A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subjec t to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIO NS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 20 mA 60 V
BVCES IC = 20 mA 60 V
BVEBO IE = 2.0 mA 4.0 V
ICBO VCE = 50 V 2.0 mA
hFE VCE = 5.0 V IC = 500 mA 10 100 ---
Cob VCB = 50 V f = 1.0 MHz 10 15 pF
PG
η
ηη
ηC VCC = 50 V POUT = 35 W f = 1090 MHz 10
30 12.4
34 dB
%
NPN SILICON RF POWER TRANSISTOR
MRF1035MB
DESCRIPTION:
The ASI MRF1035MB is Designed
for Class C, DME/TACAN Applicat ions
up to 1090 MHz.
FEATURES:
• Internal I nput Matching Network
• PG = 10 dB at 35 W/1090 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 2.0 A
VCBO 60 V
VCES 60 V
PDISS 35 W PEAK
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 5.0 °C/W
PACKAGE STYLE .280 4L PILL (A)
MINIMUM
inches / mm
.004 / 0.10
1.000 / 2 5.40
.050 / 1.27
B
C
D
E
F
A
MAXIMUM
.065 / 1.65
.145 / 3.68
.007 / 0.18
inches / mm
.205 / 5.21
DIM
.095 / 2.41 .105 / 2.67
F
E
A
.100x45°
D
B
C
ØG
G.275 / 6.99 .285 / 7.21
.195 / 4.95
C
B
B
E
