NOTES : 1. 300us Pulse Width, 2% Duty Cycle.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Thermal Resistance Junction to Case.
MBR1070CT thru 10100CT
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 ambient temperature unless otherwise specified.℃
FEATURES
Metal of silicon rectifier,majority carrier conducton
Guard ring for transient protection
Low power loss, high efficiency
High current capability, low VF
High surge capacity
Plastic package has UL flammability classification 94V-0
For use in low voltage,high frequency inverters,free
whelling,and polarity protection applications
IEC 61000-4-2, level 4 (ESD), >15KV (air)
MECHANICAL DATA
Case : TO-220AB molded plastic
Polarity : As marked on the body
Weight : 0.08 ounces, 2.24 grams
Mounting position : Any
Max. mounting torque = 0.5 N.m (5.1 Kgf.cm)
TO-220AB
All Dimensions in millimeter
TO-220AB
DIM. MIN. MAX.
A
C
D
E
F
G
H
B
14.40 15.20
10.67 9.65
2.54 3.43
6.86
5.84
8.26 9.28
- 4.20
12.70 14.73
0.51
2.79
N
M
L
K
J
I 1.14
2.29
0.64 0.30
3.53 4.09
3.56 4.83
1.14 1.40
2.92
2.03
PIN 1
PIN 3
PIN 2
CASE
A
B
C
K
J
I
H
G
F
E
D
N
M
L
H
PIN
1 32
SCHOTTKY BARRIER RECTIFIERS REVERSE VOLTAGE - 70 to 100 Volts
FORWARD CURRENT - 10 Amperes
10
120
10000
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
Peak Forward Surge Current
8.3ms single half sine-wave
superimposed on rated load
Maximum Recurrent Peak
Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
C
J
Typical Junction Capacitance, per element (Note
2) pF
I
R
Maximum DC Reverse Current
at Rated DC Blocking Voltage
@T
J
=25 ℃
@T
J
=125 ℃
mA
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
V
F
Maximum Forward
Voltage, (Note 1) V
Voltage Rate of Change (Rated VR)
@I
F
=5A
@I
F
=5A
@I
F
=10A
@I
F
=10A
dv/dt
Maximum Average Forward RectifiedCurrent
at T
c
=100 (See Fig.1) ℃
T
J
Operating Temperature Range
℃
-55 to +150
T
STG
Storage Temperature Range
℃
-55 to +175
Typical Thermal Resistance (Note 3)
R
0JC
/W
℃
3.0
0.01
15
0.85
0.75
0.95
0.85
300
MBR1070CT
70
49
70
MBR10100CT
100
70
100
MBR1090CT
90
63
90
MBR1080CT
80
56
80
T
J
=25 ℃
T
J
=125 ℃
T
J
=25 ℃
T
J
=125 ℃
V/us
SEMICONDUCTOR
LITE-ON
REV. 8, Jul-2012, KTHC13
@IR
=100uA
@IR
=100uA
@IR
=100uA
0.1
1
10
100
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
RATING AND CHARACTERISTIC CURVES
MBR1070CT thru MBR10100CT
PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%)
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS
REVERSE CURRENT ,(mA)
20 40 120 140
0.001
0.1
1.0
100
10
60 80 100
TJ= 100 ℃
0.01
TJ= 25 ℃
INSTANTANEOUS FORWARD VOLTAGE , (V)
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT
,(A)
PULSE WIDTH 300us
2% Duty cycle
TJ= 125 ℃
FIG.5 - TYPICAL JUNCTION CAPACITANCE
CAPACITANCE , (pF)
REVERSE VOLTAGE , (V)
10
1100
1000
100
10
0.1
0
4
TJ= 25 C, f= 1MHz
TJ= 75 ℃
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
NUMBER OF CYCLES AT 60Hz
PEAK FORWARD SURGE CURRENT, (A)
15 10 50 100
220
0
20
40
60
80
100
120
FIG.1 - FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT, (A)
25
75 100 125 150
4
0
50
10
175
8.3ms Single Half-Sine-Wave
8
0
RESISTIVE OR INDUCTIVE LOAD
CASE TEMPERATURE , ( )℃
6
2
T
J
= 25
℃
Legal Disclaimer Notice
MBR1070CT thru MBR10100CT
LSC reserves the right to make changes to this document and its products and
specifications at any time without notice. Customers should obtain and confirm
the latest product information and specifications before final design, purchase or
use.
LSC makes no warranty, representation or guarantee regarding the suitability of
its products for any particular purpose, nor does LSC assume any liability for
application assistance or customer product design. LSC does not warrant or
accept any liability with products which are purchased or used for any
unintended or unauthorized application.
No license is granted by implication or otherwise under any intellectual property
rights of LSC.
LSC products are not authorized for use as critical components in life support
devices or systems without express written approval of LSC.
Important Notice and Disclaimer
