○Product structure：Silicon monolithic integrated circuit ○This product is not designed protection against radioactive rays
1/31 TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･14･001
www.rohm.com
Datashee
t
Serial EEPROM Series Standard EEPROM
SPI BUS EEPROM
BR25Sxxx-W Series
(32K 64K 128K 256K)
●General Description
BR25Sxxx-W series is a serial EEPROM of SPI BUS interface method
●Features
High speed clock action up to 20MHz (Max.)
Wait function by HOLDB terminal
Part or whole of memory arrays settable as read only
memory area by program
1.7V to 5.5V single power source action most suitable
for battery use
Page write mode useful for initial value write at
factory shipment
Highly reliable connection by Au pad and Au wire
For SPI bus interface (CPOL, CPHA) = (0, 0), (1, 1)
Auto erase and auto end function at data rewrite
Low current consumption
¾ At write action (5V) : 1.5mA (Typ.)
¾ At read action (5V) : 1.0mA (Typ.)
¾ At standby action (5V) : 0.1μA ( Typ.)
Address auto increment function at read action
Write mistake prevention function
¾ Write prohibition at power on
¾ Write prohibition by command code (WRDI)
¾ Write prohibition by WP pin
¾ Write prohibition block setting by status registers
(BP1, BP0)
¾ Write mistake prevention function at low voltage
Data kept for 40 years
Data rewrite up to 1,000,000 times
Data at shipment
Memory array: FFh
Status register: WPEN, BP1, BP0 : 0
●Packages W(Typ.) x D(Typ.) x H(Max.)
●Page write
Page 32Byte 64Byte
Part Number BR25S320-W
BR25S640-W BR25S128-W
BR25S256-W
●BR25Sxxx-W Series
Capacity Bit format
Power source
voltage SOP8 SOP-J8 SSOP-B8 TSSOP-B8 MSOP8 TSSOP-B8J
VSON008
X2030
32Kbit 4K×8 1.7V to 5.5V ● ● ● ● ● ● ●
64Kbit 8K×8 1.7V to 5.5V ● ● ● ● ● ●
128Kbit 16K×8 1.7V to 5.5V ● ● ● ●
256Kbit 32K×8 1.7V to 5.5V ● ●
V
SON008X2030
2.00mm x 3.00mm x 0.60mm
TSSOP-B8
3.00mm x 6.40mm x 1.20mm
SOP8
5.00mm x 6.20mm x 1.71mm
SOP- J8
4.90mm x 6.00mm x 1.65mm TSSOP-B8J
3.00mm x 4.90mm x 1.10mm
MSOP8
2.90mm x 4.00mm x 0.90mm
SSOP-B8
3.00mm x 6.40mm x 1.35mm
Datasheet
2/31
BR25Sxxx-W Series (32K 64K 128K 256K)
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
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●Absolute Maximum Ratings (Ta=25℃)
Parameter Symbol Ratings Unit Remarks
Supply Voltage VCC -0.3 to +6.5 V
450 (SOP8) When using at Ta=25℃ or higher 4.5mW to be reduced per 1℃.
450 (SOP-J8) When using at Ta=25℃ or higher 4.5mW to be reduced per 1℃.
300 (SSOP-B8) When using at Ta=25℃ or higher 3.0mW to be reduced per 1℃.
330 (TSSOP-B8) When using at Ta=25℃ or higher 3.3mW to be reduced per 1℃.
310 (TSSOP-B8J) When using at Ta=25℃ or higher 3.1mW to be reduced per 1℃.
310 (MSOP8) When using at Ta=25℃ or higher 3.1mW to be reduced per 1℃.
Power Dissipation Pd
300 (VSON008X2030)
mW
When using at Ta=25℃ or higher 3.0mW to be reduced per 1℃.
S torage Temperature Tstg －65 to +125 ℃
Operating Temperature Topr －40 to +85 ℃
Terminal Voltage ‐ -0.3 to Vcc+0.3 V
●Memory cell characteristics (Ta=25°C , Vcc=1.7V to 5.5V)
Limits
Parameter Min. Typ. Max. Unit
Number of data rewrite times *1 1,000,000 - - Times
Data hold years *1 40 - - Years
*1 Not 100% TESTED
●Recommended Operating Ratings
Parameter Symbol Ratings Unit
Power source voltage Vcc 1.7 to 5.5
Input voltage VIN 0 to Vcc V
●Input / output capacity (Ta=25°C, frequency=5MHz)
Parameter Symbol Min. Max. Unit Conditions
Input capacity *1 CIN － 8 VIN=GND
Output capacity *1 COUT － 8
pF VOUT=GND
*1 Not 100% TESTED.
●Electrical characteristics (Unless otherwise specified, Ta=- 40°C to + 85°C, Vcc=1.7V to 5.5V)
Limits
Parameter Symbol
Min. Typ. Max.
Unit Conditions
“H” Input Voltage1 VIH1 0.7xVcc － Vcc+0.3 V 1.7≦Vcc≦5.5V
“L” Input Voltage1 VIL1 -0.3 － 0.3xVcc V 1.7≦Vcc≦5.5V
“L” Output Voltage1 VOL1 0 － 0.4 V IOL=2.1mA, 2.5≦Vcc<5.5V
“L” Output Voltage2 VOL2 0 － 0.2 V IOL=1.0mA, 1.7≦Vcc<2.5V
“H” Output Voltage1 VOH1 Vcc-0.2 － Vcc V IOH=-0.4mA, 2.5V≦Vcc<5.5V
“H” Output Voltage2 VOH2 Vcc-0.2 － Vcc V IOH=-100µA, 1.7≦Vcc<2.5V
Input Leakage Current ILI -1 － 1 μAV
IN=0 to Vcc
Output Leakage Current ILO -1 － 1 μAV
OUT=0 to Vcc, CSB=Vcc
0.5 *1
ICC1 － － 1 *2 mA Vcc=1.8V, fSCK=5MHz, tE/W=5ms
Byte Write, Page Write, Write Status register
1 *1
ICC2 － － 1.5 *2 mA Vcc=2.5V, fSCK=10MHz, tE/W=5ms
Byte Write, Page Write, Write Status register
2 *1
Operating Current Write
ICC3 － － 3 *2 mA Vcc=5.5V, fSCK=20MHz, tE/W=5ms
Byte Write, Page Write, Write Status register
ICC4 － － 1 mA Vcc=1.8V, fSCK=5MHz, SO=OPEN
Read, Read Status Register
ICC5 － － 1 mA Vcc=2.5V, fSCK=2MHz, SO=OPEN
Read, Read Status Register
ICC6 － － 1.5 mA Vcc=2.5V, fSCK=5MHz, SO=OPEN
Read, Read Status Register
ICC7 － － 2 mA Vcc=2.5V, fSCK=10MHz, SO=OPEN
Read, Read Status Register
ICC8 － － 2 mA Vcc=5.5V, fSCK=5MHz, SO=OPEN
Read, Read Status Register
ICC9 － － 4 mA Vcc=5.5V, fSCK=10MHz, SO=OPEN
Read, Read Status Register
Operating Current Read
ICC10 － － 8 mA Vcc=5.5V, fSCK=20MHz, SO=OPEN
Read, Read Status Register
Standby Current ISB － － 2 μAVcc=5.5V, SO=OPEN
CSB=HOLDB=WP=Vcc, SCK=SI=Vcc or GND
*1 BR25S320/640-W
*2 BR25S128/256-W
Datasheet
3/31
BR25Sxxx-W Series (32K 64K 128K 256K)
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
www.rohm.com
●Operating timing characte ristics (Ta=-40°C to +85°C, unless otherwise specified, load capacity CL=30pF)
1.7≦Vcc<2.5V 1.8≦Vcc<2.5V 2.5≦Vcc<4.5V 4.5≦Vcc<5.5V
Parameter Symbol Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Unit
SCK frequency fSCK - - 3 - - 5 - - 10 - - 20 MHz
SCK high time tSCKWH 125 - - 80 - - 40 - - 20 - - ns
SCK low time tSCKWL 125 - - 80 - - 40 - - 20 - - ns
CSB high time tCS 250 - - 90 - - 40 - - 20 - - ns
CSB setup time tCSS 100 - - 60 - - 30 - - 15 - - ns
CSB hold time tCSH 100 - - 60 - - 30 - - 15 - - ns
SCK setup time tSCKS 100 - - 50 - - 20 - - 15 - - ns
SCK hold time tSCKH 100 - - 50 - - 20 - - 15 - - ns
SI setup time tDIS 30 - - 20 - - 10 - - 5 - - ns
SI hold time tDIH 50 - - 20 - - 10 - - 5 - - ns
Data output delay time tPD - - 125 - - 80 - - 40 - - 20 ns
Output hold time tOH 0 - - 0 - - 0 - - 0 - - ns
Output disable time tOZ - - 200 - - 80 - - 40 - - 20 ns
HOLDB setting setup time tHFS 100 - - 0 - - 0 - - 0 - - ns
HOLDB setting hold time tHFH 100 - - 20 - - 10 - - 5 - - ns
HOLDB release setup time tHRS 100 - - 0 - - 0 - - 0 - - ns
HOLDB release hold time tHRH 100 - - 20 - - 10 - - 5 - - ns
Time from HOLDB to output High-Z tHOZ - - 100 - - 80 - - 40 - - 20 ns
Time from HOLDB to output change tHPD - - 100 - - 80 - - 40 - - 20 ns
SCK rise time *1 tRC - - 1 - - 1 - - 1 - - 1 μs
SCK fall time *1 tFC - - 1 - - 1 - - 1 - - 1 μs
OUTPUT rise time *1 tRO - - 100 - - 50 - - 40 - - 20 ns
OUTPUT fall time *1 tFO - - 100 - - 50 - - 40 - - 20 ns
Write ti me tE/W - - 5 - - 5 - - 5 - - 5 ms
*1 NOT 100% TESTED
●AC timing characteristics conditions Limits
Parameter Symbol
Min. Typ. Max. Unit
Load capacity CL - - 30 pF
Input rise time - - - 50 ns
Input fall time - - - 50 ns
Input voltage - 0.2Vcc/0.8Vcc V
Input / Output judgment voltage - 0.3Vcc/0.7Vcc V
●Sync data input / output timing
Figure 1. Input timing
CSB
SCK
SI
SO
tCS tCSS
tSCKS tSCKWL tSCKWH
tDIS tDIH
tRC tFC
High-Z
SI is taken into IC inside in sync with data rise edge of
SCK. Input address and data from the most significant bit
MSB
Figure 2. Input / Output timing
CSB
SCK
SI
SO
tPD tOH tRO,tFO tOZ
tCSH tSCKH
tCS
Hi
g
h-Z
Figure 3. HOLD timing
CSB
SCK
SI n+1
"H"
"L"
n
Dn
n-1
Dn Dn-1
HOLDB
SO Dn+1
tHFS tHFH
tHOZ
tHRS tHRH
tDIS
tHPD
High-Z
SO is output in sync with data fall edge of SCK. Data is
output from the most significant bit MSB.
Datasheet
4/31
BR25Sxxx-W Series (32K 64K 128K 256K)
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
www.rohm.com
●Block Diagram
●Pin Configuration
●Pin Descriptions
Terminal
name Input
/Output Function
Vcc - Power source to be connected
GND - All inp ut / output reference vo ltage, 0V
CSB Input Chip select input
SCK Input Serial clock input
SI Input Start bit, ope code, address, and serial data input
SO Output Serial data output
HOLDB Input Hold inp ut
Command communications may be suspended
temporarily (HOLD status)
Input Write protect input
Write command is prohibited
Write status register command is prohibited
*1 12bit: BR25S320-W
13bit: BR25S640-W
14bit: BR25S128-W
15bit: BR25S256-W
CSB
GND
INSTRUCTION DECODE
CONTROL CLOCK
GENERATION
VOLTAGE
DETECTION
WRITE
INHIBITION
HIGH VOLTAGE
GENERATOR
INSTRUCTION
REGISTER
32to 256K
EEPROM
ADDRESS
REGISTER
DATA
REGISTER
ADDRESS
DECODER
READ/WRITE
AMP
8bit
STATUS
REGISTER
1
2
SO
3
WP
4
8
Vcc
7
HOLDB
6
SCK
5
SI
12to 15bit
*1
8bit
12to 15bit *1
(TOP VIEW)
Vcc HOLDB
SCK SI
CSB SO WP GND
BR25S320-W
BR25S640-W
BR25S128-W
BR25S256-W
WP
Datasheet
5/31
BR25Sxxx-W Series (32K 64K 128K 256K)
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
www.rohm.com
Figure 6. "L" Output Vol
t
age VOL1(Vcc=2.5V)
Figure 7. "H" Output Voltage VOH1
(Vcc=2.5V)
Figure 4. "H" Input Voltage VIH
(CSB,SCK,SI,HOLDB,WP)
Figure 5. "L" Input Voltage VIL
(CSB,SCK,SI,HOLDB,WP)
●Typical Performance Cur ves
(The following characteristic data are Typ. Values.)
Datasheet
6/31
BR25Sxxx-W Series (32K 64K 128K 256K)
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
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TSZ22111･15･001
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Figure 8. Input Leak Current ILI
(CSB,SCK,SI,HOLDB,WP)
Figure 9. Output Leak Current ILO (SO)
Figure 11. Current consumption at WRITE operation ICC3
(BR25S128/256-W)
Figure 10. Current consumptio n at WRITE operation ICC3
(BR25S320/640-W)
●Typical Performance Curves‐Continued
Datasheet
7/31
BR25Sxxx-W Series (32K 64K 128K 256K)
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
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Figure 12. Current consumption at READ operation ICC10
Figure 14. SCK frequency fSCK
Figure 15. SCK high time tSCKWH
Figure 13. Current consumption at standby operation ISB
●Typical Performance Curves‐Continued
Datasheet
8/31
BR25Sxxx-W Series (32K 64K 128K 256K)
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
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Figure 16. SCK low time tSCKWL
Figure 17. CSB high time tCS
Figure 18. CSB setup time tCSS Figure 19. CSB hold time tCSH
●Typical Performance Curves‐Continued
Datasheet
9/31
BR25Sxxx-W Series (32K 64K 128K 256K)
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
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Figure 20. SI setup time tDIS
Figure 21. SI hold time tDIH
Figure 22. Data output delay time tPD
Figure 23. Output disable time tOZ
●Typical Performance Curves‐Continued
Datasheet
10/31
BR25Sxxx-W Series (32K 64K 128K 256K)
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
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Figure 24. HOLDB setting hold time tHFH
Figure 25. HOLDB release hold time tHRH
Figure 26. Time from HOLDB to output High-Z tHOZ
Figure 27. Time from HOLDB to output change tHPD
●Typical Performance Curves‐Continued
Datasheet
11/31
BR25Sxxx-W Series (32K 64K 128K 256K)
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
www.rohm.com
Figure 30. W
r
ite cycle time tE/W
Figure 28. Output rise time tRO
Figure 29. Output fall time tFO
●Typical Performance Curves‐Continued
Datasheet
12/31
BR25Sxxx-W Series (32K 64K 128K 256K)
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
www.rohm.com
●Features
○Status registers
This IC has status register. The status register expresses the following parameters of 8 bits.
BP0 and BP1 can be set by write status register command. These 2 bits are memorized into the EEPROM, therefore are
valid even when power source is turned off.
Rewrite characteristics and data hold time are same as cha r acteristics of the EEPROM.
WEN can be set by write enable command and write disable command. WEN becomes write disable status when power
source is turned off. R/B is for write confirmation, therefore cannot be set externally.
The value of status register can be read by read status register command.
1. Contexture of status register
Product number bit 7 bit 6 bit 5 bit 4 bit 3 bit 2 bit 1 bit 0
BR25S320-W
BR25S640-W
BR25S128-W
BR25S256-W
WPEN 0 0 0 BP1 BP0 WEN R
―/B
bit Memory
location Function
WPEN EEPROM
WP pin enable / disable designation bit
WPEN=0=invalid
WPEN=1=valid
BP1
BP0 EEPROM EEPROM write disable block designation bit
WEN registers Write and write status register write enable / disable status confirmation bit
WEN=0=prohibited
WEN=1=permitted
R
―/B registers Write cycle status (READY / BUSY) status confirmation bit
R
―/B=0=READY
R
―/B=1=BUSY
2. Write disable block setting Write disable block
BP1 BP0
BR25S320-W BR25S640-W BR25S128-W BR25S256-W
0 0 None None None None
0 1 C00h-FFFh 1800h-1FFFh 3000h-3FFFh 6000h-7FFFh
1 0 800h-FFFh 1000h-1FFFh 2000h-3FFFh 4000h-7FFFh
1 1 000h-FFFh 0000h-1FFFh 0000h-3FFFh 0000h-7FFFh
○WP pin
By setting WP=LOW, write command is prohibited. And th e write command to be disabled at this moment is WRSR.
However, when write cycle is in execution, no interruption can be made.
Product number WRSR WRITE
BR25S320-W
BR25S640-W
BR25S128-W
BR25S256-W
Prohibition possible
but WPEN bit “1” Prohibition
impossible
○HOLDB pin
By HOLDB pin, data transfer can be interrupted. When SCK=”0”, by making HOLDB from “1” into”0”, data transfer to
EEPROM is interrupted. When SCK = “0”, by making HOLDB from “0” into “1”, data transfer is restarted.
Datasheet
13/31
BR25Sxxx-W Series (32K 64K 128K 256K)
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
www.rohm.com
●Command mode
Command Contents Ope code
WREN Write enable c ommand 0000 0110
WRDI Write disable command 0000 0100
READ Read command 0000 0011
WRITE Write command 0000 0010
RDSR Read status register command 0000 0101
WRSR Write status register command 0000 0001
●Timing chart
1. Write enable (WREN) / disable (WRDI) command
This IC has write enable statu s and write dis able status. It is set to write enable status by write enable c ommand, and it is
set to write disable status by write disable command. As for these commands, set CSB LOW, and then input the
respective ope codes. The respective commands are accepted at the 7-th clock rise. Even with input over 7 clocks,
command becomes valid.
When to carry out write command, it is necessary to set write enable status by the write enable command. If write
command is input in the write disable status, the command is cancelled. And even in the wr ite enable status, once write
command is executed, it gets in the write disable status. After power on, this IC is in write disable status.
2. Read command (READ) Product
number Address
length
BR25S320-W A11-A0
BR25S640-W A12-A0
BR25S128-W A13-A0
BR25S256-W A14-A0
By read command, data of EEPROM can be read. As for this command, set CSB LOW, then input addr ess after read ope
code. EEPROM starts data output of the designated address. Data output is started from SCK fall of 23-th clock, and
from D7 to D0 sequentially. This IC has increment read function. After output of data for 1 byte (8bits), by continuing input
of SCK, data of the next address can be re ad. Increment r ea d can r ead al l t he address es of EEPROM. After reading data
of the most significant address, by continuing increment read, data of the most insignificant address is read.
WREN (WRITE ENABLE): Write enable
Figure 31. Write enable command
High-Z
603 712 45
CSB
SCK
SO
SI
00000110
Figure 32. Write disable command
WRDI (WRITE DISABLE): Write disable
High-Z
0000
SI
0100
0312 4 7
CSB
SCK
5 6
SO
High-Z
11
1 1 0
0 3 7 1 2
D6
SO
CSB
SCK
SI
4 5
A12
6 8
* A0A1
D7
23 3024
D0
0 0 0 0 0
D2 D1
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
～
9 10
A13 A14
30 31
Figure 33. Read command
Datasheet
14/31
BR25Sxxx-W Series (32K 64K 128K 256K)
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
www.rohm.com
3. Write command (WRITE)
By write command, data of EEPROM can be written. As for this command, set CSB LOW, then input address and data
after write ope code. Then, by making CSB HIGH, the EEPROM starts writing. The write time of EEPROM requires time
of tE/W (Max 5ms). During tE/W, other than read status register command is not accepted. Set CSB HIGH between
taking the last data (D0) and rising the next SCK clock. At the other timing , write command is not e xecuted, and this write
command is cancelled. This IC has page write function, and after input of data for 1 byte (8 bits), by continuing data input
without setting CSB HIGH, 2byte or more data can be written for one tE/W. The maximum number of write bytes is
specified per device of each capacity. Up to 64 arbitrary bytes can be written (in the case of BR25S128/256-W). In page
write, the insignificant 5 bit of the designat ed address is incremented internall y at every time when data of 1 byte is input
and data is written to respective addresses. When data of the maximum bytes or higher is input, addres s rolls over, and
previously input data is overwritten.
4. Write status register, Read status register command (WRSR/RDSR)
Write status register comman d can write data of status register. The data can be written by this command are 3 bits, that
is, WPEN(bit7), BP1 (bit3) and BP0 (bit2) among 8 bits of status register. By BP1 and BP0, write disable block of
EEPROM can be set. As for this command, set CSB LOW, and input ope code of write status register, and input data.
Then, by making CSB HIGH, EEPROM starts writing. Write time requires time of tE/W as same as writ e. As for CSB rise,
set CSB HIGH between taking the last data bit (bit0) and the next SCK clock rising. At the other timing, command is
cancelled. Write disable block is determined by BP1 BP0, and the block can be selected from 1/4 , 1/2, and entire of
memory array (Refer to the write disable block setting table.). To the write disabled block, writ e cannot be made, and on ly
read can be made.
Product
number Address
length
BR25S320-W A11-A0
BR25S640-W A12-A0
BR25S128-W A13-A0
BR25S256-W A14-A0
High-Z
＊=Don't Care
31
D0
0 0 0 0 0 D2 D1D7
23 3024
D6
0 A0A1
*
1
1 2 4
0
CSB
SCK
SI
SO
0 3 7 8 5 6
A12
～
～
～
～
～
～
～
～
～
～
11
～
～
～
～
～
～
～
～
9 10
A13 A14
Figure 34. Write command
CSB
SCK
High-Z *=Don't care
0 0 0 0 1 WPEN
0
1 2 4
0
SI
SO
0 3 7 8 5 6
*
9 10 11 12 13 14 15
* *BP1 BP0 * *
bit7 bit6 bit5 bit4 bit3 bit2 bit1 bit0
0
Figure 35. Write status register
Figure 36. Read status register command
High-Z bit7 bit6 bit5 bit4
00 0
bit3 bit2 bit1 bit0
13
CSB
SCK
SI 1 1
106
0
SO
141 2
WEN R/B
11 153 7 9
0
5 12
0 0 0 0 0
4 8
WPEN BP1 BP0
Datasheet
15/31
BR25Sxxx-W Series (32K 64K 128K 256K)
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
www.rohm.com
●WP cancel valid area
WP is normally fixed to “H” or “L” for use, but when WP is controlled so as to cancel write status register command, pay
attention to the following WP valid timing.
While write status register command is executed, by setting WP = “L” in cancel valid area, command can be cancelled. The
area from command ope code to CSB rise at internal automatic write start becomes the cancel valid area. However, once
write is started, by any input write cycle cannot be cancelled. WP input becomes Don’t Care, and cancellation becomes
invalid.
●HOLDB pin
By HOLDB pin, command communication can be stopped temporarily (HOLD status). The command communications are
carried out when the HOLDB pin is HIGH. To get in HOLD status, at command communication, when SCK=LOW, set the
HOLDB pin LOW. At HOLD status, SCK and SI become Don’t Care, and SO becomes high imped ance (High-Z). To release
the HOLD status, set the HOLDB pin HIGH when SCK=LOW. After that, communication can be restarted from the point
before the HOLD status. For example, when HOLD status is made after A5 address input at read, after release of HOLD
status, by starting A4 address input, read can be restarted. When in HOLD status, keep CSB LOW. When it is set
CSB=HIGH in HOLD status, the IC is reset, therefore communication after that cannot be restarted.
Figure 37. WP valid timing (At inputting WRSR command)
6 7
Ope Co de Data tE/W
Data writ e tim e
SCK 15 16
Valid
(WRSR command is reset by WPB=L) Invalid
Datasheet
16/31
BR25Sxxx-W Series (32K 64K 128K 256K)
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
www.rohm.com
●Method to cancel each command
○READ, RDSR
・Method to cancel : cancel by CSB = “H”.
○WRITE、PAGE WRITE
a：Ope code or address input area
Cancellation is availa ble by CSB=”H”.
b：Data input area (D7 to D1 input area)
Cancellation is availa ble by CSB=”H”.
c：Data input area (D0 area)
In this area, cancellation is not available.
When CSB is set HIGH, write starts.
d：tE/W area
In the area c, by rising CSB, write starts.
While writing, by any input, cancellation cannot be made.
Note1) If Vcc is made OFF during write execution, designated address data is not guaranteed, therefore write it once again.
Note2) If CSB is rised at the same timing as that of the SCK rise, write execution / cancel becomes unstable, therefore, it is
recommended to rise in SCK = “L” area. As for SCK rise, assure timing of tCSS / tCSH or more.
○WRSR
a：From ope code to 15-th clock rise
Cancellation is availa ble by CSB=”H”.
b：From 15-th clock rise to 16-th clock rise (write enable area)
In this area, cancellation is not available.
When CSB is set HIGH, write starts.
c：After 16-th clock rise.
Cancellation is availa ble by CSB=”H”.
However, if write starts (CSB is rised)
in the area b, cancellation cannot be made by any means.
And, by inputting on SCK clock, canc ellation cannot be made.
Note1) If Vcc is made OFF during write execution, designated address data is not guaranteed, therefore write it once
again
Note2) If CSB is rised at the same timing as that of the SCK rise, write execution / cancel becomes unstable, therefore, it
is recommended to rise in SCK = “L” area. As for SCK rise, assure timing of tCSS / tCSH or more.
○WREN/WRDI
a：From ope code to 7-th clock rise, cancellation is available by CSB = “H”.
b：Cancellation is not available 7-th clock.
Figure 38. READ cancel valid timing Figure 39. RDSR cancel valid timing
Figure 42. WREN/WRDI cancel valid timing
Ope code Address
a
Data tE/W
b d
c
8bits 8bits
16bits
D7
b
D6 D5 D4 D3 D2 D1 D0
SCK
SI
c
Figure 41. WRSR cancel valid timing
Ope code Address
Cancel available in all areas of read mode
Data
8 bits 8 bits
16 bits
Ope code
Cancel available in all
areas of rdsr mode
Data
8 bits 8 bits
Ope code Data tE/W
8 bits
14 15 16 17
D1 D0
a b c
8 bits
a
b
c
SCK
SI
Ope code
8 bits
6 7 8
a b
SCK
Figure 40. WRITE cancel valid timing
Datasheet
17/31
BR25Sxxx-W Series (32K 64K 128K 256K)
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
www.rohm.com
●I/O peripheral circuits
In order to realize stable high speed operations, pay attention to the following input / output pin conditions.
○Input pin pull up, pull down resistance
When to attach pull up, pull down resistance to EEPROM input pin, select an appropriate value for the microcontroller
VOL, IOL with considering VIL characteristics of this IC.
1. Pull up resistance
And, in order to prevent malfunction or erroneous write at power ON/OFF, be sure to make CSB pull up.
2.Pull down resistance
Further, by amplitude VIHE, VILE of signal input to EEPROM, operation speed changes. By inputting Vcc/GND level
amplitude of signal, more stable high speed operations can be realized. On the contrary, when amplitude of 0.8VCC /
0.2Vcc is input, operation speed becomes sl ow.*1
In order to realize more stable high speed operation, it is recommended to make the values of RPU, RPD as large as
possible, and make the amplitude of signal input to EEPROM close to the amplitude of VCC / GND level.
(*1 In this case, guaranteed value of operating timing is guaranteed.)
○SO load capacity condition
Load capacity of SO output pin affects upon delay characterist ic of SO output (Data output delay time, time from HOLD B
to High-Z, Output rise time, Output fall time.). In order to make output delay characteristic into better, make SO load
capacity small.
○Other cautions
Make the each wire length from the microcontroller to EEPROM input pin same length, in order to prevent setup / hold
violation to EEPROM, owing to difference of wire length of each input.
EEPROM
SO
CL
Figure 45. SO load capacity
Figure 43. Pull up resistance
Figure 44. Pull down resistance
RPD≧ VOHM
IOHM ･･･③
VOHM≧ VIHE ･･･④
Example) When VCC=5V, VOHM=VCC-0.5V, IOHM＝0.4mA,
V
IHE=VCC×0.7V, from the equation③,
RPD≧ 5－0.5
0.4×10-
3
∴RPD≧ 11.3[kΩ]
RPU≧ VCC－VOLM
IOLM ･･･①
VOLM≦ VILE ･･･②
RPU≧ 5－0.4
2×10-
3
∴RPU≧ 2.3[kΩ]
With the value of Rpu to satisfy the above equation, VOLM
becomes 0.4V or lower, and with VILE (=1.5V), the equation ②is
also satisfied.
・VILE :EEPROM VIL specifications
・VOLM :Microcontroller VOL specifications
・IOLM :Microcontroller IOL specifications
Example) When Vcc=5V, VILE=1.5V, VOLM=0.4V, IOLM=2mA,
from the equation ①,
IOLM
VILE VOLM
“L” output “L” input
Microcontroller EEPROM
RPU
IOHM
VIHE VOHM
Microcontroller EEPROM
“H” output “H” input
RPD
Datasheet
18/31
BR25Sxxx-W Series (32K 64K 128K 256K)
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
www.rohm.com
●Equivalent circuit
○Output circuit
○Input circuit
WP internal
signal
Figure 50. HOLDB input equivalent circ uit Figure 51. WP input equivalent circuit
Figure 46. SO output equivalent circuit
Figure 47. CSB input equivalent circuit
Figure 48. SCK input equivalent circuit Figure 49. SI input equivalent circuit
SO
internal
signal
internal
signal
CSB internal
signal
internal
signal
SCK internal
signal
HOLDB internal
signal
SI internal
signal
Datasheet
19/31
BR25Sxxx-W Series (32K 64K 128K 256K)
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
www.rohm.com
●Notes on power ON/OFF
○At standby
Set CSB “H”, and be sure to set SCK, SI input “L” or “H”. Do not input intermediate electric potantial.
○At power ON/OFF
When Vcc rise or fall, set CSB=”H” (=Vcc).
When CSB is “L”, this IC gets in input acc ept status (active). If power is turned on in this status, nois es and the likes may
cause malfunction, erroneous write or so. To prevent these, at power ON, set CSB “H”. (When CSB is in “H” status, all
inputs are canceled.)
(Good example) CSB terminal is pulled up to Vcc.
At power OFF, take 10ms or more before supply. If power is turned on without observing this condition, the IC
internal circuit may not be reset.
(Bad example) CSB terminal is “L” at power ON/OFF.
In this case, CSB always becomes “L” (active status), and EEPROM may have malfunction or erroneous write owing
to noises and the likes.
Even when CSB input is High-Z , the status becomes like this case.
○Operating timing after power ON
As shown in Figure 53, at standby, when SCK is “H”, even i f CSB is fallen, SI status is not read at fall edge. SI status is
read at SCK rise edge after fall of CSB. At standby and at power ON/OFF, set CSB “H” status.
○At power on malfunction preventing functi on
This IC has a POR (Power On Reset) circuit as mistake write countermeasure. After POR action, it gets in write disab le
status. The POR circuit is valid only when power is ON, and does not work when power is OF F. When power is ON, if the
recommended conditions of the following tR, tOFF, and Vbot are not satisfied, it may become write enable status owing to
noises and the likes.
Recommended conditions of tR, tOFF, Vbot
tR tOFF Vbot
10ms or below 10ms or higher 0.3V or below
100ms or below 10ms or higher 0.2V or bel ow
○Low voltage malfunction preventing function
LVCC (Vcc-Lockout) circuit prevents data rewrite action at low power, and prevents wrong write.
At LVCC voltage (Typ. =1.2V) or below, it prevent data rewrite.
tR
tOFF Vbot
0
Vcc
Figure 52. CSB timing at power ON/OFF
CSB
Vcc
Bad example Good example
Figure 54. Rise waveform
Figure 53. Operating timing
0 1 2
Command start here. SI is read.
Even if CSB is fallen at SCK=”H”,
SI status is not read at that edge.
CSB
SCK
SI
Datasheet
20/31
BR25Sxxx-W Series (32K 64K 128K 256K)
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
www.rohm.com
●Noise countermeasures
○Vcc noise (bypass capacitor)
When noise or surge gets in the power source line, malfunction may occur, therefore, for removing these, it is
recommended to attach a bypass capacitor (0.1μF) between IC Vcc and GND. At that time, attach it as close to IC as
possible.
And, it is also recommended to attach a bypass capacitor between board Vcc and GND.
○SCK noise
When the rise time of SCK (tRC) is long, and a certain degree or more of noise exists, malfunction may occur owing to
clock bit displacement. To avoid this, a Schmitt trigger circuit is built in SCK input. The hysteresis width of this circuit is set
about 0.2V, if noises exist at SCK input, set the noise amplitude 0.2Vp-p or belo w. And it is recommended to set the rise
time of SCK (tRC) 100ns or below. In the case when the rise time is 100ns or higher, take sufficient noise
countermeasures. Make the clock rise, fall time as small as possible.
○WP noise
During execution of write status register command, if ther e exist noises on WP pin, mistake in recognition m ay occur and
forcible cancellation may res ult. To avoid this, a Schmitt trigger circuit is built in WP input. In the same manner, a Schmitt
trigger circuit is built in CSB input, SI input and HOLDB input too.
●Notes for use
(1) Described numeric values and data are design representative values, and the values a r e not guaranteed.
(2) We believe that application circuit examples are recommendabl e, however, in actual use, confirm characteristics further
sufficiently. In the case of use by changing the fixed number of external parts, make your decision with sufficient margin in
consideration of static characteristics and transition characteristics an d fluctuations of external parts and our LSI.
(3) Absolute maximum ratings
If the absolute maximum ratings such as impressed voltage and operati ng temperat ure range and so forth are e xceeded,
LSI may be destructed. Do not impress vo ltage and temper atur e exceeding the absolute maximum ratings. In the cas e of
fear exceeding the absolute maximum ratings, take physical safety countermeasures such as fuses, and see to it that
conditions exceeding the absolute maximum ratings should not be impressed to LSI.
(4) GND electric potential
Set the voltage of GND terminal lowest at any action condit ion. Make sure that each terminal voltage is higher than t hat
of GND terminal.
(5) Heat design
In consideration of permissible dissipation in actual use condition, carr y out heat design with sufficient margin.
(6) Terminal to terminal short circuit and wrong packaging
When to package LSI onto a board, pay sufficient attention to LSI direction and displacement. Wrong packaging may
destruct LSI. And in the case of short circuit between LSI terminals and terminals and power source, terminal and GND
owing to foreign matter, LSI may be destructed.
(7) Use in a strong electromagnetic field may cause malfunction, therefore, evaluate design sufficiently.
Status of this document
The Japanese version of this docum ent is formal specification. A customer may use this translation v ersion only for a reference
to help reading the formal version.
If there are any differences in translation version of this document formal version takes priority.
Datasheet
21/31
BR25Sxxx-W Series (32K 64K 128K 256K)
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
www.rohm.com
●Ordering Information
Product Code Description
B R 2 5 S x x x x x x - W x x
BUS type
25：SPI
Operating temperature
-40℃ to+85℃
Capacity
32=32K 256=256K
64=64K
128=128K
Package
F :SOP8
FJ :SOP-J8
FV : SSOP-B8
FVT : TSSOP-B8
FVJ : TSSOP-B8J
FVM : MSOP8
NUX : VSON008X2030
Double Cell
Packaging and formin g sp ecificatio n
E2 : Embossed tape and reel (SOP8,SOP-J8, SSOP-B8,TSSOP-B8, TSSOP-B8J)
TR : Embossed tape and reel (MSOP8, VSON008X2030)
●Lineup Package
Capacity Type Quantity
SOP8
SOP-J8
SSOP-B8 Reel of 2500
TSSOP-B8 Reel of 3000
TSSOP-B8J Reel of 2500
MSOP8 Reel of 3000
32K
VSON008X2030 Reel of 4000
SOP8
SOP-J8
SSOP-B8 Reel of 2500
TSSOP-B8 Reel of 3000
TSSOP-B8J Reel of 2500
64K
MSOP8 Reel of 3000
SOP8
SOP-J8
SSOP-B8 Reel of 2500
128K
TSSOP-B8 Reel of 3000
SOP8
256K SOP-J8 Reel of 2500
Datasheet
22/31
BR25Sxxx-W Series (32K 64K 128K 256K)
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
www.rohm.com
●Physical Dimension Tape and Reel Information
SOP8
∗ Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction
of feed
The direction is the 1pin of product is at the upper left when you hold
reel on the left hand and you pull out the tape on the right hand
2500pcs
E2
()
Direction of feed
Reel 1pin
Datasheet
23/31
BR25Sxxx-W Series (32K 64K 128K 256K)
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
www.rohm.com
●Physical Dimension Tape and Reel Information - continued
SOP-J8
∗ Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction
of feed
The direction is the 1pin of product is at the upper left when you hold
reel on the left hand and you pull out the tape on the right hand
2500pcs
E2
()
Direction of feed
Reel 1pin
Datasheet
24/31
BR25Sxxx-W Series (32K 64K 128K 256K)
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
www.rohm.com
●Physical Dimension Tape and Reel Information - continued
∗
Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction
of feed The direction is the 1pin of product is at the upper left when you hold
reel on the left hand and you pull out the tape on the right hand
2500pcs
E2
()
Direction of feed
Reel 1pin
(Unit : mm)
SSOP-B8
0.08
M
0.3MIN
0.65
(0.52)
3.0±0.2
0.15±0.1
(MAX 3.35 include BURR)
S
S
0.1
1234
5678
0.22
6.4±0.3
4.4±0.2
+0.06
−0.04
0.1
1.15±0.1
SSOP-B8
Datasheet
25/31
BR25Sxxx-W Series (32K 64K 128K 256K)
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
www.rohm.com
●Physical Dimension Tape and Reel Information - continued
TSSOP-B8
Direction of feed
Reel
∗
Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction
of feed
The direction is the 1pin of product is at the upper left when you hold
reel on the left hand and you pull out the tape on the right hand
3000pcs
E2
()
1pin
Datasheet
26/31
BR25Sxxx-W Series (32K 64K 128K 256K)
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
www.rohm.com
●Physical Dimension Tape and Reel Information - continued
TSSOP-B8J
Direction of feed
Reel ∗
Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction
of feed The direction is the 1pin of product is at the upper left when you hold
reel on the left hand and you pull out the tape on the right hand
2500pcs
E2
()
1pin
Datasheet
27/31
BR25Sxxx-W Series (32K 64K 128K 256K)
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
www.rohm.com
●Physical Dimension Tape and Reel Information - continued
MSOP8
Direction of feed
Reel ∗ Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction
of feed The direction is the 1pin of product is at the upper right when you hold
reel on the left hand and you pull out the tape on the right hand
3000pcs
TR
()
1pin
Datasheet
28/31
BR25Sxxx-W Series (32K 64K 128K 256K)
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
www.rohm.com
●Physical Dimension Tape and Reel Information - continued
VSON008X2030
∗ Order quantity needs to be multiple of the minimum quantity.
<Tape and Reel information>
Embossed carrier tapeTape
Quantity
Direction
of feed The direction is the 1pin of product is at the upper right when you hold
reel on the left hand and you pull out the tape on the right hand
4000pcs
TR
()
Direction of feed
Reel 1pin
Datasheet
29/31
BR25Sxxx-W Series (32K 64K 128K 256K)
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
www.rohm.com
●Marking Diagrams
MSOP8(TOP VIEW)
Part Number Marking
LOT Number
1PIN MARK
Part Number Marking
SOP8(TOP VIEW)
LOT Number
1PIN MARK
SOP-J8(TOP VIEW)
Part Number Marking
LOT Number
1PIN MARK
TSSOP-B8J(TOP VIEW)
Part Number Marking
LOT Number
1PIN MARK
VSON008X2030 (TOP VIEW)
Part Number Marking
LOT Number
1PIN MARK
TSSOP-B8(TOP VIEW)
Part Number Marking
LOT Number
1PIN MARK
SSOP-B8(TOP VIEW) Part Number Marking
LOT Number
1PIN MARK
Datasheet
30/31
BR25Sxxx-W Series (32K 64K 128K 256K)
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
www.rohm.com
●Marking Information
Capacity Product Name
Marking Package Type
S320 SOP8
S320 SOP-J8
S320 SSOP-B8
S320 TSSOP-B8
S320 TSSOP-B8J
S320 MSOP8
32K
S320 VSON008X2030
S640 SOP8
S640 SOP-J8
S640 SSOP-B8
S640 TSSOP-B8
S640 TSSOP-B8J
64K
S640 MSOP8
5S128 SOP8
5S128 SOP-J8
S128 SSOP-B8
128K
5S128 TSSOP-B8
5S256 SOP8
256K 5S256 SOP-J8
Datasheet
31/31
BR25Sxxx-W Series (32K 64K 128K 256K)
TSZ02201-0R2R0G100330-1-2
21.AUG.2012 Rev.001
©2012 ROHM Co., Ltd. All rights reserved.
TSZ22111･15･001
www.rohm.com
●Revision History
Date Revision Changes
21.Aug.2012 001 New Release
Datasheet
Datasheet
Notice - GE Rev.002
© 2014 ROHM Co., Ltd. All rights reserved.
Notice
Precaution on using ROHM Products
1. Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
intend to use our Products in devices requiring extremely high reliability (such as medical equipment (Note 1), transport
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN USA EU CHINA
CLASSⅢ CLASSⅢ CLASSⅡb CLASSⅢ
CLASSⅣ CLASSⅢ
2. ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3. Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4. The Products are not subject to radiation-proof design.
5. Please verify and confirm characteristics of the final or mounted products in using the Products.
6. In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7. De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8. Confirm that operation temperature is within the specified range described in the product specification.
9. ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1. When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2. In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Datasheet
Datasheet
Notice - GE Rev.002
© 2014 ROHM Co., Ltd. All rights reserved.
Precautions Regarding Application Examples and External Circuits
1. If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2. You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1. Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2. Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3. Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4. Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1. All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2. No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Other Precaution
1. This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2. The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3. In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4. The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
DatasheetDatasheet
Notice – WE Rev.001
© 2014 ROHM Co., Ltd. All rights reserved.
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3. The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
