VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series www.vishay.com Vishay Semiconductors High Voltage Phase Control Thyristor, 70 A FEATURES 2 (A) * High surge capability * High voltage input rectification * Compliant to RoHS Directive 2002/95/EC * Designed and qualified according to JEDEC-JESD47 Super TO-247 1 (K) (G) 3 APPLICATIONS * AC switches PRODUCT SUMMARY * High voltage input rectification (soft start) Package Super TO-247 Diode variation Single SCR IT(AV) 70 A VDRM/VRRM 1200 V, 1600 V VTM 1.4 V IGT 100 mA TJ - 40 C to 125 C * High current crow-bar * Other phase-control circuits * Designed to be used with Vishay input diodes, switches, and output rectifiers which are available in identical package outlines DESCRIPTION The VS-70TPS..PbF High Voltage Series of silicon controlled rectifiers are specifically designed for high and medium power switching, and phase control applications. MAJOR RATINGS AND CHARACTERISTICS PARAMETER TEST CONDITIONS VALUES IT(AV) Sinusoidal waveform 70 IRMS Lead current limitation 75 VRRM/VDRM Range UNITS A 1200/1600 V 1400 A 1.4 V dV/dt 500 V/s dI/dt 150 A/s - 40 to 125 C IRRM/IDRM AT 125 C mA ITSM 100 A, TJ = 25 C VT TJ VOLTAGE RATINGS PART NUMBER VRRM/VDRM, MAXIMUM REPETITIVE PEAK AND OFF-STATE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V VS-70TPS12PbF 1200 1300 VS-70TPS16PbF 1600 1700 15 Revision: 08-Feb-12 Document Number: 94391 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series www.vishay.com Vishay Semiconductors ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average on-state current IT(AV) Maximum continuous RMS on-state current as AC switch IT(RMS) Maximum peak, one-cycle non-repetitive surge current ITSM Maximum I2t for fusing I2t Maximum I2t for fusing I2t Low level value of threshold voltage VT(TO)1 High level value of threshold voltage VT(TO)2 Low level value of on-state slope resistance rt1 High level value of on-state slope resistance rt2 TEST CONDITIONS VALUES TC = 82 C, 180 conduction half sine wave 70 Lead current limitation 75 10 ms sine pulse, rated VRRM applied A 1200 10 ms sine pulse, no voltage reapplied 10 ms sine pulse, rated VRRM applied UNITS 1400 Initial TJ = TJ maximum 7200 10 ms sine pulse, no voltage reapplied 10 200 t = 0.1 ms to 10 ms, no voltage reapplied 102 000 0.916 1.21 TJ = 125 C 4.138 3.43 A2s A2s V m Maximum peak on-state voltage VTM 100 A, TJ = 25 C 1.4 V Maximum rate of rise of turned-on current dI/dt TJ = 25 C 150 A/s Maximum holding current IH Maximum latching current IL Maximum reverse and direct leakage current Maximum rate of rise of off-state voltage IRRM/IDRM dV/dt 200 TJ = 25 C 400 TJ = 25 C TJ = 125 C 1.0 VR = Rated VRRM/VDRM TJ = 125 C mA 15 500 V/s VALUES UNITS TRIGGERING PARAMETER Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage SYMBOL PGM PG(AV) TEST CONDITIONS 10 T = 30 s 2.5 IGM 2.5 - VGM Maximum required DC gate current to trigger VGT IGT Maximum DC gate voltage not to trigger VGD Maximum DC gate current not to trigger IGD Revision: 08-Feb-12 A 10 TJ = - 40 C Maximum required DC gate voltage to trigger W TJ = 25 C 1.8 Anode supply = 6 V resistive load 1.5 TJ = 125 C 1.1 TJ = - 40 C 150 TJ = 25 C 100 TJ = 125 C 80 TJ = 125 C, VDRM = Rated value V mA 0.25 V 6 mA Document Number: 94391 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES Maximum junction temperature range TJ - 40 to 125 Maximum storage temperature range TStg - 40 to 150 Maximum thermal resistance, junction to case RthJC Maximum thermal resistance, junction to ambient RthJA Typical thermal resistance, case to heatsink RthCS DC operation C 0.27 40 Mounting surface, smooth and greased C/W 0.2 Approximate weight Mounting torque UNITS 6 g 0.21 oz. minimum 6 (5) maximum 12 (10) kgf * cm (lbf * in) Marking device 70TPS12 Case style Super TO-247 70TPS16 RthJ-hs CONDUCTION PER JUNCTION SINE HALF WAVE CONDUCTION DEVICE VS-70TPS..PbF RECTANGULAR WAVE CONDUCTION 180 120 90 60 30 180 120 90 60 30 0.078 0.092 0.117 0.172 0.302 0.053 0.092 0.125 0.180 0.306 UNITS C/W 130 RthJC (DC) = 0.27 C/W 120 110 Conduction Angle 30 100 60 90 90 120 180 80 70 0 10 20 30 40 50 60 70 80 Maximum Allowable Case Temperature (C) Maximum Allowable Case Temperature (C) Note * The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC 130 RthJC (DC) = 0.27 C/W 120 DC 110 Conduction Period 100 180 90 80 30 70 60 90 120 60 0 10 20 30 40 50 60 70 80 90 Average On-state Current (A) Average On-state Current (A) Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics Revision: 08-Feb-12 Document Number: 94391 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series Peak Half Sine Wave On-state Current (A) 140 Vishay Semiconductors 1300 180 120 90 60 30 120 100 80 1100 1000 RMS Limit 60 40 Conduction Angle 20 Tj = 125C 0 0 At Any Rated Load Condition And With Rated Vrrm Applied Following Surge. Initial Tj = 125C @ 60 Hz 0.0083 s @ 50 Hz 0.0100 s 1200 10 20 30 40 50 60 70 900 800 700 600 500 1 10 100 Average On-state Current (A) Number Of Equal Amplitude Half Cycle Current Pulses (N) Fig. 3 - On-State Power Loss Characteristics Fig. 5 - Maximum Non-Repetitive Surge Current Peak Half Sine Wave On-state Current (A) Maximum Average On-state Power Loss (W) Maximum Average On-state Power Loss (W) www.vishay.com 150 180 120 90 60 30 120 90 DC RMS Limit 60 Conduction Period 30 Tj = 125C 0 0 15 30 45 60 75 1500 Maximum Non Repetitive Surge Current Versus Pulse Train Duration. Control Of Conduction May Not Be Maintained. 1300 Initial Tj = 125C No Voltage Reapplied 1200 Rated Vrrm Reapplied 1400 1100 1000 900 800 700 600 500 0.01 0.1 1 Average On-state Current (A) Pulse Train Duration (s) Fig. 4 - On-State Power Loss Characteristics Fig. 6 - Maximum Non-Repetitive Surge Current Instantaneous On-state Current (A) 1000 Tj = 125C 100 10 Tj = 25C 1 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state Voltage (V) Fig. 7 - On-State Voltage Drop Characteristics Revision: 08-Feb-12 Document Number: 94391 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series www.vishay.com 10 Rectangular gate pulse a) Recommended load line for rated diF/dt: 20 V, 30 tr = 0.5 s, tp > = 6 s (1) PGM = 100 W, tp = 500 s (2) PGM = 50 W, tp = 1 ms (3) PGM = 20 W, tp = 25 ms (4) PGM = 10 W, tp = 5 ms b) Recommended load line for < = 30 % rated diF/dt: 20 V, 65 tr = 1 s, tp > = 6 s (a) (b) VGD TJ = - 40 C TJ = 25 C 1 TJ = 125 C Instantaneous Gate Voltage (V) 100 Vishay Semiconductors 0.01 (2) (1) Frequency Limited by PG(AV) IGD 0.1 0.001 (3) (4) 0.1 1 10 100 1000 Transient Thermal Impedance ZthJC (C/W) Instantaneous Gate Current (A) Fig. 8 - Gate Characteristics 1 Steady State Value (DC Operation) 0.1 D = 0.50 D = 0.33 D = 0.25 D = 0.17 D = 0.08 Single Pulse 70TPS.. Series 0.01 0.0001 0.001 0.01 0.1 Square Wave Pulse Duration (s) 1 10 Fig. 9 - Thermal Impedance ZthJC Characteristics Revision: 08-Feb-12 Document Number: 94391 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 70 T P S 16 PbF 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - Current rating (70 = 70 A) 3 - Circuit configuration: T = Thyristor 4 - Package: P = Super TO-247 5 - Type of silicon: S = Standard recovery rectifier 6 - Voltage code x 100 = VRRM 7 - PbF = Lead (Pb)-free 12 = 1200 V 16 = 1600 V ORDERING INFORMATION (example) PREFERED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-70TPS12PbF 25 500 Antistatic plastic tube VS-70TPS16PbF 25 500 Antistatic plastic tube LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95073 Part marking information www.vishay.com/doc?95070 Revision: 08-Feb-12 Document Number: 94391 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions Vishay High Power Products Super TO-247 DIMENSIONS in millimeters (inches) 16.10 (0.632) 15.10 (0.595) 2xR A 0.13 (0.005) 5.50 (0.216) 4.50 (0.178) 2.15 (0.084) 1.45 (0.058) 4 20.80 (0.818) 19.80 (0.780) C 1 2 3 4.25 (0.167) 3.85 (0.152) B 14.80 (0.582) 13.80 (0.544) 1.20 (0.047) 3x 3x 0.90 (0.035) 0.25 (0.010) M B A M 5.45 (0.215) 2x 2.35 (0.092) 1.65 (0.065) 0.25 (0.010) M B A M 13.90 (0.547) 13.30 (0.524) O 1.60 (0.063) MAX. 1.30 (0.051) 0.70 (0.028) 16.10 (0.633) 15.50 (0.611) 4 Section E - E Lead assignments E E MOSFET IGBT 1 - Gate 2 - Drain 3 - Source 4 - Drain 1 - Gate 2 - Collector 3 - Emitter 4 - Collector Notes (1) Dimension and tolerancing per ASME Y14.5M-1994 (2) Controlling dimension: millimeter (3) Outline conforms to JEDEC outline TO-274AA Document Number: 95073 Revision: 10-Dec-08 For technical questions concerning discrete products, contact: diodes-tech@vishay.com For technical questions concerning module products, contact: ind-modules@vishay.com www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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