2.4 GHz Power Amplifier SST12LP14 A Microchip Technology Company Data Sheet The SST12LP14 is a high-performance power amplifier IC based on the highlyreliable InGaP/GaAs HBT technology. Easily configured for high-power, high-efficiency applications with superb power-added efficiency, it typically provides 30 dB gain with 22% power added efficiency. The SST12LP14 has excellent linearity while meeting 802.11g spectrum mask at 23 dBm.It is ideal for the final stage power amplification in battery-powered 802.11g/b WLAN transmitter applications, and is offered in 16-contact VQFN package. Features Applications * High Gain: * WLAN (IEEE 802.11g/b) - Typically 30 dB gain across 2.4~2.5 GHz over temperature 0C to +80C * Home RF * Cordless phones * High linear output power: - >26.5 dBm P1dB - Meets 802.11g OFDM ACPR requirement up to 23 dBm - Added EVM ~4% up to 20 dBm for 54 Mbps 802.11g signal - Meets 802.11b ACPR requirement up to 24 dBm * 2.4 GHz ISM wireless equipment * High power-added efficiency/Low operating current for both 802.11g/b applications - ~22% @ POUT = 22 dBm for 802.11g - ~26% @ POUT = 23.5 dBm for 802.11b * Built-in Ultra-low IREF power-up/down control - IREF <4 mA * Low idle current - ~60 mA ICQ * High-speed power-up/down - Turn on/off time (10%~90%) <100 ns - Typical power-up/down delay with driver delay included <200 ns * High temperature stability - ~1 dB gain/power variation between 0C to +80C - ~1 dB detector variation over 0C to +80C * Low shut-down current (< 0.1 A) * On-chip power detection * 25 dB dynamic range on-chip power detection * Simple input/output matching * Packages available - 16-contact VQFN (3mm x 3mm) - Non-Pb (lead-free) packages available (c)2011 Silicon Storage Technology, Inc. www.microchip.com DS75031A 10/11 2.4 GHz Power Amplifier SST12LP14 A Microchip Technology Company Data Sheet Product Description The SST12LP14 is a high-performance power amplifier IC based on the highly-reliable InGaP/ GaAs HBT technology. The SST12LP14 can be easily configured for high-power, high-efficiency applications with superb power-added efficiency while operating over the 2.4~2.5 GHz frequency band. It typically provides 30 dB gain with 22% power-added efficiency @ POUT = 22 dBm for 802.11g and 27% poweradded efficiency @ POUT = 24 dBm for 802.11b. The SST12LP14 has excellent linearity, typically <4% added EVM up to 20 dBm output power which is essential for 54 Mbps 802.11g operation while meeting 802.11g spectrum mask at 23 dBm. The SST12LP14 also has wide-range (>25 dB), temperature-stable (~1 dB over 80C), single-ended/differential power detectors which lower users' cost on power control. The power amplifier IC also features easy board-level usage along with high-speed power-up/ down control. Ultra-low reference current (total IREF <4 mA) makes the SST12LP14 controllable by an on/off switching signal directly from the baseband chip. These features coupled with low operating current make the SST12LP14 ideal for the final stage power amplification in battery-powered 802.11g/b WLAN transmitter applications. The SST12LP14 is offered in 16-contact VQFN package. See Figure 2 for pin assignments and Table 1 for pin descriptions. (c)2011 Silicon Storage Technology, Inc. DS75031A 2 10/11 2.4 GHz Power Amplifier SST12LP14 A Microchip Technology Company Data Sheet VCC1 NC NC NC Functional Blocks 16 15 14 13 NC 1 12 VCC2 RFIN 2 11 RFOUT RFIN 3 10 RFOUT Bias Circuit NC 4 9 5 6 7 8 Det VCCb VREF1 VREF2 Det_ref 1279 B1.1 Figure 1: Functional Block Diagram (c)2011 Silicon Storage Technology, Inc. DS75031A 3 10/11 2.4 GHz Power Amplifier SST12LP14 A Microchip Technology Company Data Sheet NC VCC1 NC NC NC Pin Assignments 16 15 14 13 12 VCC2 1 Top View RFIN 2 RFIN 3 NC (contacts facing down) 11 RFOUT 10 RFOUT RF and DC GND 0 4 5 6 7 8 9 Det VCCb VREF1 VREF2 Det_ref 1279 16-vqfn P1.1 Figure 2: Pin Assignments for 16-contact VQFN Pin Descriptions Table 1: Pin Description Symbol Pin No. Pin Name Type1 Function GND 0 Ground The center pad should be connected to RF ground with several low inductance, low resistance vias. NC 1 No Connection RFIN 2 RFIN 3 NC 4 No Connection VCCb 5 Power Supply PWR Supply voltage for bias circuit VREF1 6 PWR 1st stage idle current control VREF2 7 PWR 2nd stage idle current control Det_ref 8 O On-chip power detector reference Det 9 O On-chip power detector RFOUT 10 O RF output Unconnected pins. I I RF input, DC decoupled RF input, DC decoupled Unconnected pins. RFOUT 11 VCC2 12 Power Supply O NC 13 No Connection Unconnected pins. NC 14 No Connection Unconnected pins. NC 15 No Connection VCC1 16 Power Supply PWR RF output Power supply, 2nd stage Unconnected pins. PWR Power supply, 1st stage T1.0 75031 1. I=Input, O=Output (c)2011 Silicon Storage Technology, Inc. DS75031A 4 10/11 2.4 GHz Power Amplifier SST12LP14 A Microchip Technology Company Data Sheet Electrical Specifications The AC and DC specifications for the power amplifier interface signals. Refer to Table 3 for the DC voltage and current specifications. Refer to Figures 3 through 13 for the RF performance. Absolute Maximum Stress Ratings (Applied conditions greater than those listed under "Absolute Maximum Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.) Supply Voltage at pins 5, 12, and 16 (VCC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +4.6V Reference voltage to pin 6 (VREF1) and pin 7 (VREF2) . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +3.6V DC supply current (ICC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Operating Temperature (TA) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +85C Storage Temperature (TSTG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40C to +120C Maximum Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C Surface Mount Solder Reflow Temperature: . . . . . . . . . . . . . . "with-Pb" units1: 240C for 3 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . "non-Pb" units: 260C for 3 seconds 1. Certain "with-Pb" package types are capable of 260C for 3 seconds; please consult the factory for the latest information. Table 2: Operating Range Range Ambient Temp VDD Industrial -40C to +85C 3.3V T2.1 75031 Table 3: DC Electrical Characteristics Symbol Parameter VCC Supply Voltage at pins 5, 12, 16 ICC Supply Current Min. Typ Max. Unit Test Conditions 3.0 4.2 V for 802.11g, 24 dBm 290 mA for 802.11g, 25 dBm 340 mA ICQ Idle current for 802.11g to meet EVM @ 20.5 dBm IOFF Shut down current VREG1 Reference Voltage for 1st Stage, with 120 resistor 2.7 VREG2 Reference Voltage for 2nd Stage, with 360 resistor 2.7 VREG1 Reference Voltage for 1st Stage, with 220 resistor VREG2 Reference Voltage for 2nd Stage, with 590 resistor 3.3 55 mA 0.1 A 2.9 3.1 V 2.9 3.1 V 2.9 3.1 3.3 V 2.9 3.1 3.3 V T3.0 75031 (c)2011 Silicon Storage Technology, Inc. DS75031A 5 10/11 2.4 GHz Power Amplifier SST12LP14 A Microchip Technology Company Data Sheet Table 4: AC Electrical Characteristics for Configuration Symbol Parameter Min. FL-U Frequency range 2400 POUT Output power @ PIN = -7 dBm 11b signals @ PIN = -10 dBm 11g signals Typ Max. Unit 2485 MHz 23 dBm 20 30 dBm G Small signal gain GVAR1 Gain variation over band (2400~2485 MHz) GVAR2 Gain ripple over channel (20 MHz) ACPR Meet 11b spectrum mask 23 dBm Meet 11g OFDM 54 MBPS spectrum mask 22 dBm Added EVM @ 20 dBm output with 11g OFDM 54 MBPS signal 2f, 3f, 4f, 5f Harmonics at 22 dBm, without trapping capacitors 31 33 0.5 0.2 dB dB dB 3 % -40 dBc T4.0 75031 (c)2011 Silicon Storage Technology, Inc. DS75031A 6 10/11 2.4 GHz Power Amplifier SST12LP14 A Microchip Technology Company Data Sheet Typical Performance Characteristics Test Conditions: VCC = 3.3V, TA = 25C Figure 3: S-Parameters Figure 4: Input Return Loss (c)2011 Silicon Storage Technology, Inc. DS75031A 7 10/11 2.4 GHz Power Amplifier SST12LP14 A Microchip Technology Company Data Sheet Figure 5: In-band Gain Flatness (c)2011 Silicon Storage Technology, Inc. DS75031A 8 10/11 2.4 GHz Power Amplifier SST12LP14 A Microchip Technology Company Data Sheet Typical Performance Characteristics Test Conditions: F1 = 2.45 GHz, F2 = 2.451 GHz Figure 6: POUT vs PIN Figure 7: IM3 vs POUT (c)2011 Silicon Storage Technology, Inc. DS75031A 9 10/11 2.4 GHz Power Amplifier SST12LP14 A Microchip Technology Company Data Sheet Figure 8: Detectors vs POUT Figure 9: Gain vs POUT Figure 10:PAE for Two Tone (c)2011 Silicon Storage Technology, Inc. DS75031A 10 10/11 2.4 GHz Power Amplifier SST12LP14 A Microchip Technology Company Data Sheet Typical Performance Characteristics Test Conditions: VCC = 3.3V, TA = 25C, F = 2.45 GHz, 54 Mbps 802.11g OFDM signal Figure 11:802.11g Spectrum at 22/23 dBm, DC current 210/240 mA Figure 12:802.11g Added EVM for 54 Mbps 802.11g Signal (c)2011 Silicon Storage Technology, Inc. DS75031A 11 10/11 2.4 GHz Power Amplifier SST12LP14 A Microchip Technology Company Data Sheet Figure 13:802.11b Spectrum at 24 dBm, DC current consumption 280 mA 100pF 0.1 F 0.1 F 4.7 F Vcc 12nH/06 03 16 100pF 50/150mil 15 13 14 1 12 2 11 3 10 50 /140mil 100pF 50 RFOUT 50 RFin 2.0pF 2.4pF Bias circuit 4 9 5 0.1 F 6 10pF R1 120 7 8 10pF 10pF 10pF R2 360* R1=120, R2=360 and VREG1=VREG2=2.8~3.0V or R1=220, R2=590 and VREG1=VREG2=2.9~3.3V 1279 Schematic.0.1 VREG1 VREG2 Det_ref Det Figure 14:Typical Schematic for High-Power, High-Efficiency 802.11b/g Applications (c)2011 Silicon Storage Technology, Inc. DS75031A 12 10/11 2.4 GHz Power Amplifier SST12LP14 A Microchip Technology Company Data Sheet Product Ordering Information SST 12 LP XX XX 14 XX - QVCE XXXX Environmental Attribute E1 = non-Pb contact (lead) finish Package Modifier C = 16 contact Package Type QV = VQFN Product Family Identifier Product Type P = Power Amplifier Voltage L = 3.0-3.6V Frequency of Operation 2 = 2.4 GHz Product Line 1 = RF product 1. Environmental suffix "E" denotes non-Pb solder. SST non-Pb solder devices are "RoHS Compliant". Valid combinations for SST12LP14 SST12LP14-QVC SST12LP14-QVCE SST12LP14 Evaluation Kits SST12LP14-QVC-K SST12LP14-QVCE-K Note:Valid combinations are those products in mass production or will be in mass production. Consult your SST sales representative to confirm availability of valid combinations and to determine availability of new combinations. (c)2011 Silicon Storage Technology, Inc. DS75031A 13 10/11 2.4 GHz Power Amplifier SST12LP14 A Microchip Technology Company Data Sheet Packaging Diagrams TOP VIEW SIDE VIEW BOTTOM VIEW See notes 2 and 3 0.2 Pin 1 Pin 1 1.7 3.00 0.075 1.7 0.5 BSC 0.075 0.45 0.35 0.05 Max 3.00 0.075 1.00 0.80 0.30 0.18 1mm 16-vqfn-3x3-QVC-2.0 Note: 1. Complies with JEDEC JEP95 MO-220J, variant VEED-4 except external paddle nominal dimensions. 2. From the bottom view, the pin 1 indicator ma y be either a 45-degree chamfer or a half-circle notch. 3. The external paddle is electrically connected to the die back-side and possibly to certain VSS leads. This paddle can be soldered to the PC board; it is suggested to connect this paddle to the VSS of the unit. Connection of this paddle to any other voltage potential can result in shorts and/or electrical malfunction of the device. 4. Untoleranced dimensions are nominal target dimensions. 5. All linear dimensions are in millimeters (max/min). Figure 15:16-Contact Very-thin Quad Flat No-lead (VQFN) SST Package Code: QVC (c)2011 Silicon Storage Technology, Inc. DS75031A 14 10/11 2.4 GHz Power Amplifier SST12LP14 A Microchip Technology Company Data Sheet Table 5:Revision History Revision 00 01 02 A Description * * * * * * Date DS75031: SST conversion of data sheet GP1214 Updated document status from Preliminary Specification to Data Sheet Updated "Contact Information" on page 12. Applied new document format Released document under letter revision system Updated Spec number from S71279 to DS75031 Jan 2005 Apr 2008 Feb 2009 Oct 2011 ISBN:978-1-61341-699-0 (c) 2011 Silicon Storage Technology, Inc-a Microchip Technology Company. All rights reserved. SST, Silicon Storage Technology, the SST logo, SuperFlash, MTP, and FlashFlex are registered trademarks of Silicon Storage Technology, Inc. MPF, SQI, Serial Quad I/O, and Z-Scale are trademarks of Silicon Storage Technology, Inc. All other trademarks and registered trademarks mentioned herein are the property of their respective owners. Specifications are subject to change without notice. Refer to www.microchip.com for the most recent documentation. For the most current package drawings, please see the Packaging Specification located at http://www.microchip.com/packaging. Memory sizes denote raw storage capacity; actual usable capacity may be less. SST makes no warranty for the use of its products other than those expressly contained in the Standard Terms and Conditions of Sale. For sales office locations and information, please see www.microchip.com. Silicon Storage Technology, Inc. A Microchip Technology Company www.microchip.com (c)2011 Silicon Storage Technology, Inc. DS75031A 15 10/11