FSB560/FSB560A FSB560 / FSB560A C E B TM SuperSOT -3 (SOT-23) NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter FSB560/FSB560A Units VCEO Collector-Emitter Voltage 60 V VCBO Collector-Base Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current - Continuous 2 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Max Symbol Characteristic Units FSB560/FSB560A PD Total Device Dissipation 500 mW RJA Thermal Resistance, Junction to Ambient 250 C/W 2001 Fairchild Semiconductor Corporation FSB560/FSB560A, Rev B1 (continued) Electrical Characteristics Symbol TA = 25C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO Collector-Emitter Breakdown Voltage IC = 10 mA 60 V BVCBO Collector-Base Breakdown Voltage IC = 100 A 80 V BVEBO Emitter-Base Breakdown Voltage IE = 100 A 5 V ICBO Collector Cutoff Current VCB = 30 V 100 VCB = 30 V, TA=100C 10 nA uA VEB = 4V 100 nA IEBO Emitter Cutoff Current ON CHARACTERISTICS* hFE DC Current Gain IC = 100 mA, VCE = 2 V 70 IC=500mA, VCE =2V FSB560 100 FSB560A VCE(sat) Collector-Emitter Saturation Voltage 250 IC = 1 A, VCE = 2 V 80 IC = 2 A, VCE = 2 V 40 300 550 IC = 1 A, IB = 100 mA 300 mV IC = 2 A, IB=200 mA FSB560 FSB560A 350 1.25 V 300 VBE(sat) Base-Emitter Saturation Voltage IC = 1 A, IB = 100 mA VBE(on) Base-Emitter On Voltage IC = 1 A, VCE = 2 V 1 V 30 pF SMALL SIGNAL CHARACTERISTICS Cobo Output Capacitance VCB = 10 V, IE = 0, f = 1MHz fT Transition Frequency IC = 100 mA,VCE = 5 V, f=100MHz 75 - *Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% 1998 Fairchild Semiconductor Corporation FSB560/FSB560A, Rev B1 FSB560/FSB560A NPN Low Saturation Transistor 1.4 = 10 1.2 1 - 40 C 0.8 0.6 25 C 0.4 125 C 0.2 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 VBEON- BASE-EMITTER ON VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current Base-Emitter On Voltage vs. Collector Current 1.4 Vce = 2.0V 1.2 1 - 40 C 0.8 0.6 25 C 0.4 125 C 0.2 0.0001 Collector-Emitter Saturation Voltage vs Collector Current 0.001 0.01 0.1 1 I C - COLLECTOR CURRENT (A) 10 Input/Output Capacitance vs. Reverse Bias Voltage 450 0.8 = 10 f = 1.0 MHz 0.6 125C 25C 0.4 - 40C 0.2 CAPACITANCE (pf) 400 350 C ibo 300 250 200 150 100 C obo 50 0 0.001 0.01 0.1 1 I C- COLLECTOR CURRENT (A) 10 0 0.1 0.2 0.5 1 2 5 10 20 V CE - COLLECTOR VOLTAGE (V) 50 100 Current Gain vs. Collector Current 700 Vce = 2.0V 600 H FE - CURRENT GAIN VCESAT- COLLECTOR-EMITTER VOLTAGE (V) VBESAT-BASE-EMITTER SATURATION VOLTAGE(V) Typical Characteristics 125C 500 400 25C 300 - 40C 200 100 0 0 0.5 1 1.5 2 2.5 I C - COLLECTOR CURRENT (A) 3 3.5 FSB560/FSB560A, Rev B1 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H3