableinputs,CE and OE.TheactiveLOW
Write Enable (WE) controls both writing and reading of the
memory.AdatabyteallowsUpperByte(UB)andLower
Byte(LB) access.
The IS61/64WV3216BLL is packaged in the JEDEC
standard44-pinTSOP-II,and48-pinminiBGA(6mmx
8mm).
A0-A14
CE
OE
WE
32Kx16
MEMORYARRAY
DECODER
COLUMNI/O
CONTROL
CIRCUIT
GND
VDD
I/O
DATA
CIRCUIT
I/O0-I/O7
LowerByte
I/O8-I/O15
UpperByte
UB
LB
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Rev. B
07/22/09
IS64WV3216BLL
IS61WV3216BLL
PIN CONFIGURATIONS
44-Pin TSOP-II
48-Pin mini BGA (6mm x 8mm)
PIN DESCRIPTIONS
A0-A14 AddressInputs
I/O0-I/O15 DataInputs/Outputs
CE Chip Enable Input
OE OutputEnableInput
WE Write Enable Input
LB Lower-byteControl(I/O0-I/O7)
UB Upper-byteControl(I/O8-I/O15)
NC NoConnection
Vd d Power
GND Ground
1 2 3 4 5 6
A
B
C
D
E
F
G
H
LB OE A0 A1 A2 NC
I/O
8
UB A3 A4 CE I/O
0
I/O
9
I/O
10
A5 A6 I/O
1
I/O
2
GND I/O
11
NC A7 I/O
3
V
DD
V
DD
I/O
12
NC NC I/O
4
GND
I/O
14
I/O
13
A14 NC I/O
5
I/O
6
I/O
15
NC A12 A13 WE I/O
7
NC A8 A9 A10 A11 NC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
NC
A14
A13
A12
A11
CE
I/O0
I/O1
I/O2
I/O3
V
DD
GND
I/O4
I/O5
I/O6
I/O7
WE
A10
A9
A8
A7
NC
A0
A1
A2
OE
UB
LB
I/O15
I/O14
I/O13
I/O12
GND
V
DD
I/O11
I/O10
I/O9
I/O8
NC
A3
A4
A5
A6
NC
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-47743
Rev. B
07/22/09
IS64WV3216BLL
IS61WV3216BLL
OPERATING RANGE (Vd d )
Range Ambient Temperature Vd d (15 ns) Vd d (12 ns)
Commercial 0°Cto+70°C 2.5V-3.6V 3.3V+ 10%
Industrial –40°Cto+85°C 2.5V-3.6V 3.3V+ 10%
Automotive –40°Cto+125°C 2.5V-3.6V 3.3V+ 10%
ABSOLUTE MAXIMUM RATINGS(1)
Symbol Parameter Value Unit
Vt e r m TerminalVoltagewithRespecttoGND –0.5toVd d +0.5 V
ts t g StorageTemperature –65to+150 °C
Pt PowerDissipation 1.5 W
Vd d Vd d RelatedtoGND -0.2to+3.9 V
Note:
1.StressgreaterthanthoselistedunderABSOLUTEMAXIMUMRATINGSmaycausepermanentdamagetothe
device.Thisisastressratingonlyandfunctionaloperationofthedeviceattheseoranyotherconditionsabove
those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect reliability.
TRUTH TABLE
I/O PIN
Mode WE CE OE LB UB I/O0-I/O7 I/O8-I/O15 Vd d Current
NotSelected X H X X X High-Z High-Z Is b 1, Is b 2
OutputDisabled H L H X X High-Z High-Z Ic c
X L X H H High-Z High-Z
Read H L L L H do u t High-Z Ic c
H L L H L High-Z do u t
H L L L L do u t do u t
Write L L X L H dI n High-Z Ic c
L L X H L High-Z dI n
L L X L L dI n dI n
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Rev. B
07/22/09
IS64WV3216BLL
IS61WV3216BLL
DC ELECTRICAL CHARACTERISTICS (OverOperatingRange)
Vd d = 2.5V-3.6V
Symbol Parameter Test Conditions Min. Max. Unit
Vo H OutputHIGHVoltage Vd d = Min.,Io H = –1.0mA 2.3 — V
Vo L OutputLOWVoltage Vd d = Min.,Io L = 1.0mA — 0.4 V
VI H InputHIGHVoltage 2.0 Vd d + 0.3 V
VI L InputLOWVoltage(1) –0.3 0.8 V
IL I InputLeakage GND≤ VI n ≤ Vd d –2 2 µA
IL o OutputLeakage GND≤ Vo u t ≤ Vd d , OutputsDisabled –2 2 µA
Note:
1. VI L (min.) = –0.3VDC;VI L (min.)=–2.0VAC(pulsewidth2.0ns).Not100%tested.
VI H (max.) = Vd d + 0.3V dc;VI H (max.) = Vd d + 2.0V Ac(pulsewidth2.0ns).Not100%tested.
DC ELECTRICAL CHARACTERISTICS (OverOperatingRange)
Vd d = 3.3V + 10%
Symbol Parameter Test Conditions Min. Max. Unit
Vo H OutputHIGHVoltage Vd d = Min.,Io H = –4.0mA 2.4 — V
Vo L OutputLOWVoltage Vd d = Min.,Io L = 8.0mA — 0.4 V
VI H InputHIGHVoltage 2 Vd d + 0.3 V
VI L InputLOWVoltage(1) –0.3 0.8 V
IL I InputLeakage GND≤ VI n ≤ Vd d –2 2 µA
IL o OutputLeakage GND≤ Vo u t ≤ Vd d , OutputsDisabled –2 2 µA
Note:
1. VI L (min.) = –0.3VDC;VI L (min.)=–2.0VAC(pulsewidth2.0ns).Not100%tested.
VI H (max.) = Vd d + 0.3V dc;VI H (max.) = Vd d + 2.0V Ac(pulsewidth2.0ns).Not100%tested.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 5
Rev. B
07/22/09
IS64WV3216BLL
IS61WV3216BLL
CAPACITANCE(1)
Symbol Parameter Conditions Max. Unit
cI n Input Capacitance VI n = 0V 6 pF
co u t Input/OutputCapacitance Vo u t = 0V 8 pF
Note:
1.Testedinitiallyandafteranydesignorprocesschangesthatmayaffecttheseparameters.
POWER SUPPLY CHARACTERISTICS(1) (OverOperatingRange)
-12 ns -15 ns
Symbol Parameter Test Conditions Options Min. Max. Min. Max. Unit
Ic c Vd d DynamicOperating Vd d = Max., 
c o m .
— 35 — 30 mA
Supply Current Io u t = 0 mA, f = fm A X
I n d .
— 45 — 40
A u t o — 60 — 50
typ.(2) — 20 — 20
Ic c 1 OperatingSupply Vd d =Max.,
c o m .
— 5 — 5 mA
Current Iout = 0mA, f = 0
I n d .
— 5 — 5
A u t o — 5 — 5
Is b 2 CMOSStandby Vd d = Max.,
c o m .
— 20 — 20 uA
Current(CMOSInputs) CE ≥ Vd d – 0.2V,
I n d .
— 50 — 50
VI n ≥ Vd d – 0.2V, or
A u t o
— 75 — 75
VI n ≤ 0.2V, f = 0 typ.(2) — 6 — 6
Note:
1. At f = fm A X , address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2.TypicalvaluesaremeasuredatVd d =2.5V,TA=25oC.Not100%tested.
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Rev. B
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IS64WV3216BLL
IS61WV3216BLL
AC TEST CONDITIONS
Parameter Unit Unit
(2.5V-3.6V) (3.3V + 10%)
InputPulseLevel 0VtoVd d V 0VtoVd d V
InputRiseandFallTimes 1.5ns 1.5ns
InputandOutputTiming Vd d /2 Vd d /2 + 0.05
andReferenceLevel(VRef)
OutputLoad SeeFigures1aand1b SeeFigures1aand1b
AC TEST LOADS
Figure 1a. Figure 1b.
30pF
Including
jig and
scope
Zo=50Ω
OUTPUT VRef
50Ω
319 Ω
5 pF
Including
jig and
scope
353 Ω
OUTPUT
2.5V
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 7
Rev. B
07/22/09
IS64WV3216BLL
IS61WV3216BLL
READ CYCLE SWITCHING CHARACTERISTICS(1) (OverOperatingRange)
-12 ns -15 ns
Symbol Parameter Min. Max. Min. Max. Unit
tr c ReadCycleTime 12 — 15 — ns
tA A AddressAccessTime — 12 — 15 ns
to H A OutputHoldTime 3 — 3 — ns
tA c e CEAccessTime — 12 — 15 ns
td o e OEAccessTime — 6 — 7 ns
tH z o e (2) OEtoHigh-ZOutput — 6 0 6 ns
tL z o e (2) OEtoLow-ZOutput 0 — 0 — ns
tH z c e (2 CEtoHigh-ZOutput 0 6 0 6 ns
tL z c e (2) CEtoLow-ZOutput 3 — 3 — ns
tb A LB, UBAccessTime — 6 — 7 ns
tH z b LB, UBtoHigh-ZOutput 0 6 0 6 ns
tL z b LB, UBtoLow-ZOutput 0 — 0 — ns
Notes:
1. Testconditionsassumesignaltransitiontimesof1.5nsorless,timingreferencelevelsof1.25V,inputpulselevelsof0Vto
Vd d VandoutputloadingspeciedinFigure1a.
2. TestedwiththeloadinFigure1b.Transitionismeasured±500mVfromsteady-statevoltage.Not100%tested.
3. Not100%tested.
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Rev. B
07/22/09
IS64WV3216BLL
IS61WV3216BLL
READ CYCLE NO. 2(1,3)
AC WAVEFORMS
READ CYCLE NO. 1(1,2) (Address Controlled) (CS = OE=VI L , UB or LB = VI L )
Notes:
1. WEisHIGHforaReadCycle.
2. Thedeviceiscontinuouslyselected.OE, CE, UB, or LB = VI L .
3. AddressisvalidpriortoorcoincidentwithCELOWtransition.
tRC
tOHA
tAA
tDOE
tLZOE
tACE
tLZCE
tHZOE
HIGH-Z DATA VALID
tHZB
ADDRESS
OE
CE
LB, UB
D
OUT
tHZCE
tBA
tLZB
DATA VALID
PREVIOUS DATA VALID
tAA
tOHA tOHA
tRC
DOUT
ADDRESS
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Rev. B
07/22/09
IS64WV3216BLL
IS61WV3216BLL
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (OverOperatingRange)
-12 ns -15 ns
Symbol Parameter Min. Max. Min. Max. Unit
tw c WriteCycleTime 12 — 15 — ns
ts c e CEtoWriteEnd 9 — 10 — ns
tA w AddressSetupTime 9 — 10 — ns
to Write End
tH A AddressHoldfromWriteEnd 0 — 0 — ns
ts A AddressSetupTime 0 — 0 — ns
tP w b LB, UBValidtoEndofWrite 9 — 10 — ns
tP w e 1 WEPulseWidth(OE=HIGH) 9 — 10 — ns
tP w e 2 WEPulseWidth(OE=LOW) 11 — 12 — ns
ts d DataSetuptoWriteEnd 9 — 9 — ns
tH d DataHoldfromWriteEnd 0 — 0 — ns
tH z w e (3) WELOWtoHigh-ZOutput — 6 — 7 ns
tL z w e (3) WEHIGHtoLow-ZOutput 3 — 3 — ns
Notes:
1. TestconditionsforIS61WV3216BLLassumesignaltransitiontimesof1.5nsorless,timingreferencelevelsof1.25V,inputpulse
levelsof0VtoVd d VandoutputloadingspeciedinFigure1a.
2. TestedwiththeloadinFigure1b.Transitionismeasured±500mVfromsteady-statevoltage.Not100%tested.
3. TheinternalwritetimeisdenedbytheoverlapofCELOWandUB or LB, and WELOW.Allsignalsmustbeinvalidstatesto
initiateaWrite,butanyonecangoinactivetoterminatetheWrite.TheDataInputSetupandHoldtimingarereferencedtothe
rising or falling edge of the signal that terminates the write.
10 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
07/22/09
IS64WV3216BLL
IS61WV3216BLL
WRITE CYCLE NO. 1(1,2) (CE Controlled, OE=HIGHorLOW)
DATA UNDEFINED
t
WC
VALID ADDRESS
t
SCE
t
PWE1
t
PWE2
t
AW
t
HA
HIGH-Z
t
PBW
t
HD
t
SA
t
HZWE
ADDRESS
CE
UB, LB
WE
D
OUT
D
IN DATA
IN
VALID
t
LZWE
t
SD
UB_CEWR1.eps
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Rev. B
07/22/09
IS64WV3216BLL
IS61WV3216BLL
WRITE CYCLE NO. 2(1)
(WE Controlled, OE = HIgH during Write Cycle)
WRITE CYCLE NO. 3 (WEControlled:OEisLOWDuringWriteCycle)
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Rev. B
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IS64WV3216BLL
IS61WV3216BLL
WRITE CYCLE NO. 4
(LB, UB Controlled,Back-to-BackWrite)(1,3)
Notes:
1. TheinternalWritetimeisdenedbytheoverlapofCE = Low, UB and/or LB = Low, and WE=LOW.Allsignalsmustbe
invalidstatestoinitiateaWrite,butanycanbedeassertedtoterminatetheWrite.Thet s A , t H A , t s d , and t H d timing is refer-
enced to the rising or falling edge of the signal that terminates the Write.
2. TestedwithOEHIGHforaminimumof4nsbeforeWE=LOWtoplacetheI/OinaHIGH-Zstate.
3. WEmaybeheldLOWacrossmanyaddresscyclesandtheLB, UB pins can be used to control the Write function.
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Rev. B
07/22/09
IS64WV3216BLL
IS61WV3216BLL
DATA RETENTION WAVEFORM (CE Controlled)
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol Parameter Test Condition Operations Min. Typ.(1) Max. Unit
Vd r Vd d forDataRetention SeeDataRetentionWaveform 1.8 — 3.6 V
Id r DataRetentionCurrent Vd d =1.8V,CE ≥Vd d –0.2V
c o m .
— 6 20 µA
I n d .
— 6 50
A u t o — 6 75
ts d r DataRetentionSetupTime SeeDataRetentionWaveform 0 — — ns
tr d r RecoveryTime SeeDataRetentionWaveform tr c — — ns
Note:
1.TypicalvaluesaremeasuredatVd d =2.5V,TA = 25
o
c. Not100%tested.
VDD
CE ≥ VDD
-0.2V
tSDR tRDR
VDR
CE
GND
1.65V
1.4V
DataRetentionMode
14 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
07/22/09
IS64WV3216BLL
IS61WV3216BLL
ORDERING INFORMATION
Industrial Temperature Range: –40°C to +85°C
Speed (ns) Order Part No. Package
12 IS61WV3216BLL-12TI PlasticTSOP
12 IS61WV3216BLL-12TLI PlasticTSOP,Lead-free
12 IS61WV3216BLL-12BI miniBGA (6mmx8mm)
12 IS61WV3216BLL-12BLI miniBGA (6mmx8mm),Lead-free
Temperature Range (A3): –40°C to +125°C
Speed (ns) Order Part No. Package
15(12*) IS64WV3216BLL-15TA3 PlasticTSOP
15(12*) IS64WV3216BLL-15TLA3 PlasticTSOP,Lead-free
15(12*) IS64WV3216BLL-15CTLA3 PlasticTSOP,Lead-free,CopperLead-frame
15(12*) IS64WV3216BLL-15BA3 miniBGA (6mmx8mm)
15(12*) IS64WV3216BLL-15BLA3 miniBGA (6mmx8mm),Lead-free
Note:
1.Speed=12nsforVd d =3.3V+10%.Speed=15nsforVd d =2.5V-3.6V.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 15
Rev. B
07/22/09
IS64WV3216BLL
IS61WV3216BLL
2. Reference document : JEDEC MO-207
1. CONTROLLING DIMENSION : MM .
NOTE :
08/12/2008
Package Outline
16 Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. B
07/22/09
IS64WV3216BLL
IS61WV3216BLL
2. DIMENSION D AND E1 DO NOT INCLUDE MOLD PROTRUSION.
3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION/INTRUSION.
1. CONTROLLING DIMENSION : MM
NOTE :
Θ
Θ
06/04/2008
Package Outline