MCH3206
No.7130-1/4
Applications
•Relay drivers, lamp drivers, motor drivers, strobes.
Features
•Adoption of MBIT processes.
•High current capacitance.
•Low collector-to-emitter saturation voltage.
•High speed switching.
•Ultrasmall package facilitates miniaturization in end
products (0.85mm).
•High allowable power dissipation.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7130
MCH3206
Package Dimensions
unit : mm
2194A
[MCH3206]
N3001 TS IM TA-3369
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
NPN Silicon Epitaxial Planar Transistor
DC / DC Converter Applications
1 : Base
2 : Emitter
3 : Collector
SANYO : MCPH3
0.250.25
0.07
2.1
1.6
2.0
0.65
0.85
0.15
12
3
12
3
(Bottom view)
(Top view)
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 15 V
Collector-to-Emitter Voltage VCEO 15 V
Emitter-to-Base Voltage VEBO 5V
Collector Current IC3A
Collector Current (Pulse) ICP 5A
Base Current IB600 mA
Collector Dissipation PCMounted on a ceramic board(600mm2✕0.8mm) 0.8 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Collector Cutoff Current ICBO VCB=12V, IE=0 0.1 µA
Emitter Cutoff Current IEBO VEB=4V, IC=0 0.1 µA
DC Current Gain hFE VCE=2V, IC=500mA 200 560
Gain-Bandwidth Product fTVCE=2V, IC=500mA 380 MHz
Output Capacitance Cob VCB=10V, f=1MHz 13 pF
Marking : CF Continued on next page.