VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series
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Revision: 08-Feb-12 1Document Number: 94391
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High Voltage Phase Control Thyristor, 70 A
FEATURES
• High surge capability
• High voltage input rectification
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to
JEDEC-JESD47
APPLICATIONS
• AC switches
• High voltage input rectification (soft start)
• High current crow-bar
• Other phase-control circuits
• Designed to be used with Vishay input diodes, switches,
and output rectifiers which are available in identical
package outlines
DESCRIPTION
The VS-70TPS..PbF High Voltage Series of silicon
controlled rectifiers are specifically designed for high and
medium power switching, and phase control applications.
PRODUCT SUMMARY
Package Super TO-247
Diode variation Single SCR
IT(AV) 70 A
VDRM/VRRM 1200 V, 1600 V
VTM 1.4 V
IGT 100 mA
TJ- 40 °C to 125 °C
(G) 3
2
(A)
1 (K)
Super TO-247
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IT(AV) Sinusoidal waveform 70
A
IRMS Lead current limitation 75
VRRM/VDRM Range 1200/1600 V
ITSM 1400 A
VT100 A, TJ = 25 °C 1.4 V
dV/dt 500 V/μs
dI/dt 150 A/μs
TJ- 40 to 125 °C
VOLTAGE RATINGS
PART NUMBER
VRRM/VDRM, MAXIMUM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
IRRM/IDRM
AT 125 °C
mA
VS-70TPS12PbF 1200 1300
15
VS-70TPS16PbF 1600 1700
VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series
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Revision: 08-Feb-12 2Document Number: 94391
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ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current IT(AV) TC = 82 °C, 180° conduction half sine wave 70
A
Maximum continuous RMS on-state
current as AC switch IT(RMS) Lead current limitation 75
Maximum peak, one-cycle
non-repetitive surge current ITSM
10 ms sine pulse, rated VRRM applied
Initial TJ = TJ
maximum
1200
10 ms sine pulse, no voltage reapplied 1400
Maximum I2t for fusing I2t10 ms sine pulse, rated VRRM applied 7200 A2s
10 ms sine pulse, no voltage reapplied 10 200
Maximum I2t for fusing I2t t = 0.1 ms to 10 ms, no voltage reapplied 102 000 A2s
Low level value of threshold voltage VT(TO)1
TJ = 125 °C
0.916 V
High level value of threshold voltage VT(TO)2 1.21
Low level value of on-state slope resistance rt1 4.138 m
High level value of on-state slope resistance rt2 3.43
Maximum peak on-state voltage VTM 100 A, TJ = 25 °C 1.4 V
Maximum rate of rise of turned-on current dI/dt TJ = 25 °C 150 A/μs
Maximum holding current IHTJ = 25 °C 200
mA
Maximum latching current IL400
Maximum reverse and direct leakage current IRRM/IDRM
TJ = 25 °C
VR = Rated VRRM/VDRM
1.0
TJ = 125 °C 15
Maximum rate of rise of off-state voltage dV/dt TJ = 125 °C 500 V/μs
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum peak gate power PGM T = 30 μs 10 W
Maximum average gate power PG(AV) 2.5
Maximum peak gate current IGM 2.5 A
Maximum peak negative gate voltage - VGM 10
V
Maximum required DC gate voltage to trigger VGT
TJ = - 40 °C
Anode supply = 6 V resistive load
1.8
TJ = 25 °C 1.5
TJ = 125 °C 1.1
Maximum required DC gate current to trigger IGT
TJ = - 40 °C 150
mATJ = 25 °C 100
TJ = 125 °C 80
Maximum DC gate voltage not to trigger VGD TJ = 125 °C, VDRM = Rated value 0.25 V
Maximum DC gate current not to trigger IGD 6mA
VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series
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Revision: 08-Feb-12 3Document Number: 94391
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Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
Fig. 1 - Current Rating Characteristics Fig. 2 - Current Rating Characteristics
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range TJ- 40 to 125 °C
Maximum storage temperature range TStg - 40 to 150
Maximum thermal resistance,
junction to case RthJC DC operation 0.27
°C/W
Maximum thermal resistance,
junction to ambient RthJA 40
Typical thermal resistance,
case to heatsink RthCS Mounting surface, smooth and greased 0.2
Approximate weight 6g
0.21 oz.
Mounting torque minimum 6 (5) kgf · cm
(lbf · in)
maximum 12 (10)
Marking device Case style Super TO-247 70TPS12
70TPS16
RthJ-hs CONDUCTION PER JUNCTION
DEVICE SINE HALF WAVE CONDUCTION RECTANGULAR WAVE CONDUCTION UNITS
180° 120° 90° 60° 30° 180° 120° 90° 60° 30°
VS-70TPS..PbF 0.078 0.092 0.117 0.172 0.302 0.053 0.092 0.125 0.180 0.306 °C/W
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
70
80
90
100
110
120
130
0 1020304050607080
30˚
60˚ 90˚ 120˚
180˚
Conduction Angle
RthJC (DC) = 0.27 ˚C/W
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
60
70
80
90
100
110
120
130
0 102030405060708090
DC
30˚ 60˚ 90˚ 120˚
180˚
Conduction Period
RthJC (DC) = 0.27 ˚C/W
VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series
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Revision: 08-Feb-12 4Document Number: 94391
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Fig. 3 - On-State Power Loss Characteristics
Fig. 4 - On-State Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - On-State Voltage Drop Characteristics
Average On-state Current (A)
Maximum Average On-state Power Loss (W)
0
20
40
60
80
100
120
140
0 10203040506070
RMS Limit
Conduction Angle
180˚
120˚
90˚
60˚
30˚
Tj = 125˚C
Average On-state Current (A)
Maximum Average On-state Power Loss (W)
0
30
60
90
120
150
01530456075
RMS Limit
Conduction Period
Tj = 125˚C
180˚
120˚
90˚
60˚
30˚
DC
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
500
600
700
800
900
1000
1100
1200
1300
11010
0
At Any Rated Load Condition And With
Rated Vrrm Applied Following Surge.
Initial Tj = 125˚C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
Pulse Train Duration (s)
Peak Half Sine Wave On-state Current (A)
500
600
700
800
900
1000
1100
1200
1300
1400
1500
0.01 0.1 1
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial Tj = 125˚C
No Voltage Reapplied
Rated Vrrm Reapplied
Instantaneous On-state Voltage (V)
Instantaneous On-state Current (A)
1
10
100
1000
0.511.522.533.5
Tj = 25˚C
Tj = 125˚C
VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series
www.vishay.com Vishay Semiconductors
Revision: 08-Feb-12 5Document Number: 94391
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Fig. 8 - Gate Characteristics
Fig. 9 - Thermal Impedance ZthJC Characteristics
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
0.001 0.01 0.1 1 10 100 1000
0.1
1
10
100
TJ = 25 °C
TJ = - 40 °C
TJ = 125 °C
Rectangular gate pulse
a) Recommended load line for
rated diF/dt: 20 V, 30 Ω
tr = 0.5 μs, tp > = 6 μs
b) Recommended load line for
< = 30 % rated diF/dt: 20 V, 65 Ω
tr = 1 μs, tp > = 6 μs
(a)
(b)
(1)
(2)
(4) (3)
Frequency Limited by PG(AV)
VGD
IGD
(1) PGM = 100 W, tp = 500 μs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
Square Wave Pulse Duration (s)
Transient Thermal Impedance ZthJC (°C/W)
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Steady State Value
(DC Operation)
Single Pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
70TPS.. Series
VS-70TPS12PbF, VS-70TPS16PbF High Voltage Series
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Revision: 08-Feb-12 6Document Number: 94391
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ORDERING INFORMATION TABLE
ORDERING INFORMATION (example)
PREFERED P/N QUANTITY PER T/R MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION
VS-70TPS12PbF 25 500 Antistatic plastic tube
VS-70TPS16PbF 25 500 Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95073
Part marking information www.vishay.com/doc?95070
2- Current rating (70 = 70 A)
1- Vishay Semiconductors product
3- Circuit configuration:
4- Package:
5
T = Thyristor
- Type of silicon:
6- Voltage code x 100 = VRRM
P = Super TO-247
S = Standard recovery rectifier
7-PbF = Lead (Pb)-free
12 = 1200 V
16 = 1600 V
Device code
5
132 4 6 7
VS- 70 T P S 16 PbF
Document Number: 95073 For technical questions concerning discrete products, contact: diodes-tech@vishay.com www.vishay.com
Revision: 10-Dec-08 For technical questions concerning module products, contact: ind-modules@vishay.com 1
Super TO-247
Outline Dimensions
Vishay High Power Products
DIMENSIONS in millimeters (inches)
Notes
(1) Dimension and tolerancing per ASME Y14.5M-1994
(2) Controlling dimension: millimeter
(3) Outline conforms to JEDEC outline TO-274AA
2.15 (0.084)
1.45 (0.058)
0.13 (0.005)
5.50 (0.216)
4.50 (0.178)
4
B
3 x 1.20 (0.047)
0.90 (0.035) 2.35 (0.092)
1.65 (0.065)
A
16.10 (0.632)
15.10 (0.595)
2 x R
20.80 (0.818)
19.80 (0.780)
C
14.80 (0.582)
13.80 (0.544)
5.45 (0.215)
2 x
4.25 (0.167)
3.85 (0.152)
3 x
0.25 (0.010) B A
MM
0.25 (0.010) B A
MM
13.90 (0.547)
13.30 (0.524)
1.30 (0.051)
0.70 (0.028)
16.10 (0.633)
15.50 (0.611)
4
EE
Ø 1.60 (0.063)
MAX.
Section E - E
Lead assignments
MOSFET
1 - Gate
2 - Drain
3 - Source
4 - Drain
IGBT
1 - Gate
2 - Collector
3 - Emitter
4 - Collector
321
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Revision: 12-Mar-12 1Document Number: 91000
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